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    Kyocera AVX Components 100B5R6CP500XT

    CAP CER 5.6PF 500V P90 1111
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    DigiKey 100B5R6CP500XT Reel 500
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    Avnet Americas 100B5R6CP500XT Tape w/Leader 16 Weeks 500
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    Mouser Electronics 100B5R6CP500XT
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    TTI 100B5R6CP500XT Reel 500
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    Richardson RFPD 100B5R6CP500XT 500
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    Kyocera AVX Components 100B5R6CP500XT1K

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B5R6CP500XT1K)
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    Avnet Americas 100B5R6CP500XT1K Tape w/Leader 16 Weeks 1,000
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    Mouser Electronics 100B5R6CP500XT1K
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    Kyocera AVX Components 100B5R6CP500XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Mouser Electronics 100B5R6CP500XC100
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    Richardson RFPD 100B5R6CP500XC100 5 200
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    Kyocera AVX Components 100B5R6CP500XTV1K

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Mouser Electronics 100B5R6CP500XTV1K
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    American Technical Ceramics Corp ATC100B5R6CP500XB

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, 4.4643% +TOL, 4.4643% -TOL, BG, 90+/-20PPM/CEL TC, 0.0000056UF, SURFACE MOUNT, 1111 (Also Known As: 100B5R6CP500XB)
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    Quest Components ATC100B5R6CP500XB 10
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    • 10 $2.25
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    100B5R6CP500X Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B5R6CP500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 5.6PF 500V P90 1111 Original PDF

    100B5R6CP500X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3

    nippon capacitors

    Abstract: MRF6S23140H j727
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140H nippon capacitors j727

    100B2R7CP500X

    Abstract: AN1955 MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3 100B2R7CP500X AN1955 MRF5S21100HSR3 MRF5S21100L

    AN1955

    Abstract: CDR33BX104AKWS MRF5S21100HR3 MRF5S21100HSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 AN1955 CDR33BX104AKWS MRF5S21100HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HR3 MRF5S21100HSR3

    J673

    Abstract: J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HR3 MRF6S23140HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3 J673 J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HSR3

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion


    Original     		PDF MRF6P23190H MRF6P23190HR6 MRF6P23190H NIPPON CAPACITORS

    nippon capacitors

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 0, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies


    Original     		PDF MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140H nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22

    100B102JP50X

    Abstract: 3.40 pf variable capacitor A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 100B5R6CP500X Z25 transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6P18190H MRF6P18190HR6 100B102JP50X 3.40 pf variable capacitor A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 100B5R6CP500X Z25 transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21100LR3 RF Power Field Effect Transistors MRF5S21100LSR3


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 456 mhz Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to


    Original     		PDF MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S23100HR3 A114 A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HSR3 456 mhz Nippon capacitors

    motorola 5118

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF 84RF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 motorola 5118

    100B2R7CP500X

    Abstract: MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HR3 MRF5S21100HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 100B2R7CP500X MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HSR3

    ansi-y14.5m-1994

    Abstract: 100B2R7CP500X CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 motorola 5118
    Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100L N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100L/D MRF5S21100L MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 ansi-y14.5m-1994 100B2R7CP500X CDR33BX104AKWS MRF5S21100LSR3 motorola 5118

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies


    Original     		PDF MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S23100HR3 A114 A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HSR3 Nippon capacitors

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P23190H MRF6P23190HR6 MRF6P23190H NIPPON CAPACITORS

    j686

    Abstract: FERRITE BEAD 1000 OHM 0805 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S231100H Rev. 0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies


    Original     		PDF MRF6S231100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S231100H j686 FERRITE BEAD 1000 OHM 0805 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LR3 MRF5S21100LSR3

    motorola 5118

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HR3 MRF5S21100HSR3 motorola 5118