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    100V 1A DARLINGTON TRANSISTOR Search Results

    100V 1A DARLINGTON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    100V 1A DARLINGTON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor Ic 1A datasheet NPN

    Abstract: 2SD689 2SB679 transistor Ic 1A datasheet current amplifier note darlington darlington 5v drive IC 1A datasheet NPN Transistor 1A 100V medium power high voltage transistor npn transistor 0.1A 100V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 1A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1A


    Original     		PDF 2SB679 transistor Ic 1A datasheet NPN 2SD689 2SB679 transistor Ic 1A datasheet current amplifier note darlington darlington 5v drive IC 1A datasheet NPN Transistor 1A 100V medium power high voltage transistor npn transistor 0.1A 100V

    Ic 1A

    Abstract: 100v 1a darlington transistor 100v 1a transistor 2SB1411 transistor pnp 1a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2mA)


    Original     		PDF -100V -100V; Ic 1A 100v 1a darlington transistor 100v 1a transistor 2SB1411 transistor pnp 1a

    2SB1286

    Abstract: 2SD1646
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain:hFE = 1000 Min @ IC= -1A ·Collector-Emitter Breakdown Voltage:V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage


    Original     		PDF -100V 2SD1646 2SB1286 -100V; 2SB1286 2SD1646

    2SD1765

    Abstract: 2SB1287
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain:hFE = 1000 Min @ IC= -1A ·Collector-Emitter Breakdown Voltage:V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage


    Original     		PDF -100V 2SD1765 2SB1287 -100V; 2SD1765 2SB1287

    2SD2398

    Abstract: 2SB1567
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD2398 APPLICATIONS


    Original     		PDF -100V 2SD2398 Dissipati2SB1567 -100V; 2SD2398 2SB1567

    DARLINGTON 3A 100V npn

    Abstract: hfe 2500 NTE264
    Text: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.


    Original     		PDF NTE263 NTE264 NTE263) NTE264) DARLINGTON 3A 100V npn hfe 2500 NTE264

    FXT704

    Abstract: ZTX704 100v 1a darlington transistor DSA003757
    Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT704 ISSUE 1 – FEB 94 FEATURES * 100 Volt VCEO * Gain of 3K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 darlington transistors REFER TO ZTX704 FOR GRAPHS


    Original     		PDF FXT704 ZTX704 -100V, -10mA* -10mA, -100mA, 20MHz FXT704 100v 1a darlington transistor DSA003757

    NTE2341

    Abstract: npn darlington TO92 NTE2342
    Text: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.


    Original     		PDF NTE2341 NTE2342 NTE2341 500mA, 100MHz npn darlington TO92 NTE2342

    2SB1567

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1567 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min) • High DC Current Gain-


    Original     		PDF 2SB1567 -100V 2SD2398 O-220F 2SB1567

    Untitled

    Abstract: No abstract text available
    Text: PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP107 █ APPLICATIONS High Voltage switching.Motor driving. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃


    Original     		PDF HP107 O-220 -100V -30mA, -100V, -80mA

    NPN Transistor 8A

    Abstract: HP102 npn transistor 100v min npn 100v 1.5a DARLINGTON 3A 100V npn NPN Transistor 1A 100V
    Text: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP102 █ APPLICATIONS High Voltage switching.Motor driving. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃


    Original     		PDF HP102 O-220 NPN Transistor 8A HP102 npn transistor 100v min npn 100v 1.5a DARLINGTON 3A 100V npn NPN Transistor 1A 100V

    BDX67

    Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier


    Original     		PDF BDX66/A/B/C BDX67 BDX67C BDX67A BDX67B BDX67 npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66

    NTE262

    Abstract: NTE261 DARLINGTON 3A 100V npn
    Text: NTE261 NPN & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.


    Original     		PDF NTE261 NTE262 100mA NTE262 NTE261 DARLINGTON 3A 100V npn

    CJF6388

    Abstract: CJF6668
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications


    Original     		PDF CJF6668 O-220FP CJF6388 C-120 CJF6668Rev CJF6388 CJF6668

    CJF6388

    Abstract: CJF6668
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6668 TO-220FP Fully Isolated Plastic Package Complementary CJF6388 General Purpose Darlington Amplifier and Switching Applications


    Original     		PDF ISO/TS16949 CJF6668 O-220FP CJF6388 C-120 CJF6668Rev CJF6388 CJF6668

    CJF6388

    Abstract: CJF6668
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications


    Original     		PDF ISO/TS16949 CJF6388 O-220FP CJF6668 C-120 CJF6388Rev CJF6388 CJF6668

    TIP117

    Abstract: TIP116 TIP115 TIP-115 NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip117 TRANSISTOR equivalent NPN Transistor VCEO 80V 100V DARLINGTON 2A 80v complementary transistor tip115 transistor
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP110/111/112


    Original     		PDF TIP115/116/117 O-220 TIP110/111/112 TIP116 TIP117 TIP115 -100V, TIP117 TIP116 TIP115 TIP-115 NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip117 TRANSISTOR equivalent NPN Transistor VCEO 80V 100V DARLINGTON 2A 80v complementary transistor tip115 transistor

    NPN Transistor VCEO 80V 100V

    Abstract: darlington power pack NPN Transistor VCEO 80V 100V DARLINGTON CJF6388 CJF6668
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR DARLINGTON POWER TRANSISTOR CJF6388 TO-220FP Fully Isolated Plastic Package Complementary CJF6668 General Purpose Darlington Amplifier and Switching Applications


    Original     		PDF CJF6388 O-220FP CJF6668 C-120 CJF6388Rev NPN Transistor VCEO 80V 100V darlington power pack NPN Transistor VCEO 80V 100V DARLINGTON CJF6388 CJF6668

    nte2544

    Abstract: No abstract text available
    Text: NTE2544 Silicon NPN Transistor Darlington Driver Features: D Darlington Conncetion D High DC Current Gain D Low Dependence of DC Current Gain on Temperature Applications: D Motor Driver D Printer Hammer Driver D Relay Driver Absolute Maximum Ratings: TA = +25°C unless otherwise specified


    Original     		PDF NTE2544 nte2544

    ULN2003NA

    Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
    Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module


    OCR Scan     		PDF TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    FXT704

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT704 ISSUE 1 - FEB 94_ FEATURES * 100 V o lt VCE0 * Gain o f 3 K a t lc=1 A m p * P,0,= 1 W a tt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of T 0 1 2 6 and T 0 2 2 0 darlington transistors


    OCR Scan     		PDF TX704 FXT704 -100hA -100V, 100-C -10mA* -10mA, -100mA, 20MHz FXT704

    SQD65BB75

    Abstract: sqd65B
    Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.


    OCR Scan     		PDF SQP65BB75 SQD65BB75 00DEE22 SQD65BB75 sqd65B

    VQC10

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 IS SU E 2 - SEPTEM BER 1995 FEA TU RES * 2A CONTINUOUS CURRENT * FA ST SW ITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COM PLEM ENTARY TYPE - FZT604 PART MARKING D ETAIL FZT704 •= ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		PDF OT223 FZT704 FZT604 FZT705 Tamb-25 VQC10