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    100N50 Search Results

    100N50 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    100N50TW
    		Anaren RF/IF and RFID - Attenuators - RF ATTENUATOR 50OHM Original PDF 230.69KB
    SF Impression Pixel

    100N50 Price and Stock

    TTM Technologies

    TTM Technologies I100N50X4B

    RF ATTENUATOR 50OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey I100N50X4B Tray 973 1
    • 1 $7.04
    • 10 $6.11
    • 100 $5.40
    • 1000 $4.69
    • 10000 $4.69
    		Buy Now
    Mouser Electronics I100N50X4B 1,022
    • 1 $8.73
    • 10 $6.89
    • 100 $4.98
    • 1000 $4.49
    • 10000 $4.49
    		Buy Now
    Richardson RFPD I100N50X4B 356 1
    • 1 $7.40
    • 10 $7.40
    • 100 $6.64
    • 1000 $3.98
    • 10000 $3.98
    		Buy Now

    TTM Technologies K100N50X4B

    RF ATTENUATOR 50OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey K100N50X4B Tray 871 1
    • 1 $7.04
    • 10 $6.11
    • 100 $5.40
    • 1000 $4.69
    • 10000 $4.69
    		Buy Now
    Mouser Electronics K100N50X4B 621
    • 1 $7.04
    • 10 $6.11
    • 100 $4.98
    • 1000 $4.49
    • 10000 $4.49
    		Buy Now
    Richardson RFPD K100N50X4B 750 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.98
    • 10000 $3.98
    		Buy Now

    TTM Technologies C100N50Z4A

    RF ATTENUATOR 50OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () C100N50Z4A Digi-Reel 830 1
    • 1 $5.15
    • 10 $4.45
    • 100 $3.88
    • 1000 $3.54
    • 10000 $3.54
    		Buy Now
    C100N50Z4A Cut Tape 830 1
    • 1 $5.15
    • 10 $4.45
    • 100 $3.88
    • 1000 $3.54
    • 10000 $3.54
    		Buy Now
    Mouser Electronics C100N50Z4A 652
    • 1 $5.15
    • 10 $4.45
    • 100 $3.88
    • 1000 $3.02
    • 10000 $2.87
    		Buy Now
    Richardson RFPD () C100N50Z4A 72 1
    • 1 $1.44
    • 10 $1.44
    • 100 $1.44
    • 1000 $1.44
    • 10000 $1.44
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    C100N50Z4A 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.81
    • 10000 $2.81
    		Buy Now

    TTM Technologies J100N50X4

    RF ATTENUATOR 50OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey J100N50X4 Tray 750 1
    • 1 $7.04
    • 10 $6.11
    • 100 $5.40
    • 1000 $4.69
    • 10000 $4.69
    		Buy Now
    Mouser Electronics J100N50X4 608
    • 1 $7.04
    • 10 $6.11
    • 100 $4.98
    • 1000 $4.79
    • 10000 $4.79
    		Buy Now
    Richardson RFPD J100N50X4 1,160 1
    • 1 $2.30
    • 10 $2.30
    • 100 $2.30
    • 1000 $2.30
    • 10000 $2.30
    		Buy Now

    TTM Technologies J100N50X4B

    RF ATTENUATOR 50OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey J100N50X4B Tray 691 1
    • 1 $7.04
    • 10 $6.11
    • 100 $5.33
    • 1000 $4.69
    • 10000 $4.69
    		Buy Now
    Mouser Electronics J100N50X4B 468
    • 1 $5.63
    • 10 $4.89
    • 100 $4.07
    • 1000 $3.92
    • 10000 $3.78
    		Buy Now
    Richardson RFPD J100N50X4B 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more 100N50 price and stock on Findchips.com

    100N50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Model 100N50TW Flanged Termination 100 Watts, 50Ω General Specifications Resistive Element Substrate Cover Mounting Flange Lead s : Features: • DC – 5.0 GHz • 100 Watts • AlN Ceramic • Non-Nichrome Resistive Element • Low VSWR Thick film Aluminum Nitride ceramic


    Original     		100N50TW QQ-N-290 MIL-E-5400. PDF

    100N50P

    Abstract: mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ±30


    Original     		100N50P 100N50P mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250 PDF

    Contextual Info: Model RFP-100N50TW RoHS Compliant Flanged Resistors 100 Watts, 50Ω General Specifications Resistive Element Substrate Cover Mounting flange Leads Features: • DC – 5.0 GHz • 100 Watts • Aluminum Nitride Ceramic • Non-Nichrome Resistive Element • Welded Silver Leads


    Original     		RFP-100N50TW QQ-N-290 MIL-E-5400. 100N50TW PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS


    Original     		100N50P PLUS264TM PDF

    100N50P

    Abstract: 100n50 S20NF
    Contextual Info: IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A Ω RDS on ≤ 52 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C


    Original     		100N50P ISOPLUS264TM ISOPLUS264 100N50P 100n50 S20NF PDF

    RFP-100N50TW

    Contextual Info: RFP-100N50TW Aluminum Nitride Termination VER3/14/01 Description: RFP-100N50TW Features: o 1kHz – 5.0 GHz o 100 Watts o Aluminum Nitride AlN ceramic o Welded Silver leads o Non-Nicrome resistive element o Low VSWR o 100% Tested The RFP-100N50TW is a general purpose 100 Watt


    Original     		RFP-100N50TW VER3/14/01 RFP-100N50TW 700oF) PDF

    IXFN 100N50P

    Abstract: 100N50P IXFN100N50P sot 227b diode fast 100n50 90A49 S20NF
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ±30


    Original     		100N50P IXFN 100N50P 100N50P IXFN100N50P sot 227b diode fast 100n50 90A49 S20NF PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 100N50P VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		100N50P PDF

    100N50P

    Abstract: 100n50
    Contextual Info: IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A Ω RDS on ≤ 52 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		100N50P ISOPLUS264TM 100N50P 100n50 PDF

    100N50

    Abstract: RFP-100N50TW RFP100N50 SN63
    Contextual Info: 100 Watts, 50 Ω General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Thick film Aluminum nitride ceramic Alumina ceramic Copper, nickel plated per QQ-N-290 99.99% pure silver .005” thk Lead(s): Features • DC – 5.0 GHz Electrical Specifications


    Original     		QQ-N-290 RFP-100N50TW 100N50 RFP-100N50TW RFP100N50 SN63 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF