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    100KHZ ULTRASONIC Search Results

    100KHZ ULTRASONIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TUSS4470TRTJT
    Texas Instruments Direct drive ultrasonic sensor IC with logarithmic amplifier Visit Texas Instruments Buy
    TUSS4440TRTJT
    Texas Instruments Transformer drive ultrasonic sensor IC with logarithmic amplifier Visit Texas Instruments Buy
    PGA460TPWQ1
    Texas Instruments Automotive Ultrasonic Signal Processor & Transducer Driver 16-TSSOP -40 to 105 Visit Texas Instruments Buy
    PGA460TPWRQ1
    Texas Instruments Automotive Ultrasonic Signal Processor & Transducer Driver 16-TSSOP -40 to 105 Visit Texas Instruments Buy
    PGA450TPWRQ1
    Texas Instruments Ultrasonic Sensor Signal Processor with Integrated Microcontroller (MCU) 28-TSSOP -40 to 125 Visit Texas Instruments Buy

    100KHZ ULTRASONIC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRGKI140U06

    Contextual Info: International ïsr]Rectifier PD-9.964B IRGKI140U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all ''tail"


    OCR Scan
    25KHz 100KHz IRGKI140U06 C-788 IRGKI140U06 PDF

    c796

    Abstract: c-796 IRGNI090U06
    Contextual Info: International grâlRecfffier PD9970B IRGNI090U06 "CHOPPER" 1GBT INT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail" losses


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    25KHz 100KHz IRGNI090U06 C-800 c796 c-796 IRGNI090U06 PDF

    Contextual Info: bitemational S Rectifier PD'9964B IRGKI140U06 "CHOPPER" IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail" losses


    OCR Scan
    25KHz 100KHz IRGKI140U06 C-788 PDF

    IRGNI090U06

    Abstract: C799 cx fuse c796 47110
    Contextual Info: International ^Rectifier PM970B IRGNI090U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


    OCR Scan
    25KHz 100KHz supp06 100nH C-800 IRGNI090U06 C799 cx fuse c796 47110 PDF

    9956B

    Abstract: c832 c836 diode c832 IRGTI140U06 DIODE 2FL C834 power
    Contextual Info: PD-9.956B kitemational [tor]Rectifier IRGTI140U06 "HALF-BRIDGE“ IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all ‘tail"


    OCR Scan
    25KHz 100KHz IRGTI140U06 C-836 9956B c832 c836 diode c832 IRGTI140U06 DIODE 2FL C834 power PDF

    C772

    Contextual Info: PD-9.962B htem ational [îôr IRectifier IRGKI090U06 “CHOPPER" IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


    OCR Scan
    IRGKI090U06 25KHz 100KHz C-776 C772 PDF

    79CU

    Contextual Info: International ¡1 !Rectifier PD9969B IRGNI050U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V «Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


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    25KHz 100KHz C-794 79CU PDF

    tr c828

    Abstract: tr c828 c829 C828 transistors tr c829 c829 c828 C-828 IRGTI115U06 c826
    Contextual Info: kïtemational goi Rectifier PD'99558 IRGTI115U06 "HALF-BRIDGE" IGBTINT-A-PAK Ultra-fast Speed IGBT • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


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    25KHz 100KHz IRGTI115U06 C-829 C-830 tr c828 tr c828 c829 C828 transistors tr c829 c829 c828 C-828 IRGTI115U06 c826 PDF

    IRGKI115U06

    Contextual Info: International üHRectifier PD-9.963B IRGKI115U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT V CE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


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    25KHz 100KHz IRGKI115U06 C-781 0G2D571 C-782 5S452 IRGKI115U06 PDF

    C818

    Abstract: rq20 C814 c815
    Contextual Info: PD-9.953B bitemational lüIR ectifier IRGTI050U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


    OCR Scan
    25KHz 100KHz IRGTI050U06 C-817 C-818 C818 rq20 C814 c815 PDF

    Contextual Info: PD-9.969B kitemational [^ R ectifier IRGNI050U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT High Side Switch - • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


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    25KHz 100KHz IRGNI050U06 C-793 C-794 PDF

    9956b

    Abstract: c836 irgti140u06 diode c832 c833 *9956b 956B 4ASS452 mosfet c836
    Contextual Info: International S Rectifier PD-9.956B IRGTI140U06 “HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT V CE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


    OCR Scan
    25KHz 100KHz IRGTI140U06 100nH C-836 4ASS452 0050b2b 9956b c836 irgti140u06 diode c832 c833 *9956b 956B mosfet c836 PDF

    DIODE c802

    Abstract: IRGNI115U06
    Contextual Info: bitemational [ t o r Rectifier PD'"71 IRGNI115U06 “CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


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    25KHz 100KHz IRGNI115U06 C-806 DIODE c802 IRGNI115U06 PDF

    DIODE C817

    Abstract: DIODE C813 953B IRGTI050U06 C814 C817 C813
    Contextual Info: International ï «k Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE" IGBTINT-A-PAK Ultra-fast Speed 1GBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 2 5K H z hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


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    25KHz 100KHz supplies817 IRGTI050U06 10OnH C-818 DIODE C817 DIODE C813 953B C814 C817 C813 PDF

    Contextual Info: FEATURES • SUPER SLEW — 5000V/usec • HIGH BANDWIDTH — 100MHz • OUTPUT CURRENT TO 400mA • PIN COMPATIBILITY WITH 3554 • HIGH DC ACCURACY — ±5mV Vos • LOW DISTORTION — 70dB at 100kHz APPLICATIONS • LINE DRIVERS • DATA ACQUISITION SYSTEMS


    OCR Scan
    000V/usec 100MHz 400mA 100kHz PDF

    IRGTI090U06

    Abstract: c823 1C00 954B C824 c821 ls IRGT1090U06 apak
    Contextual Info: International Hü Rectifier PD-9.954B IRGTI090U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT V c e = 600V .Rugged Design •Simple gate-drive .Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant .Switching-Loss Rating includes all "tail"


    OCR Scan
    IRGTI090U06 25KHz 100KHz C-823 IRGTI090U06 100nH 10-1NT-A-PAK C-824 c823 1C00 954B C824 c821 ls IRGT1090U06 apak PDF

    IRGTI090U06

    Abstract: IGBT 75 D
    Contextual Info: Alternation^ Sor]Rectifier PD'"Í4B IRGTI090U06 "HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT Half-Bridge VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


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    25KHz 100KHz IRGTI090U06 C-824 IRGTI090U06 IGBT 75 D PDF

    eutectic 157

    Abstract: q1006-bd 15OSC0502 DM6030HK TS3332LD XQ1006-BD XQ1006-BD-000V XQ1006-BD-EV1
    Contextual Info: 14.7-15.7 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1006-BD On-Chip Prescaler +5.0 dBm Output Power -35 dBc Harmonic Suppression -88 dBc/Hz @ 100KHz Phase Noise 110mA @ 4.0V Bias Supply 100% On-Wafer, DC and Output Power Testing


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    17-Apr-07 Q1006-BD 100KHz 110mA MIL-STD-883 XQ1006-BD XQ1006-BD-000V XQ1006-BD-EV1 XQ1006 eutectic 157 q1006-bd 15OSC0502 DM6030HK TS3332LD XQ1006-BD XQ1006-BD-000V XQ1006-BD-EV1 PDF

    Contextual Info: 14.7-15.7 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1006-BD On-Chip Prescaler +5.0 dBm Output Power -35 dBc Harmonic Suppression -88 dBc/Hz @ 100KHz Phase Noise 110mA @ 4.0V Bias Supply 100% On-Wafer, DC and Output Power Testing


    Original
    17-Apr-07 Q1006-BD 100KHz 110mA MIL-STD-883 XQ1006-BD XQ1006-BD-000V XQ1006-BD-EV1 XQ1006 PDF

    IRGKI115U06

    Abstract: C779 LC115
    Contextual Info: PD-9.963B bitem ational [^ R e c tifie r IRGKI115U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


    OCR Scan
    IRGKI115U06 25KHz 100KHz C-781 IRGK1115U06 C-782 IRGKI115U06 C779 LC115 PDF

    C811 diode

    Abstract: c812 IRGNI140U06
    Contextual Info: bitemational S Rectifier PD ‘"72B IRGNI140U06 •CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT High SicJe Switch - 03 • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"


    OCR Scan
    25KHz 100KHz IRGNI140U06 C-812 C811 diode c812 IRGNI140U06 PDF

    Q1005-BD

    Abstract: 14OSC0501 DM6030HK TS3332LD XQ1005-BD XQ1005-BD-000V XQ1005-BD-EV1
    Contextual Info: 14.2-15.2 GHz GaAs MMIC Voltage Controlled Oscillator April 2007 - Rev 17-Apr-07 Q1005-BD On-Chip Prescaler +6.0 dBm Output Power -88 dBc/Hz @ 100KHz Phase Noise -40 dBc Harmonic Suppression 110mA @ 4.0V Bias Supply 100% On-Wafer, DC and Output Power Testing


    Original
    17-Apr-07 Q1005-BD 100KHz 110mA MIL-STD-883 XQ1005-BD XQ1005-BD-000V XQ1005-BD-EV1 XQ1005 Q1005-BD 14OSC0501 DM6030HK TS3332LD XQ1005-BD XQ1005-BD-000V XQ1005-BD-EV1 PDF

    IC 566 vco

    Abstract: vco mimix 6OSC0461 84-1LMI bond wire gold
    Contextual Info: 5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator May 2005 - Rev 05-May-05 6OSC0461 Features Chip Device Layout tio n On-Chip Resonator +5.0 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing


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    05-May-05 6OSC0461 100KHz MIL-STD-883 IC 566 vco vco mimix 6OSC0461 84-1LMI bond wire gold PDF

    Contextual Info: 7.4-8.6 GHz GaAs MMIC Voltage Controlled Oscillator May 2005 - Rev 05-May-05 8OSC0464 Features Chip Device Layout tio n On-Chip Resonator +5.0 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing


    Original
    05-May-05 8OSC0464 100KHz MIL-STD-883 PDF