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Panasonic Electronic Components 2SD1267AP TRANS NPN 80V 4A TO-220F-A1
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2SD1267A Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD1267A	Panasonic	Silicon NPN triple diffusion planar type	Original	PDF
2SD1267A	Panasonic	NPN Transistor	Original	PDF
2SD1267A	Panasonic	Silicon NPN triple diffusion planar type	Original	PDF
2SD1267A	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD1267A	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1267A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD1267A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD1267A	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1267A	Unknown	Cross Reference Datasheet	Scan	PDF
2SD1267A	Panasonic	Silicon Medium Power Transistors	Scan	PDF
2SD1267AP	Panasonic	Silicon NPN Triple Diffusion Planar Type Power Transistor	Original	PDF
2SD1267AQ	Panasonic	Silicon NPN Triple Diffusion Planar Type Power Transistor	Original	PDF
2SD1267AR	Panasonic	Silicon NPN Triple Diffusion Planar Type Power Transistor	Original	PDF

2SD1267A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SB0942 Abstract: 2SB0942A 2SD1267 2SD1267A Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc	Original	2002/95/EC) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 O-220F-A1 2SB0942A 2SD1267 2SD1267A	PDF
2SD1267 Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290	OCR Scan	2SD1267 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1279 SC-62 2SD1280 2SD1267 2SD1267A 2SD1271 2SD1273 2SD1273A 2SD1274	PDF
2SB942 Abstract: 2SB942A 2SD1267 2SD1267A Contextual Info: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SD1267 base voltage 2SD1267A Collector to 2SD1267 Ratings	Original	2SD1267, 2SD1267A 2SB942 2SB942A 2SD1267 150mA 2SB942A 2SD1267 2SD1267A	PDF
Contextual Info: 2SD1267AP Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4	Original	2SD1267AP Freq20MÃ	PDF
Contextual Info: Power T ransistors 2SD1267, 2SD1267A 2SD1267, 2SD1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U n it ! m m 4 .4 m a x . • Features 2.9max. • High DC current gain hFE and good linearity	OCR Scan	2SD1267, 2SD1267A 2SB942, 2SB942A 2SD1267	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity	Original	2002/95/EC) 2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267, 2SD1267A 2SB0942 2SB0942A	PDF
SC671 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm Parameter Collector-base voltage 2SD1267 (Emitter open)	Original	2002/95/EC) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 2SD1267A SC671	PDF
2SD1267 Abstract: 2SD1267A Contextual Info: Inchange Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SB942/942A	Original	2SD1267 2SD1267A O-220Fa 2SB942/942A O-220Fa) 2SD1267 2SD1267A	PDF
2SD1267A Abstract: 2SB0942 2SB0942A 2SD1267 Contextual Info: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 and 2SB0942A Parameter Collector to base voltage 2SD1267 Collector to emitter voltage 2SD1267 Symbol Rating Unit VCBO 60 V 16.7±0.3	Original	2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 2SD1267A 2SB0942A 2SD1267	PDF
2SB0942 Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 10.0±0.2 4.2±0.2 M Di ain sc te	Original	2002/95/EC) 2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A	PDF
2SB942 Abstract: 2SB942A 2SD1267 2SD1267A Contextual Info: Power Transistors 2SB942, 2SB942A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SB942 base voltage 2SB942A Collector to 2SB942 Ratings	Original	2SB942, 2SB942A 2SD1267 2SD1267A 2SB942 100mA 2SB942 2SB942A 2SD1267A	PDF
2SD1267A Abstract: 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267 Contextual Info: Power Transistors 2SB0942 2SB942 , 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • Large collector-emitter saturation voltage VCE(sat)	Original	2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267, 2SD1267A 2SD1267A 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267	PDF
Contextual Info: 2SD1267A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4	Original	2SD1267A Freq20MÃ	PDF
Contextual Info: 2SD1267AQ Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4	Original	2SD1267AQ Freq20MÃ	PDF

2SB0942 Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A Contextual Info: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 2SB942 and 2SB0942A (2SB942A) Unit: mm • Features Parameter (TC=25˚C) Symbol Collector to 2SD1267 base voltage 2SD1267A Collector to	Original	2SD1267, 2SD1267A 2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A	PDF
2SB0942 Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 10.0±0.2 4.2±0.2 M Di ain sc te	Original	2002/95/EC) 2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A	PDF
2SD1267 Abstract: 2SD1267A Contextual Info: SavantIC Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A	Original	2SD1267 2SD1267A O-220Fa 2SB942/942A 2SD1267 2SD1267A	PDF
J300B Abstract: 2SB942 2SB942A 2SD12 2SD1267 2SD1267A 400Collector Contextual Info: Pow er Tra n sisto rs 2SD1267, 2SD1267A 2SD1267, 2SD 1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U nit ! mm 4.4m ax. • Features 2 .9 m a x . • H igh D C cu r re n t ga in I i f e	OCR Scan	2SD1267, 2SD1267A 2SB942, 2SB942A 2SD1267 J300B 2SB942 2SB942A 2SD12 2SD1267A 400Collector	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm Parameter Collector-base voltage 2SD1267 (Emitter open)	Original	2002/95/EC) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 2SD1267A	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity	Original	2002/95/EC) 2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267, 2SD1267A 2SB0942 2SB0942A	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 (Emitter open) 2SD1267A Unit VCBO 60	Original	2002/95/EC) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 2SD1267A	PDF
2SB0942 Abstract: 2SB0942A 2SD1267 2SD1267A Contextual Info: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm Parameter Collector-base voltage 2SD1267 Emitter open 2SD1267A Symbol Rating Unit VCBO 60 V Collector-emitter voltage 2SD1267	Original	2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 2SB0942A 2SD1267 2SD1267A	PDF
2SB0942 Abstract: 2SB0942A 2SD1267 2SD1267A Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc	Original	2002/95/EC) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 O-220F-A1 2SB0942A 2SD1267 2SD1267A	PDF
Contextual Info: 2SD1267AR Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4	Original	2SD1267AR Freq20MÃ	PDF

2SD1267A Search Results

2SD1267A Price and Stock

Panasonic Electronic Components 2SD1267AP

2SD1267A Datasheets (13)

2SD1267A Datasheets Context Search

2SB0942

2SD1267

2SB942

SC671

2SD1267

2SD1267A

2SB0942

2SB942

2SD1267A

2SB0942

2SB0942

2SD1267

J300B

2SB0942

2SB0942