100X100X2 Search Results

VM-10V

Abstract: LA5659
Contextual Info: - 9 4 - LA5659 « Œ * 3 Ë # 5 V , 1 A ffi*, m m m V V0A Vo tí * en H II H L L H - tfg m a k -m a s I 20 3 i 18 J 6 1$• h~\ S i* ■012 P*1 0 100X100X2« ^ w 8s o I - 1 1 75W «o F n U'13-jT'lMi I -4 0 -2 0 ifc 2 m 6 ss . »* hfe. 1*1 M 20 ¿0 |S IH ¡g *,T 4 -

BBC OS 0,9 4A

Abstract: 07380 bbc os 0.9 4A
Contextual Info: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.

ic 301

Abstract: 2SD1535
Contextual Info: Power Transistors 2SD1535 b132fl52 001b7Sa MbO 2S D 1535 Package D im ensions Unit ; mm Silicon NPN Triple Diffused Planar Darlington Type High Power A m plifier • Features • • • • Very good linearity o f DC current gain Iiff High collector-base voltage (VCbo)

2SB0942

Abstract: 2SB0942A 2SD1267 2SD1267A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc

2sc1846

Abstract: 2SA0885
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SC4212

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4212 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver Unit: mm 8.0+0.5 –0.1 3.2±0.2 M Di ain sc te on na tin nc ue e/ d • Features ■ Absolute Maximum Ratings Ta = 25°C

2SB0946

Abstract: 2SD1271
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB1299

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SB0944

Abstract: 2SD1269
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

STA400

Abstract: STA475A STA47
Contextual Info: STA475A NPN Darlington External dimensions D With built-in avalanche diode Absolute maximum ratings Ta=25°C Specification min typ max Ratings Unit Symbol VCBO 100±15 V ICBO VCEO 100±15 V IEBO VEBO 6 V VCEO 85 IC 2 A hFE 2000 ICP 4 (PW≤1ms, Du≤25%)

3052p

Abstract: 3122P 3242p si-3242p 3152P SI-3122P SI-3052P SI-3152P SI3242P 2a86
Contextual Info: ●SI-3000P Series SI-3000P Series 3-Terminal, Dropper Type •Features • • • • TO-3P package 3-terminal regulator Output current: 2.0A Wide range of DC input voltage Built-in foldback overcurrent protection circuit ■Applications • For stabilization of the secondary stage of switching power supplies

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching 5.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 150 V Collector-emitter voltage (Base open)

66382

Abstract: CSC4212
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR CSC4212 TO-126 Plastic Package EC B For Colour TV Horizontal Deflection Driver ABSOLUTE MAXIMUM RATINGS Tc=25ºC DESCRIPTION

m6g45

Contextual Info: TO SH IBA SM6G45,SM6J45,SM6G45A,SM6J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45, SM6J45, SM6G45A, SM6J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vd r m = 400, 600V R.M.S On-State Current : It RMS —6A

Contextual Info: TO SH IBA SM8G45,SM8J45,SM8G45A,SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : V d r m = 400, 600V R.M.S On-State Current : It RMS —8A

KTB688B

Abstract: KTD718
Contextual Info: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25

KTD998

Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Contextual Info: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃

3050J

Contextual Info: 1-1-1 Linear Regulator IC SI-3000J Series 5-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A • Low dropout voltage: VDIF ≤ 1V (at IO=2.0A)

12v diode 10A

Contextual Info: 1-1-1 Linear Regulator IC SI-3001N Series 3-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 1.5A Symbol SI-3241N 35 45 Unit

SI-3122N

Contextual Info: 1-1-1 Linear Regulator IC SI-3002N Series 3-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A Symbol SI-3122N/3152N 30

STR20005

Abstract: STR20000 Series RU3M STR20000 sanken str 45
Contextual Info: STR20000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 4 external components Small size and high efficiency Low switching noise Variable output voltage Use of Sanken semiconductors components ensures high reliability

STR2012

Abstract: STR2005 STR2024 Sanken str2012 STR2013 str2000 series sanken STR2005 STR2000 Sanken str2015
Contextual Info: STR2000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 3 external components Small size and high efficiency Low switching noise Variable output voltage Use of SANKEN's semiconductor elements ensures high reliability

Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0948 (2SB948), 2SB0948A (2SB948A) Silicon PNP epitaxial planar type For low-voltage switching 16.7±0.3 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching