100X2. Search Results

c1027 transistor

Abstract: transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

7MBP100TEA060

Abstract: AC200V AC2500 HCPL4504 TLP521 PC125 Series fuji igbt transistor modules all type of fuji igbt transistor module
Contextual Info: １．Package Outline Drawings a Package type : P622 Fuji Electric Co.,Ltd. DWG.NO. . Dimensions in mm MS6M0601 a 3/23 H04-004-03 ２．Pin Descriptions Main circuit Symbol Description P Positive input supply voltage. U Output U . V Output (V). W Output (W).

transistor c1027

Abstract: C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted

C1232

Abstract: transistor C123
Contextual Info: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold

C1029

Contextual Info: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage

Contextual Info: SPECIFICATION Device Name ： ＩＧＢＴ−ＩＰＭ Type Name ： ６ＭＢＰ１００ＲＴＢ０６０ Spec. No. ： ＭＳ６Ｍ０６５４ Fuji Electric Co.,Ltd. Matsumoto Factory DATE - - CHECKED - - CHECKED - - NAME APPROVED DWG.NO. DRAWN MS6M0654

C1209

Contextual Info: ISO 9001 Registered Process C1209 1.2µm EECMOS Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold

C1232

Abstract: cox 15um
Contextual Info: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold

ipm application note fuji

Abstract: 6MBP100TEA060 AC200V AC2500 HCPL4504 TLP521 IGBT saturation fault
Contextual Info: １．Package Outline Drawings a Package type : P622 Fuji Electric Co.,Ltd. DWG.NO. . Dimensions in mm MS6M0702 a 3/22 H04-004-03 ２．Pin Descriptions Main circuit Symbol Description P Positive input supply voltage. U Output U . V Output (V). W Output (W).

6MBP100RTB060

Abstract: AC200V AC2500 HCPL4504 P610 P611 all type of fuji igbt transistor module fuji ipm ipm application note fuji
Contextual Info: b １．Package Outline Drawings Package type : P611 1 0 9 ±1 9 5 ±0.3 1 3 . 8 ±0.3 67.4 1 0 . 1 6 ±0.2 1 0 . 1 6±0.2 1 0 . 1 6±0.2 1 5 . 2 4 ±0.25 3 . 2 2 ±0.3 2 ±0.3 5 . 0 8±0.15 5 . 0 8±0.15 5 . 0 8±0.15 1 4 7 4-φ 5 . 5 2 . 5 4 ±0.1 10 16

DIN-46228

Abstract: swg copper wire 25 32 DIN46228 copper wire s.w.g 22 PIDG Faston 6,3 x 0,8 001300080 calibration of crimping tool 48801 BS4579 sWG 24 copper wire
Contextual Info: 1429 Technical portal and online community for Design Engineers - www.element-14.com Connectors - Crimp Terminals Bootlace Ferrules . . . . . . . . . . . . . . . . . . . . . . . . . . Heat Shrink Terminals . . . . . . . . . . . . . . . . . . . . . . High Current Insulated Crimp Terminals . . . . .

C1029

Contextual Info: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage

P621

Abstract: IC P621 p621 b 18 p621 P621 capacitor 6MBP100RTJ060 AC200V AC2500 HCPL4504 P610
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP100RTJ060 Spec. No. : MS6M 0675 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 29 ‘0 3 N.Matsuda Jan. 29 ‘0 3 Nishiura Jan.-29 -‘0 3 K.Yamada T.Fujihira MS6M 0675 a 1 22 H04-004-07 Revised Records

dinverter 768r

Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

100A 600V IGBT INVERTER CIRCUIT

Contextual Info: SPECIFICATION Device Name ： ＩＧＢＴ−ＩＰＭ Type Name ： ７ＭＢＰ１００ＲＴＢ０６０ Spec. No. ： ＭＳ６Ｍ０６５５ Fuji Electric Co.,Ltd. Matsumoto Factory DATE - - CHECKED - - CHECKED - - NAME APPROVED DWG.NO. DRAWN MS6M0655

P621

Abstract: P621 capacitor fuji ipm ic or 4071 datasheet igbt driver A 4504 AC200V AC2500 P610 P611 7MBP100RTJ060
Contextual Info: １．Package Outline Drawings 13.8 109 ±1 95 ±0.3 66.44 ±0.3 1 0 ±0.2 3 . 2 2 ±0.3 ±0.15 ±0.2 6 ±0.15 1 0 ±0.2 1 2 ±0.25 6 ±0.15 4-φ5.5 2 ±0.1 2 ±0.3 6 10 ±0.3 P 20 10 74 88 ±1 20 B N V U 0.5 17 W 0.5 24 26 26 19-□0.5 2-φ2.5 9 +0.6 3 1 -0.3

in5388

Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor

c1027 transistor

Abstract: transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027
Contextual Info: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted

C1219

Contextual Info: ISO 9001 Registered Process C1219 CMOS 1.2µm EEPROM Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold Symbol VTN γN

C1029

Contextual Info: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage

c1028 transistor

Abstract: c1028
Contextual Info: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor

RH 3.5x9.0x0.8

Contextual Info: SYNTON-TECH 9 FERRITE BEAD RH TYPE EEBHSMk Shielding sig n a l noise suppression, and transient frequency damping lor E G A cards, V G A cards. P C boards, TV gam es and more. RH 3.5X6.DX0.B T T_ Taping Shape Core Dimensions Core Type Noter S: Single T: Taping

C1232

Abstract: cox 15um cmos transistor 0.35 um
Contextual Info: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold