GERMANIUM Search Results

2N3147

Abstract: 2N3146 Texas Germanium Germanium power
Contextual Info: TYPES 2N3146, 2N3147 P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS S 5 £m HIGH-VOLTAGE HIGH-POWER TRANSISTORS for w V» z M Z z P ft z “ MILITARY AND INDUSTRIAL APPLICATIONS m ech a n ica l d a ta S » I- These tran sistors a re in precisio n w e ld e d , h e rm e tic a lly s e a le d en closures. The m ounting b a s e p ro v id e s an

2N404

Abstract: MPS404 2n404a a5t404
Contextual Info: TYPES A5T404, A5T404A, A8T404, A8T404A P-N-P SILICON TRANSISTORS _B U L L E T I N N O . O L -S 7 3 1 1 9 7 9 , M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-COST REPLACEMENT OF GERMANIUM 2N404, 2N404A • A5T404, A5T404A Have Standard TO-18 100-mil Pin-Circle Configuration

MT3S111TU

Contextual Info: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05

MT3S113

Abstract: transistor 2F to-236 4360A
Contextual Info: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8240T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8240T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the

726-BGA622H6820

Abstract: marking BXs SOT343 lna Germanium power
Contextual Info: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,

Buffer Amplifier Ghz

Abstract: THM2004J
Contextual Info: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,

GSM 900, 1800, 1900 max power diagram

Abstract: TST0911 TST0911-TSQ TST0911-TSS PSSOP28 pcs cellular power amplifier 1900 mhz gsm amplifier atmel 935
Contextual Info: TST0911 Dualband SiGe Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based

ATMEL 935

Abstract: SMD 6 PIN IC VCC GND TST0912 TST0912-TJQ TST0912-TJS
Contextual Info: TST0912 SiGe Power Amplifier for GSM 900 Description The TST0912 is a monolithic integrated power amplifier IC. The device is manufactured using Atmel Wireless & Microcontrollers’ Silicon-Germanium SiGe technology and has been designed for use in GSM 900-MHz mobile phones.

Contextual Info: Temic TST0911 S e m i c o n d u c t o r s Dualband SiGe-Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using TEMIC Semiconductors’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based

Contextual Info: Temic TST0922 S e m i c o n d u c t o r s SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium

SGC-4486Z

Abstract: sgc- sot-86
Contextual Info: SGC-4486Z SGC-4486Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features RFMD’s SGC-4486Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

4463Z

Abstract: SGC-4463Z
Contextual Info: SGC-4463Z SGC-4463Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGC-4463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

AZ100EP16VS

Abstract: AZ100EP16VST AZ10EP16VS AZ10EP16VST MC100EP16VS NC 1350
Contextual Info: ARIZONA MICROTEK, INC. AZ10EP16VS AZ100EP16VS ECL/PECL Differential Receiver with Variable Output Swing FEATURES • • • • • Silicon-Germanium for High Speed Operation 150ps Typical Propagation Delay AZ100EP16VS Functionally Equivalent to ON Semiconductor MC100EP16VS

1900mhz

Abstract: CL10B103KBNC LL1608-FS27NJ SGL-0263
Contextual Info: SGL-0263 Z SGL-0263(Z) 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features

rohm mch

Abstract: ECB-100607 SGA-6589 SGA-6586 Germanium Amplifier w061 PA DRIVER AMPLIFIER SGA6589 AN012 EAN-101613
Contextual Info: DESIGN APPLICATION NOTE - AN012 SGA-6589 Wideband 50-1000 MHz Driver Circuit Abstract New Silicon / Germanium amplifier gain blocks exhibit a combination of wide bandwidth, high gain,IP3 and low noise figure. The SGA6589 is a medium power gain block for which a versatile,

4363Z

Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER SGC-4363Z
Contextual Info: SGC-4363Z SGC-4363Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGC-4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

sot86

Abstract: SGC-2486Z GaN hemt D7628
Contextual Info: SGC-2486Z SGC-2486Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT86 Product Description Features RFMD’s SGC-2486Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

SGL-0363Z

Abstract: SGL0363Z IrL 1540 N l03z
Contextual Info: SGL-0363Z SGL-0363Z 5MHz to 2000MHz Low Noise Amplifier Silicon Germanium 5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGL-0363Z is a low power, low noise amplifier. It is designed for

SGC6489Z

Abstract: SGC-6489
Contextual Info: SGC-6489Z SGC-6489Z 50MHz to 3500MHz Silicon Germanium Active Bias Gain Block 50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK Package: SOT-89 Product Description Features RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias

SGA-1263

Abstract: SGA-1263Z BY 356
Contextual Info: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

IF transformer

Abstract: C0603COG500-101JNE ADT1-6T SRF-2016 SRF-1016 C0603COG500220JNE "IF transformer"
Contextual Info: SRF-2016 Z SRF-2016(Z) 200MHz to 600MHz Silicon Germanium IF Receiver 200MHz to 600MHz SILICON GERMANIUM IF RECEIVER RoHS Compliant and Pb-Free Product (Z Part Number) Package: TSSOP, 16-Pin, 5.0mmx6.4mmx1.0mm Product Description Features RFMD’s SRF-2016 is a quadrature demodulator RFIC designed for UHF

applications of ujt with circuits

Abstract: UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492
Contextual Info: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR Specifications S IÚCON TYPES I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ N ” type negative resistance characteristic over a wide tem perature range. A stable peak point

1N48 diode

Abstract: diode in34a IN34A DIODE 1N54 1N34 DIODE diode 1n34 1N34 1N48 1N38A 1Ns4
Contextual Info: CRIMSON S EMICONDUCTOR INC ' TT 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 4 9 D » e | 2514EHL. □ 0 0 0 34 e] □ INC 7"' O / - o 7 t GERMANIUM DIODE TYPE PEAK REVERSE V O LTAG E AVERAGE F.ORW ARD CURRENT M IN IM U M FO R W A R D CURRENT A T 1 VO LT M A X IM U M