10ONH Search Results

LQN2A

Abstract: LQN2A22NM LQN2A82NM LQN2AR10K04 LQN2A33NM Murata lqn2a 8N8 marking LQN2AR18K LQN2A47 lqn2a10nm
Contextual Info: SURFACE MOUNT INDUCTORS LQN1A/2A Series The LQN1A and LQN2A Series are comprised of air-core chip coils having sub-miniature alumina core bobbins. These coils are excellent in high-frequency video and communication applications because of their high Q values

shct

Abstract: WE VQE 24 E IRGTDN150M12 IR 501
Contextual Info: International ^R ectifier PD9206 IRGTDN150M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V Œ = 1200V lc = 1 5 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail'1 losses •Short circuit rated Vce O N < 2 .5 V

9956b

Abstract: c836 irgti140u06 diode c832 c833 *9956b 956B 4ASS452 mosfet c836
Contextual Info: International S Rectifier PD-9.956B IRGTI140U06 “HALF-BRIDGE" IGBT INT-A-PAK Ultra-fast Speed IGBT V CE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

GE DIODE

Abstract: C769
Contextual Info: International [ragRectifier PD-9.961 B IRGKI050U06 "C H O P P E R " IGBT INT-A-PAK Ultra-fast Speed IGBT Low Side Switch o3 •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■

GP600FHB16S

Contextual Info: GP600FHB16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4545 - 2.6 DS4545 - 2.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.

NE8392A

Abstract: NE8392AA IN916 NE8392AN AC DC transformer Philips CD235 "network interface controller"
Contextual Info: Philips Semiconductors Data Communications Products Product specification Coaxial transceiver interface for Ethernet/Thin Ethernet DESCRIPTION NE8392A PIN CONFIGURATION The NE8392A Coaxial Transceiver Interface CTI is a coaxial line driver/receiver for Ethernet (10base5) and Thin Ethernet (10base2)

Contextual Info: 130.38 MHz Filter for CDMA Subscriber Applications Part Number 855326 S-Parameter Data Available Continued on follow ing page T y p ic a l / / / ' y 's P e r f o r m a n c t? \ \ \ ' V/ ’ V ’ V fV V Horizontal: 1 M H z / D iv Vertical: 1 0d B / D iv

philips dl 701 application

Abstract: philips dl 701 DC-DC SOT28 SOT261-3 IC-19 NE83Q92 NE83Q92A20 NE83Q92D philips dl 701 K NE83Q93
Contextual Info: INTEGRATED CIRCUITS NE83Q92 Low-power coaxial Ethernet transceiver Product specification 1995 May 1 IC-19 Data handbook Philips Semiconductors PHILIPS PHILIPS is Material Copyrigh y -¿ii[ ô2b O Q Û ci?3T S 71 Philips Semiconductors Product specification

IRGTI090U06

Abstract: c823 1C00 954B C824 c821 ls IRGT1090U06 apak
Contextual Info: International Hü Rectifier PD-9.954B IRGTI090U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT V c e = 600V .Rugged Design •Simple gate-drive .Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant .Switching-Loss Rating includes all "tail"

IRGKI200F06

Abstract: IGBT FF 300 l200a
Contextual Info: International lü Rectifier PD-9.968C IRGKI200F06 Fast Speed IGBT "CH O PPER “ IGBT INT-A-PAK V CE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all “tail"

OF IGBT 300A 500V

Abstract: IRGTDN300M06 ETH9
Contextual Info: brtemational Im i Rectifier Provisional Data Sheet PD-9.1179 IRGTDN300M06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Half-Bridge —O3 VCE = 600V lc = 300A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"

Contextual Info: MICRO POWE R S Y S T E M S INC blE » m h D T 7 44 H G G G 4 fl2 b IDS H U P S MP87095 CMOS Very Low Power 10-Bit Analog-to-Digital Converter M Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • • 10-Bit Resolution

Contextual Info: R F H MICRO DEVICES RF2604 LINEAR IF AM PLIFIER W ITH AGC AND RSSI Typ ical A p plications • Broadband PCS Receivers • CATV Set-top and Head-end Systems • High Data Rate Digital Systems • Portable Battery Powered Equipment • Dual Mode Digital/Analog Receivers

DD-221

Abstract: dioda module
Contextual Info: Preliminary Data S heet No. P D -9.936 International S Rectifier IRGNI0075M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT High Side Switch Chopper V CE= 1 2 0 0 V _ - o 3 I nr - «• 5 . . Rugged Design • Simple gate-drive .Fast operation up to 10 kHz hard switching,

200a 300v mosfet

Contextual Info: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

Diode C219

Abstract: fast recovery diode 600v 120a 958B IRGTI120F06 DIODE 47N DIODE RG
Contextual Info: International [ï«r!Rectifier PM95aB IRGTI120F06 "HALF-BRIDGE" IG BT INT-A-PAK Fast Speed IG BT V CE = 600V • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail”

high efficiency current mode flyback converter

Abstract: 36Vto 4412DY 55206-A2 N CHANNEL MOSFET MIL GRADE 55380-A2 NEC NeoCap AVXTPSD107M010R0065 lt1339 application note pc 817 mosfet gate drive
Contextual Info: Final Electrical Specifications r r u v _ LTC1775 m TECHNO LO G Y High Pow er No R s e n s e C urrent M o d e Synchronous S tep-D ow n S w itching R egu lator FCnTURCS D iS C R IP T IO n • Highest Efficiency Current Mode Controller ■ No Sense Resistor Required

IRGKIN150M06

Contextual Info: International ioRlRectifier Provisional Data Sheet PD-9.1150 IRGKIN150M06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT V Œ = 600V lc = 150A V ce ON < 2.0V • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

C559

Abstract: IRGRDN300M12 IRGDDN300M12
Contextual Info: IRGDDN300M12 IRGRDN300M12 — hecnner "SINGLE SW ITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V CE= 1200V lc = 300A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated V ce ON < 2.7V tsc> 10ms

ge traction motor

Contextual Info: GP500LSS06S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R DS4324 - 4.4 Decem ber 1998 S upersedes July 1998 version, DS4324 - 4.3 The GP500LSS06S is a single switch 600V, robust n channel e nhancem ent mode insulated gate bipolar transistor IGBT . Designed for low power loss, the module

GP600FHB16S

Abstract: DS4545
Contextual Info: GP600FHB16S @ M IT E L Powerline N-Channel IGBT Module S E M IC O N D U C T O R S upersedes March 1998 version, DS4545 - 2. DS4545 - 2.7 Decem ber 1998 TYPICAL KEY PARAMETERS VCES 1600V VCE(sa„ 3.5V APPLICATIONS • High Power Switching. ■ Motor Control.

Contextual Info: GP600DHB16S M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R Supersedes March 1997 version, DS4335 - 5.6 DS4335 - 5.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.

Contextual Info: R F H RF2609 MICRO DEVICES CDMA/FM TR A N SM IT AGC AM PLIFIER Typ ical A p plications • CDMA/FM Cellular Systems • General Purpose Linear IF Amplifier • Supports Dual-Mode AM PS/CDMA • Portable Battery Powered Equipment • Supports Dual-Mode TACS/CDMA