100X2MM Search Results

Contextual Info: Power T ransistors 2SB1156 2SB1156 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD 1707 • Features • Low collector-eimitter saturation voltage VcEtsao • Good linearity of DC current gain (hFE) • High collector current (Ic)

LHi 878

Abstract: 2SD1169 2SD1168 2SD1171 10raA PCT-A11 IB07
Contextual Info: P A N A S O N I C INDL/ELEK-CSEnil b^aflSM 7EC D DQCH51D □ | 2SD1168 2 SD 1 1 6 8 T- 3 3 - '> ij =3 > NPN H fiÌÉ i& ./lfìfé /S i NPN Triple Diffused Mesa 7- -f "j •?• > i f ^ =¥ a. U —2 /S w itc h in g Regulator U n it : ir 39 .0 ± 0 .5 • ¥f

251C

Abstract: 2SB1372 2SD2065
Contextual Info: P o w e r T ra n s is to rs — 2SD2065 b q 3 2 flS4 o o n a s M PAN ASO NIC mi m p n c b INDL/ELEK SEM I 2SD2065 bT E D Silicon T rip le -D iffu se d P lanar Type Package Dim ensions High Pow er Am plifier Com plem entary Pair with 2SB1372 U n it ^ mm 5.2m ax.

2SD1510

Abstract: 743p 44max
Contextual Info: Power Transistors 2SD1510 2SD1510 Silicon PNP Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier U n it r m m 4 .4 m a x . • Features • High DC cu rren t gain hra 2.9max • High speed switching • “Full P ack” package for simplified m ounting on a h eat sink with one

Contextual Info: Power Transistors 2SC3972, 2SC3972Á 2SC3972, 2SC3972A Silicon NPN Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching U nit ! mm • Features • High' speed switching • High collector-base voltage 4.4max. 10.2max.

2SB947

Abstract: 2SB947A
Contextual Info: Power T ransistors 2SB947, 2SB947A 2SB 947, 2S B 947A Silicon PNP Epitaxial Planar Type P ackage Dim ensions Low Voltage Switching • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e VcEcsao • H igh s p e e d sw itch in g • “F ull P a c k ” p ack ag e fo r sim plified m o u n tin g on a h e a t sink w ith one

2SD1457

Abstract: 2SD1457A
Contextual Info: P o w e r T ra n s is to rs 2SD1457, 2SD1457A 2SD1457, 2S D 1457A Silicon NPN Triple-Diffused Planar Darlington Type Package D im ensions Power A m plifier Unit ! mm 5.2 max. ' V3.2 15.5m ax. . 6.9m in, • Features • High DC current gain 1iFe • High collector-base voltage (V cbo)

2SD1663

Contextual Info: Pow er Tra n sisto rs 2 SD1663 2S D 1663 Silicon N P N Trip le-D iffu sed Ju n ctio n M esa Type P ackage D im ensions P ow e r S w itch ing • Fe a tu re s • H igh b re a k d o w n v o ltag e and high reliab ility by a g la ss p assiv atio n • H igh s p e e d sw itch in g

2SD1173

Abstract: 2SD1172 2SD1174
Contextual Info: PANASONIC I N D L / E L E K - C S E M I} 72C I>J j bJ13Sfl5M □DQ'JSlt, 1 "T -33-11 2SD1172 v ’ 3 U =1 > NPN M • i# NPN Triple Diffused Junction Mesa [°J HJ il ffl/Line-O perated Horizontal Deflection Output Unit r mm 39.0 ± 0 .5 ^ [/F e a tu re s

Contextual Info: SILICON PN P EPITAXIAL T Y P E PC T P R O C ESS 2 S A 1 1 2 INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SWITCHING APPLICATIONS. lCLSM AX^ 0 3 . 6 ± d Z • Low Collector Saturation Voltage • • High Speed Switching Time : tstg = 1 .0 //s (Typ.)

2SD1273

Abstract: 2SB1299 B13 transistors
Contextual Info: 2SB1299 Power Transistors 2SB1299 Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Am plifier C om plem entary Pair with 2 S D 1 2 7 3 . Unit : i 4 4max. max. 5.7max. 10.2 • Features 2.9m«x • High DC current gain K f e • Good linearity of DC current gain (I i f e )

2SB943

Abstract: 2SD1268 2SB941 P p 181 V
Contextual Info: Power Transistors 2SB943 2SB943 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD 1268 • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e VcE<sao • G ood lin e a rity of D C c u r r e n t gain (Iife )

800V PNP

Abstract: 2SC3507 2SC3577
Contextual Info: Power Transistors 2SG3577 bR3SaSE OOlbMSl 3b3 2SC3577 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • • • • High speed switching High collector-base voltage Vcbo Good linearity of DC current gain (Iife)

Contextual Info: Power Transistors 2S D 17 3 0 2SD1730 Silicon PNP Triple-Diffused Planar Type Package Dim ensions H orizontal Deflection Output 15:5max. • Features 13.5max. • Damper diode built-in ll.Omax. • Minimizes external component counts and simplifies circuitry

Contextual Info: Power T ransistors 2SC3527 2SC3527 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features Unit I ' m 5.2max. 15,5max6.9min. • High speed switching 3.2- • High collector-base voltage Vcbo Epoxy

SF5D41

Abstract: SF5B41 SF5B sf5g41 TOSHIBA THYRISTOR
Contextual Info: THYRISTOR S F 5 B ,D ,G ,J 4 1 SILICON DIFFUSED TYPE Unit in mm MLDIUM POWER CONTROL APPLICATIONS. 03.6ÍO.Z lQ SMAX^ FEA T U R E S : . Repetitive Peak Off-State Voltage V DRM Repetitive Peak Reverse Voltage Vr r m ¿IT I = 1 0 0 ~ 600V CO . Average On-State Current

2SC3796

Abstract: 2SC3796A SC-65
Contextual Info: Power Transistors 2SC3796, 2SC3796A 2SC3796, 2SC3796A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features O +1 . • High, speed switching • • High collector-base voltage VCBo • Low collector-emitter saturation voltage (Vce tsa«)

2SD601

Abstract: 2SD389 2SD601 R 2SB709 2SD601A 2SB709A 2SD389A 2SB709 Q 2SD601 Q
Contextual Info: PANASONIC INDL/ELEK-CSENI} 7SC D | h =132854 □ □ □ C]3£D 4 |~” 7% jj-// 2SD389, 2SD389A 2SD389, 2 S D 3 8 9 A '> 'J u > N P N .X -y~M/Si N P N Diffused Junction Mesa 4 ltti^ W i)liltliffl/M e d iu m Power Amplifier Unit : mm 10.5 ± 0 .5 • ^ •