100N Search Results

1r5nu41

Contextual Info: SILICON D IFFUSED T Y P E S U P E R FA ST R E C O V E R Y RECTIFIER 1R5NU41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS. . Repetitive Peak Reverse Voltage : V r r >i=1C00V . Average Forward Current : Ip AV =1.5A . Very Fast Reverse-Recovery Time : trr=100ns

2N4403

Contextual Info: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

Contextual Info: SILICON DIFFUSED TYPE RECTIFIER 1JU42 HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY . Average Forward Current : If (AV)=1.0A . Repetitive Peak Reverse Voltage : V r r h =600V . Reverse Recovery Tine : trr=100ns(Max.) . Plastic Mold Type. MAXIMUM RATINGS

28F512A

Abstract: 28F512A-12
Contextual Info: SMJS514C-FEBRUARY 1 Organization. . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible TMS28F512A 65536 BY 8-BIT FLASH MEMORY m - REVISED AUGUST 1997 FM PACKAGE TOP VIEW Vgc Tolerance ±10% Maximum Access/Minimum Cycle Time '28F512A-10 100ns ’28F512A-12

12nh1

Abstract: LL1005-FHL1N5S LL1005-FHL3N3S 18nH10 4105N LL1005-FHL2N0S
Contextual Info: Multilayer Chip Inductors 叠层片式电感器 LL1005-FHL Inductance Range: 1.0~100nH E-24 Series 特殊对应品 order production available (1.1nH, 1.3nH, 1.6nH, 2.0nH, 2.4nH, 3.0nH, 3.6nH, 4.3nH, 5.1nH, 6.2nH, 7.5nH, 9.1nH) Temperature Coefficient of L: + 250ppm/°C (for reference only)

Contextual Info: 1GU42 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 1GU42 Unit: mm HIGH SPEED RECTIFIER APPLICATIONS FAST RECOVERY z Average Forward Current : IF (AV) = 1.0A z Repetitive Peak Reverse Voltage : VRRM = 400V z Reverse Recovery Time : trr = 100ns (Max) z Plastic Mold Type.

8X13

Contextual Info: tm TE CH Preliminary T15S256A CMOS STATIC RAM SRAM 32K X 8 LOW POWER FEATURES GENERAL DESCRIPTION ¡EHigh speed access time: 50/70/85/100ns The T15S256A is a low power and low voltage CMOS static RAM. organized as 32,768 x 8 bits that operates on a 1.2V to 1.8V power supply. Data

HCF4018be

Abstract: hfc4018 HCF4011 4018B HCC/HFC4018B HCC4018B HCC4018BF HCF4018B HCF4018BC1 HCF4018BEY
Contextual Info: HCC/HCF4018B PRESETTABLE DIVIDE-BY-N COUNTER . . . . . . MEDIUM SPEED OPERATION - 10MHz typ. AT VDD – VSS = 10V FULLY STATIC OPERATION QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS INPUT CURRENT OF 100nA AT 18V AND 25°C

14Q7

Contextual Info: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access

100N25

Abstract: ID104
Contextual Info: HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM

YTS4400

Contextual Info: SILICON NPN EPITAXIAL TYPE YTS4400 U n i t in m m FOR G E N E R A L P U R POSE USE S W I T C H I N G A N D A M P L I F I E R * 0. 5 8 . 5 - 0. 3 APPLICATIONS. + 0.25 , 1 -5 - 0 1 5 FEATURES: EE • Low Leakage Current : I c E V = 1 0 0 tlJ' M a x - > lEj;y=-100nA (Max. )

SRM20100LRM70

Contextual Info: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

marking SL Y8

Contextual Info: TYPE 46 MuttHayer Chip Inductors LL1608-FH s ’# Series 9 *? TYPE LL1608-FH Series Inductance Range: 1.2~100nH E-12 Temperature Coefficient of L: +250ppm/°C, typical Marking of polarity Marking : Blue Green •dimensions / m m m Length (mm) Width (mm)

Contextual Info: SILICON DIFFUSED TYPE SUPER FAST RECOVERY RECTIFIER U05NU44 SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetivier Peak Reverse Voltage : Vrrji=1000V . Average Forward Current p : If a V =0.5A . Very Fast Reverse-Recovery Time : trr=100ns(Max.)

PDM31096

Abstract: PDM31096LL
Contextual Info: PDM31096LL PRELIMINARY 512K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31096LL Active: 65 mW Standby: 10µW The PDM31096LL is a very low power CMOS static RAM organized as 524,288 x 8 bits. Writing to this

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current

Contextual Info: HCC4000B series RadHardened high voltage complementary MOS logic series Data Brief Features • 20V max operating voltage ■ Bufferized inputs and outputs ■ Standardized symmetrical outputs characteristic ■ 50ns typical propagation delays ■ 100nA max 25°C input current