TB-285
Abstract: No abstract text available
Text: Ceramic High Pass Filter 50Ω HFCN-4400+ 5000 to 10100 MHz Maximum Ratings Operating Temperature -55oC to 100oC Storage Temperature -55 C to 100 C o • • • • • • • o RF Power Input *derate linearly to 3W at 100°C ambient 7W* Pin Connections
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-55oC
100oC
HFCN-4400+
FV1206-1
HFCN-4400D+
2002/95/EC)
TB-285
PL-158)
M106185
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STW6NA90
Abstract: sd 50 diode
Text: STW6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STW6NA90
100oC
O-247
STW6NA90
sd 50 diode
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STD15N06
Abstract: No abstract text available
Text: STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD15N06 60 V < 0.1 Ω 15 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STD15N06
100oC
175oC
O-251)
O-252)
STD15N06
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STP6N60FI
Abstract: No abstract text available
Text: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED
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STP6N60FI
100oC
ISOWATT220
STP6N60FI
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STB18N20
Abstract: isd 2100
Text: STB18N20 N-CHANNEL 200V - 0.145Ω - 18A I2PAK/D2PAK POWER MOSFET TRANSISTOR TYPE STB18N20 • ■ ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200 V <0.18 Ω 18 A TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STB18N20
100oC
O-262)
O-263)
O-262
O-263
STB18N20
isd 2100
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STD6N10
Abstract: No abstract text available
Text: STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD6N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.45 Ω 6A TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STD6N10
100oC
175oC
O-251)
O-252)
STD6N10
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BA232
Abstract: Edal Series BA232 Silicon Bridge Rectifier BRIDGE-RECTIFIER BA232-10 Bridge rectifier piv bridge rectifier BA232-5 ba2322 ba2325
Text: Edal SERIES BA232 Silicon Bridge Rectifier ELECTRICAL RATINGS FOR SINGLE PHASE BRIDGE CIRCUIT MAXIMUM ALLOWABLE DC OUTPUT CURRENT: AT 55o C AMBIENT TEMPERATURE AT 100oC AMBIENT TEMPERATURE 2.0 AMPS 1.2 AMPS MAXIMUM SINGLE CYCLE SURGE CURRENT IFSM 60 AMPS
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BA232
100oC
BA232-5
BA232-10
BA232-20
BA232-30
BA232-40
BA232-50
BA232-60
BA232-70
BA232
Edal Series BA232 Silicon Bridge Rectifier
BRIDGE-RECTIFIER
BA232-10
Bridge rectifier
piv bridge rectifier
BA232-5
ba2322
ba2325
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9407a
Abstract: BPF-A1340 PL-227 048002
Text: Surface Mount Bandpass Filter 50Ω BPF-A1340+ 1000 to 1800 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 1W at 25oC • • • • Good VSWR, 1.4:1 Typ @ Passband High Rejection Shielded case
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BPF-A1340+
-55oC
100oC
2002/95/EC)
HQ1157
M121478
EDR-9407AUF1
9407a
BPF-A1340
PL-227
048002
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BPF-A127
Abstract: No abstract text available
Text: Surface Mount Bandpass Filter 50Ω BPF-A127+ 118 to 137 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 0.5*W at 25oC *Passband rating, derate linearly to 0.25W at 100oC ambient. • •
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BPF-A127+
-55oC
100oC
100oC
2002/95/EC)
HQ1157
M117937
EDR-9028AU
BPF-A127
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TB 6064
Abstract: BPF-A122
Text: Surface Mount Bandpass Filter 50Ω BPF-A122+ 119 to 125 MHz Maximum Ratings Features o Operating Temperature Storage Temperature RF Power Input • Good VSWR, 1.3:1 Typ @ Pass Band • High Stop Band Rejection o -40 C to 85 C -55oC to 100oC 0.5*W at 25oC Application
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BPF-A122+
-55oC
100oC
100oC
M102075
EDR-7824U
TB 6064
BPF-A122
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BUZ80
Abstract: BUZ80FI transistor BUZ80
Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 800 V 800 V <4Ω <4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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BUZ80
BUZ80FI
100oC
O-220
ISOWATT220
BUZ80
BUZ80FI
transistor BUZ80
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STD2N50
Abstract: No abstract text available
Text: STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD2N50 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 500 V < 5.5 Ω 2A TYPICAL RDS(on) = 4.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED
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STD2N50
100oC
O-251)
O-252)
O-251
O-252
STD2N50
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STP5N30
Abstract: STP5N30FI
Text: STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30 STP5N30FI • ■ ■ ■ ■ VDSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STP5N30
STP5N30FI
100oC
O-220
ISOWATT220
STP5N30
STP5N30FI
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STB6NA80
Abstract: No abstract text available
Text: STB6NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB6NA80 800 V < 1.9 Ω 5.7 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STB6NA80
100oC
O-262)
O-263)
STB6NA80
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IRF740
Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET
Text: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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IRF740
IRF740FI
100oC
O-220
ISOWATT220
IRF740
IRF740FI
transistor equivalent irf740
irf740 DATA SHEET
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STP5N30L
Abstract: STP5N30LFI
Text: STP5N30L STP5N30LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30L STP5N30LFI • ■ ■ ■ ■ V DSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STP5N30L
STP5N30LFI
100oC
O-220
ISOWATT220
STP5N30L
STP5N30LFI
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IRF730FI
Abstract: IRF730 OC470 irf730f
Text: IRF730 IRF730FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF730 IRF730FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 1Ω < 1Ω 5.5 A 3.5 A TYPICAL RDS(on) = 0.82 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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IRF730
IRF730FI
100oC
O-220
ISOWATT220
IRF730FI
IRF730
OC470
irf730f
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TO-252 MOSFET p channel
Abstract: No abstract text available
Text: STD30NE06L N - CHANNEL 60V - 0.025 Ω - 30A TO-252 STripFET POWER MOSFET TYPE V DSS R DS o n ID STD30NE06L 60 V < 0.03 Ω 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.025 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100oC
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STD30NE06L
O-252
100oC
TO-252 MOSFET p channel
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10858
Abstract: M9703
Text: Surface Mount NEW! Band Pass Filter RBP-275 268 to 282 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Input Features • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.35" X 0.35" -40 C to 85 C -55oC to 100oC 0.5W at 25oC
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-55oC
100oC
RBP-275
GP731
TB-332
PL-176)
RBP-275
M97032
10858
M9703
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TO-247ad
Abstract: SBL4030PT SBL4035PT SBL4040PT SBL4045PT
Text: SBL4030PT thru SBL4045PT Low VF Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode SBL4030PT SBL4035PT SBL4040PT SBL4045PT Symbol VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 Characteristics @TC=100oC
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SBL4030PT
SBL4045PT
O-247AD
SBL4030PT
SBL4035PT
SBL4040PT
O-247AD
TO-247ad
SBL4035PT
SBL4040PT
SBL4045PT
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s3pdb85n18
Abstract: S3PDB85N16 S3PDB85N08 S3PDB85N12 S3PDB85N14 S3PDB85 pwm INVERTER S3PDB
Text: S3PDB85 Three Phase Rectifier Modules Dimensions in mm 1mm=0.0394" Type S3PDB85N08 S3PDB85N12 S3PDB85N14 S3PDB85N16 S3PDB85N18 – + VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 ~~~ Symbol Idav Test Conditions TC=100oC, module o Maximum Ratings
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S3PDB85
S3PDB85N08
S3PDB85N12
S3PDB85N14
S3PDB85N16
S3PDB85N18
100oC,
50/60Hz,
s3pdb85n18
S3PDB85N16
S3PDB85N08
S3PDB85N12
S3PDB85N14
S3PDB85
pwm INVERTER
S3PDB
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M5 DIODE 22-35 L
Abstract: DIODE 22-35 L M5 DIODE 22-35 SDD36 SDD36N08 SDD36N12 SDD36N14 pwm 50hz
Text: SDD36 Diode-Diode Modules Dimensions in mm 1mm=0.0394" Type SDD36N08 SDD36N12 SDD36N14 SDD36N16 SDD36N18 Symbol IFRMS IFAVM VRSM V 900 1300 1500 1700 1900 Test Conditions TVJ=TVJM TC=100oC; 180o sine VRRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 60
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SDD36
SDD36N08
SDD36N12
SDD36N14
SDD36N16
SDD36N18
100oC;
50/60Hz,
180oC
M5 DIODE 22-35 L
DIODE 22-35 L
M5 DIODE 22-35
SDD36
SDD36N08
SDD36N12
SDD36N14
pwm 50hz
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RBP-400
Abstract: GP731
Text: Surface Mount Band Pass Filter RBP-400+ 292 to 490 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good VSWR, 1.5:1 Typ @ Pass Band • Small Size 0.35" X 0.35" • •
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RBP-400+
-55oC
100oC
GP731
2002/95/EC)
M104389
EDR-7836AU
RBP-400
GP731
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gp731
Abstract: RF band pass filter RBP-275
Text: RBP-275+ RBP-275 Surface Mount Band Pass Filter 268 to 282 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.35" X 0.35"
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RBP-275+
RBP-275
-55oC
100oC
2002/95/EC)
GP731
TB-332
PL-176)
gp731
RF band pass filter
RBP-275
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