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    OMRON Industrial Automation A22NL-RMM-TOA-P100-OC

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    OMRON Industrial Automation A22NL-RPM-TOA-P100-OC

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    OMRON Industrial Automation A22NL-RMM-TOA-G100-OC

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    OMRON Industrial Automation A22NW-2RL-TOA-P100-OC

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    100OC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TB-285

    Contextual Info: Ceramic High Pass Filter 50Ω HFCN-4400+ 5000 to 10100 MHz Maximum Ratings Operating Temperature -55oC to 100oC Storage Temperature -55 C to 100 C o • • • • • • • o RF Power Input *derate linearly to 3W at 100°C ambient 7W* Pin Connections


    Original     		-55oC 100oC HFCN-4400+ FV1206-1 HFCN-4400D+ 2002/95/EC) TB-285 PL-158) M106185 PDF

    STW6NA90

    Abstract: sd 50 diode
    Contextual Info: STW6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STW6NA90 100oC O-247 STW6NA90 sd 50 diode PDF

    STD15N06

    Contextual Info: STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD15N06 60 V < 0.1 Ω 15 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STD15N06 100oC 175oC O-251) O-252) STD15N06 PDF

    STP6N60FI

    Contextual Info: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		STP6N60FI 100oC ISOWATT220 STP6N60FI PDF

    STB18N20

    Abstract: isd 2100
    Contextual Info: STB18N20 N-CHANNEL 200V - 0.145Ω - 18A I2PAK/D2PAK POWER MOSFET TRANSISTOR TYPE STB18N20 • ■ ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200 V <0.18 Ω 18 A TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STB18N20 100oC O-262) O-263) O-262 O-263 STB18N20 isd 2100 PDF

    STD6N10

    Contextual Info: STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD6N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.45 Ω 6A TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STD6N10 100oC 175oC O-251) O-252) STD6N10 PDF

    BA232

    Abstract: Edal Series BA232 Silicon Bridge Rectifier BRIDGE-RECTIFIER BA232-10 Bridge rectifier piv bridge rectifier BA232-5 ba2322 ba2325
    Contextual Info: Edal SERIES BA232 Silicon Bridge Rectifier ELECTRICAL RATINGS FOR SINGLE PHASE BRIDGE CIRCUIT MAXIMUM ALLOWABLE DC OUTPUT CURRENT: AT 55o C AMBIENT TEMPERATURE AT 100oC AMBIENT TEMPERATURE 2.0 AMPS 1.2 AMPS MAXIMUM SINGLE CYCLE SURGE CURRENT IFSM 60 AMPS


    Original     		BA232 100oC BA232-5 BA232-10 BA232-20 BA232-30 BA232-40 BA232-50 BA232-60 BA232-70 BA232 Edal Series BA232 Silicon Bridge Rectifier BRIDGE-RECTIFIER BA232-10 Bridge rectifier piv bridge rectifier BA232-5 ba2322 ba2325 PDF

    9407a

    Abstract: BPF-A1340 PL-227 048002
    Contextual Info: Surface Mount Bandpass Filter 50Ω BPF-A1340+ 1000 to 1800 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 1W at 25oC • • • • Good VSWR, 1.4:1 Typ @ Passband High Rejection Shielded case


    Original     		BPF-A1340+ -55oC 100oC 2002/95/EC) HQ1157 M121478 EDR-9407AUF1 9407a BPF-A1340 PL-227 048002 PDF

    BPF-A127

    Contextual Info: Surface Mount Bandpass Filter 50Ω BPF-A127+ 118 to 137 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 0.5*W at 25oC *Passband rating, derate linearly to 0.25W at 100oC ambient. • •


    Original     		BPF-A127+ -55oC 100oC 100oC 2002/95/EC) HQ1157 M117937 EDR-9028AU BPF-A127 PDF

    TB 6064

    Abstract: BPF-A122
    Contextual Info: Surface Mount Bandpass Filter 50Ω BPF-A122+ 119 to 125 MHz Maximum Ratings Features o Operating Temperature Storage Temperature RF Power Input • Good VSWR, 1.3:1 Typ @ Pass Band • High Stop Band Rejection o -40 C to 85 C -55oC to 100oC 0.5*W at 25oC Application


    Original     		BPF-A122+ -55oC 100oC 100oC M102075 EDR-7824U TB 6064 BPF-A122 PDF

    BUZ80

    Abstract: BUZ80FI transistor BUZ80
    Contextual Info: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 800 V 800 V <4Ω <4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80 BUZ80FI transistor BUZ80 PDF

    STD2N50

    Contextual Info: STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD2N50 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 500 V < 5.5 Ω 2A TYPICAL RDS(on) = 4.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		STD2N50 100oC O-251) O-252) O-251 O-252 STD2N50 PDF

    STP5N30

    Abstract: STP5N30FI
    Contextual Info: STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30 STP5N30FI • ■ ■ ■ ■ VDSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP5N30 STP5N30FI 100oC O-220 ISOWATT220 STP5N30 STP5N30FI PDF

    STB6NA80

    Contextual Info: STB6NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB6NA80 800 V < 1.9 Ω 5.7 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STB6NA80 100oC O-262) O-263) STB6NA80 PDF

    IRF740

    Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET
    Contextual Info: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		IRF740 IRF740FI 100oC O-220 ISOWATT220 IRF740 IRF740FI transistor equivalent irf740 irf740 DATA SHEET PDF

    STP5N30L

    Abstract: STP5N30LFI
    Contextual Info: STP5N30L STP5N30LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30L STP5N30LFI • ■ ■ ■ ■ V DSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		STP5N30L STP5N30LFI 100oC O-220 ISOWATT220 STP5N30L STP5N30LFI PDF

    IRF730FI

    Abstract: IRF730 OC470 irf730f
    Contextual Info: IRF730 IRF730FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF730 IRF730FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 1Ω < 1Ω 5.5 A 3.5 A TYPICAL RDS(on) = 0.82 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		IRF730 IRF730FI 100oC O-220 ISOWATT220 IRF730FI IRF730 OC470 irf730f PDF

    TO-252 MOSFET p channel

    Contextual Info: STD30NE06L  N - CHANNEL 60V - 0.025 Ω - 30A TO-252 STripFET POWER MOSFET TYPE V DSS R DS o n ID STD30NE06L 60 V < 0.03 Ω 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.025 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100oC


    Original     		STD30NE06L O-252 100oC TO-252 MOSFET p channel PDF

    10858

    Abstract: M9703
    Contextual Info: Surface Mount NEW! Band Pass Filter RBP-275 268 to 282 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Input Features • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.35" X 0.35" -40 C to 85 C -55oC to 100oC 0.5W at 25oC


    Original     		-55oC 100oC RBP-275 GP731 TB-332 PL-176) RBP-275 M97032 10858 M9703 PDF

    TO-247ad

    Abstract: SBL4030PT SBL4035PT SBL4040PT SBL4045PT
    Contextual Info: SBL4030PT thru SBL4045PT Low VF Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode SBL4030PT SBL4035PT SBL4040PT SBL4045PT Symbol VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 Characteristics @TC=100oC


    Original     		SBL4030PT SBL4045PT O-247AD SBL4030PT SBL4035PT SBL4040PT O-247AD TO-247ad SBL4035PT SBL4040PT SBL4045PT PDF

    s3pdb85n18

    Abstract: S3PDB85N16 S3PDB85N08 S3PDB85N12 S3PDB85N14 S3PDB85 pwm INVERTER S3PDB
    Contextual Info: S3PDB85 Three Phase Rectifier Modules Dimensions in mm 1mm=0.0394" Type S3PDB85N08 S3PDB85N12 S3PDB85N14 S3PDB85N16 S3PDB85N18 – + VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 ~~~ Symbol Idav Test Conditions TC=100oC, module o Maximum Ratings


    Original     		S3PDB85 S3PDB85N08 S3PDB85N12 S3PDB85N14 S3PDB85N16 S3PDB85N18 100oC, 50/60Hz, s3pdb85n18 S3PDB85N16 S3PDB85N08 S3PDB85N12 S3PDB85N14 S3PDB85 pwm INVERTER S3PDB PDF

    M5 DIODE 22-35 L

    Abstract: DIODE 22-35 L M5 DIODE 22-35 SDD36 SDD36N08 SDD36N12 SDD36N14 pwm 50hz
    Contextual Info: SDD36 Diode-Diode Modules Dimensions in mm 1mm=0.0394" Type SDD36N08 SDD36N12 SDD36N14 SDD36N16 SDD36N18 Symbol IFRMS IFAVM VRSM V 900 1300 1500 1700 1900 Test Conditions TVJ=TVJM TC=100oC; 180o sine VRRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 60


    Original     		SDD36 SDD36N08 SDD36N12 SDD36N14 SDD36N16 SDD36N18 100oC; 50/60Hz, 180oC M5 DIODE 22-35 L DIODE 22-35 L M5 DIODE 22-35 SDD36 SDD36N08 SDD36N12 SDD36N14 pwm 50hz PDF

    RBP-400

    Abstract: GP731
    Contextual Info: Surface Mount Band Pass Filter RBP-400+ 292 to 490 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good VSWR, 1.5:1 Typ @ Pass Band • Small Size 0.35" X 0.35" • •


    Original     		RBP-400+ -55oC 100oC GP731 2002/95/EC) M104389 EDR-7836AU RBP-400 GP731 PDF

    gp731

    Abstract: RF band pass filter RBP-275
    Contextual Info: RBP-275+ RBP-275 Surface Mount Band Pass Filter 268 to 282 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.35" X 0.35"


    Original     		RBP-275+ RBP-275 -55oC 100oC 2002/95/EC) GP731 TB-332 PL-176) gp731 RF band pass filter RBP-275 PDF