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    TM27C512

    Abstract: No abstract text available
    Text: _ M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V


    OCR Scan     		PDF M27C512 100jiA FDIP28W PDIP28 M27C512 TM27C512

    Untitled

    Abstract: No abstract text available
    Text: M $ EPROMs ic r o c h ip EPROM Selection Guide CMOS EPROMs TEMP RANGE STANDBY CURRENT J,K,L,P,SO,TS C,l 2mA/100nA J,K,L.P,SO C,l 2mA/100nA +5V J,K,L,P,SO,TS,VS C,I,E 2mA/100jiA 90-200 +5V J,K,L,P,SO,TS,VS C,I,E 2mA/100|iA 70-150 +5V J,K,L,P,SO,TS,VS C,I,E


    OCR Scan     		PDF 2mA/100nA 2mA/100jiA 2mA/100 2mA/30 1mA/100 2mA/100tiA 27C64

    Untitled

    Abstract: No abstract text available
    Text: r= 7 M 28F101B M 28V101B S G S -T H O M S O N CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIMES - 60ns fo r M 28F101B version - 150ns for M 28V101 B version ■ LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 PROGRAM/ERASE CYCLES


    OCR Scan     		PDF 28F101B 28V101B 150ns 28V101 100jiA M28V101B 28F101B, M28F101B,

    Untitled

    Abstract: No abstract text available
    Text: P4C1256L LOW POWER 32K x 8 STATIC CMOS RAM à - FEATURES • Vcc Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100jiA/100|iA ■ Access Times —55/70 (Commercial or Industrial)


    OCR Scan     		PDF P4C1256L 70mA/85mA 100jiA/100 144-bit 32Kx8. 1256L 1256L -55PC

    Untitled

    Abstract: No abstract text available
    Text: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLYVOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 70m A at 10MHz - Stand by Cu rrent 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 1OO^s/byte (typical)


    OCR Scan     		PDF M27C4002 256Kb 10MHz 100jiA 0020h 0044h IP40W PDIP40 M27C4002 FDIP40W

    M28F102

    Abstract: PLCC44 A1006
    Text: /T 7 S G S -T H O M S O N M28F102 ^7m» ! ÆD gfâ(S!ËiLl5(@Î.rl}3(Q)lfSDÊi 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 90ns - LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF M28F102 100jiA PLCC44 TSOP40 M28F102 TSOP40 7t12I1237 A1006

    Untitled

    Abstract: No abstract text available
    Text: y M U N ITR G D E UCC5622 PRELIMINARY 27 - Line SCSI Terminator With Split Disconnect DESCRIPTION FEATURES Complies with SCSI, SCSI-2, SCSI-3 and FAST-20 Ultra Standards 2.5pF.Channel Capacitance During Disconnect 100jiA Supply Current in Disconnect Mode


    OCR Scan     		PDF UCC5622 FAST-20 100jiA UCC5622

    KM61257AL

    Abstract: No abstract text available
    Text: KM61257A/KM61257AL CMOS SRAM 2 5 6 K x 1 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 2mA (max.) : 100jiA (max.) L-Version Operating : 100 mA (max.) • Single 5 V ± 1 0 % Power Supply


    OCR Scan     		PDF KM61257A/KM61257AL 100jiA KM61257AP/ALP: 24-pin KM61257AJ/ALJ: KM61257A/AL 144-bit KM61257AL

    Untitled

    Abstract: No abstract text available
    Text: MXIC M X 28F002T/B 2 M - B I T J 2 5 6 K x 8 C M O S FLA SH M E M O R Y FEATURES 262,144x8 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100jiAmaximum standby current Programming and erasing voltage 12V ± 5%


    OCR Scan     		PDF MX28F002T/B 144x8 70/90/120ns 100jiAmaximum 16K-Byte 96K-Byte 128K-Byte 100mA QGQ117ti MX2SF002T/B

    Untitled

    Abstract: No abstract text available
    Text: BURR - BROWN XTR112 XTR114 4-20mA CURRENT TRANSMITTERS with Sensor Excitation and Linearization FEATURES APPLICATIONS • LOW UNADJUSTED ERROR INDUSTRIAL PROCESS CONTROL • PRECISION CURRENT SOURCES XTR112: Two 250|iA XTR114: Two 100jiA FACTORY AUTOMATION


    OCR Scan     		PDF XTR112 XTR114 4-20mA XTR112: XTR114: 100jiA Pt1000 30nAp-p 110dB SO-14

    Untitled

    Abstract: No abstract text available
    Text: /T T *JW, S C S -T H O M S O N Hn»[llLll gra E!IO®i M27C4001 4 Megabit (512Kx 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 55ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA at 5MHz - Standby Current 100jiA ■ PROGRAMMING VOLTAGE: 12.75V


    OCR Scan     		PDF M27C4001 512Kx 100jiA 48sec. M27C4001 TSOP32 D7flfl72

    Untitled

    Abstract: No abstract text available
    Text: P tF S IL C llB K ^ Í P lV MXIC M X28F2000P 2M-BITÍ256K x 8 CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption - 50mA maximum active current - 100jiA maximum standby current • Programming and erasing voltage 12V ± 5%


    OCR Scan     		PDF MX28F2000P 100jiA 16-KB 100mA MX28F2000PTC-90C4 MX28F2000PTC-12C4 MX28F2000PRC-90C4 MX28F2000PRC-12C4 MX28F2000PPC-90C4 150ns

    82HS641

    Abstract: 82HS641B/BJA 82HS641B GDFP2-F28 82HS641A 256 x 4 TTL PROM Memory with 3-state outputs
    Text: Philips Semiconductors Military Bipolar Memory Products Product specification 64K-bit TTL bipolar PROM 8192 x 8 82HS641A/B FEATURES • Random logic • Address access time: 82HS641A = 55ns max 82HS641B = 45ns max • Code conversion • Input loading: -100jiA max


    OCR Scan     		PDF 64K-bit 82HS641A/B 82HS641A 82HS641B -100jiA 82HS641 500ns 7110aEb 82HS641B/BJA 82HS641B GDFP2-F28 82HS641A 256 x 4 TTL PROM Memory with 3-state outputs

    AF5A

    Abstract: No abstract text available
    Text: M X23 C 40 0 0 4 M«rT[S1 8 K x 8 C M O S M A S K R O M FEATURES • • • • • • Operating current: 40m A • Standby current: 100jiA • Package type: - 32 pin plastic DIP - 32 pin plastic SOP 512K x 8 organization Single +5V power supply Fast access time: 100/120/150/200ns max)


    OCR Scan     		PDF 100/120/150/200ns 100jiA 100/120/150/200n i000QC-12 MX23C4000T MX23C4000PC-15 MX23C4000MC-15 MX23C4000QC-15 MX23C4000TC-15 32Pln AF5A

    Untitled

    Abstract: No abstract text available
    Text: A p p l ic a t io n N o t e and D ev elo pm en t S y stem A V A I L A B L E AN65 • LAPKIT DEMO i m LapKit X88C75 SLIC E2 Microperipheral Port Expander and E2 Memory FEATURES — Low Power • 60mA Active • 100jiA Standby • PDIP, PLCC, and TQFP Packaging Available


    OCR Scan     		PDF X88C75 100jiA 0G04TD1

    VQ1000

    Abstract: vq1000n6
    Text: VQ1000 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Inform ation BV dss / Order Num ber / Package b v dgs ^DS ON (max) ^D(ON) (min) 14-Pin P-DIP 14-Pin C-DIP* 60V 5.5Q 0.5A VQ1000N6 VQ1000N7 * 14 pin side brazed ceram ic DIP Advanced DMOS Technology


    OCR Scan     		PDF VQ1000 14-Pin VQ1000N6 VQ1000N7 VQ1000

    Untitled

    Abstract: No abstract text available
    Text: 64-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information Package Options Device Recommended Operating Vpp Max 80-Lead Quad Cerpak Gullwing 80-Lead Quad Plastic Gullwing 80-Lead 35mm TAB Tape Die HV34 180V HV3418DG HV3418PG


    OCR Scan     		PDF 64-Channel 80-Lead HV3418DG HV3418PG HV3418T HV3418X 12MHz V01JT41

    IC CD 3102

    Abstract: 2SC4451 cd 3102
    Text: Ordering num ber : EN3102 No.3102 r _ 2 S C 4 4 5 1 NPN Triple Diffused Planar Silicon Transistor High-Voltage Switching Applications F eatures • High breakdown voltage • Small c0b • Wide ASO • High reliability Adoption of II VP process


    OCR Scan     		PDF EN3102 2SC4451 IC CD 3102 cd 3102

    TC54512AP-15

    Abstract: No abstract text available
    Text: TOSHIBA TC54512AP-15.-20 TC54512AF-15.-20 SILICON STACKED GATE CMOS 65,536 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY Description The TC54512AP/AF is a 65,536 word x 8 bit CMOS one tim e programm able read only m em ory m olded in a 28-pin plastic


    OCR Scan     		PDF TC54512AP-15 TC54512AF-15 TC54512AP/AF 28-pin 100jiA. TC57512AD TC54512AP/ TC54512AP/AF.

    b13s7

    Abstract: No abstract text available
    Text: ISOCOfl COMPONENTS LTD 45E » • HfiflbSlQ 0Q0D23S fi « I S O T -4 1 -7 3 lf = 20mA < •r V b v ceo 2V Ij.= 1mA m O O VF o Ui Characteristics CD TRANSISTO R FAM ILY VCE|SAT| lp =100uA v CE= io v Test L -0 VCE SAT> lF = 20mA Ip= 20mA Ip= 20mA lc =40pA lc =125 iA 1c =175nA VCE=10V


    OCR Scan     		PDF 0Q0D23S 175nA 100uA 813S3 B13S5 B13S7 ISTS823A ISTS824A ISTS832S ISTS832SD b13s7

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS ICs for Communications RF/IF Double PLL Frequency Synthesizer PM B2347 Version 1.1 Preliminary Specification 27 p a g e s in cl. th is p a g e 05.99 Edition 08.98 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, BalanstraBe 73,


    OCR Scan     		PDF B2347 900MHz, 200kHz, P-TSSOP-20

    74LVT16273ADGG

    Abstract: 74LVT16273ADL LVT16273A LVT16273
    Text: Philips Semiconductors Low Voltage Products Preliminary specification 3.3V ABT 16-bit D-type flip-flop FEATURES _ 74LVT16273A • No bus current loading when output is tied to 5V bus • 16-bit D-type edge triggered flip-flops • Output capability: +64mA/-32mA '


    OCR Scan     		PDF 16-bit 74LVT16273A 64mA/-32mA 500mA 74LVT16 10MHz 500ns 7110a2t, 075flflD 74LVT16273ADGG 74LVT16273ADL LVT16273A LVT16273

    8002 1011 amplifier

    Abstract: Power AMPLIFIER 6012 AM6012F OBG analog Philips OR Mullard CRT FOR OSCILLOSCOPES AM6012 AM6012D HTL LOGIC
    Text: Product specification Philip« Semiconductors Linear Products 12-Bit multiplying D/A converter AM6012 PIN CONFIGURATION DESCRIPTION The AM6012 12-bit multiplying Digital-to-Analog converter provides high-speed and 0.025% differential nonlinearity over its full


    OCR Scan     		PDF 12-Bit AM6012 AM6012 peak-to-200 NE529 383ns 705ns 8002 1011 amplifier Power AMPLIFIER 6012 AM6012F OBG analog Philips OR Mullard CRT FOR OSCILLOSCOPES AM6012D HTL LOGIC

    2N4260

    Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Text: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000


    OCR Scan     		PDF BFT39 BFT29 BFT40 BFT30 BFT41 BFT31 BFY50 BFT53 BFY51 BFT54 2N4260 2N3829