1015 TRANSISTOR DATASHEET Search Results

EPC Gan transistor 1015

Abstract: EPC Gan transistor EPC1015 MARKING code VG
Contextual Info: EPC1015 DATASHEET EPC1015 – Enhancement Mode Power Transistor VDSS – 40 V RDS on – 4 mW ID – 33 A EFFICIENT POWER CONVERSION Preliminary information subject to change without notice Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the

EPC Gan transistor 1015

Abstract: EPC1015 EPC Gan transistor
Contextual Info: DATASHEET EPC1015 EPC1015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: DATASHEET EPC1015 EPC1015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

5004 bridge rectifier

Contextual Info: DATA SHEET 2044 REV. C SENSITRON SEMICONDUCTOR S-100 SCREENING PROCEDURE All parts procured with S-100 Screening shall be 100% screened in accordance with one of the three following procedures, as applicable. All testing is performed at room temperature. For testing at high and low temperatures,

geiger apd

Abstract: SPMMicro3035x13 geiger tube Geiger photomultiplier SPMMicro1020X13 SPMMicro6035X13 helium gas sensor module PDF PIN APD DIODE DESCRIPTION pulse metal detector
Contextual Info: SPMMicro Series High Gain APD SPMMicro detectors come in a variety of pin package formats Overview according to footprint requirements, levels of hermeticity, and cooling. These include glass/metal sealed transistor header package types TO46, TO5, TO8 and ceramic packages (TO5

Contextual Info: HS-245RH n n RADIATION HARDENED TRIPLE LINE TRANSMITTER C l3 HS-246RH, HS-249RH n V u T t^ Î RADIATION HARDENED TRIPLE LINE RECEIVERS HS-248RH December 1992 RADIATION HARDENED TRIPLE PARTY-LINE RECEIVER Pinouts Features • Radiation Hardened Dl Processing

TOP247 equivalent

Abstract: TOP247 an 7591 power amp sharp pin flyback transformer schematics atx flyback transformer Yageo cfr EER28L TNY266 EE16 transformer atx MP1305P-4AS
Contextual Info: Engineering Prototype Report for EP-12 145 W PC Forward Converter with TOP247 and 10 W 5 V Output Standby Flyback with TNY266 Title Specification Application PC Main and PC Standby Author PI Applications Document Number EPR-12 Date 01-Feb-05 Revision 1.3 Objective

MAT03-903H

Abstract: "Dual PNP Transistor" MAT03-903L GDFP1-F10 "PNP Transistor" Dual PNP Transistor MAT03 903h
Contextual Info: Tuesday, Feb 26, 2008 3:48 PM / Low noise, matched, dual PNP transistor MAT03 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.

GDFP1-F10

Abstract: MAT03
Contextual Info: Tuesday, Feb 26, 2008 3:48 PM / Low noise, matched, dual PNP transistor MAT03 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.

geiger tube

Abstract: Geiger geiger apd pulse metal detector A0803 helium gas sensor module TO8 package photomultiplier SPMMicro3035x13 pmt amplifier circuit
Contextual Info: SPMMicro Series High Gain APD Overview cell in the SPM are varied for PDE optimization and optimal dynamic range. SPMMicro detectors come in a variety of pin package formats according to footprint requirements, levels of hermeticity, and cooling. These include glass/metal sealed transistor header package types

MAT02-903H

Abstract: MAT02-913H MAT02 mat-02
Contextual Info: Friday, Mar 7, 2008 9:07 AM / Low-noise, matched dual monolithic transistor MAT02 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.

Contextual Info: Thursday, May 8, 2008 3:43 PM / Low-noise, matched dual monolithic transistor MAT02 1.0 SCOPE This specification documents the detail requirements for space qualified product manufactured on Analog Devices, Inc.'s QML certified line per MIL-PRF-38535 Level V except as modified herein.

IGBT cross reference

Abstract: AN9007 diode rectifier ebr IGBT SCHEMATIC IGBT tail time AN-9007 PP339 IGBT 2000 failure analysis IGBT IGBT failure
Contextual Info: July, 2000 AN9007 High Performance 1200V PT IGBT with Improved Short-Circuit Immunity Chongman Yun, Sooseong Kim, Youngdae Kwon and Taehoon Kim Fairchild Semiconductor 82-3 Dodang-Dong, Wonmi-Ku, Buchon, Kyunggi-Do, KOREA Phone +82-32-680- 1325, Fax)+82-32-680- 1823, E-mail)cmyun@Fairchildsemi.co.kr

TDA4605-3

Abstract: TDA 4605-3 tda4605 smps circuit diagrams IC TDA 2002 tda4605 application note TDA4605 Q67000-A5066 tda smps TDA4605 SMPS v3h diode
Contextual Info: Datasheet, V2.0, 1 Jul 2002 PWM-QR IC TDA4605-3 Control IC for Switched-Mode Power Supplies using MOS-Transistors Power Management & Supply N e v e r s t o p t h i n k i n g . TDA4605-3 Revision History: 2002-07-01 Datasheet Previous Version: Page Subjects major changes since last revision

tda4605 smps circuit diagrams

Abstract: IC TDA 2002 tda4605 TDA4605-2 tda4605 application note SMPS CIRCUIT DIAGRAM USING TRANSISTORS 4605 Q67000-A5020 free IC TDA 2002 tda 83
Contextual Info: Datasheet, V2.0, 1 Jul 2002 PWM-QR IC TDA4605-2 Control IC for Switched-Mode Power Supplies using MOS-Transistors Power Management & Supply N e v e r s t o p t h i n k i n g . TDA4605-2 Revision History: 2002-07-01 Datasheet Previous Version: Page Subjects major changes since last revision

Contextual Info: Hardware Documentation D at a S h e e t HAL 1821.HAL 1823 Linear Hall-Effect Sensor Family in TO92UA Package Edition July 17, 2013 DSH000157_002EN HAL1821.HAL1823 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document

HAL182X

Contextual Info: Hardware Documentation D at a S h e e t HAL 1821.HAL 1823 Linear Hall-Effect Sensor Family in TO92UA Package Edition Dec. 6, 2013 DSH000157_003EN HAL1821.HAL1823 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document

Device Test

Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
Contextual Info: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance

R1A SURFACE MOUNT TRANSISTOR

Abstract: transistor R1A SOT-23-5 R1A voltage regulator sot 223 AN-41 LP2980 MIC5205 TC1070 TC1071 TCN4041
Contextual Info: USING TELCOM'S MICROPOWER LDOs APPLICATION NOTE 41 USING TELCOM'S MICROPOWER LDOs By Paul Paglia AN-41 INTRODUCTION TelCom Semiconductor, Inc.’s family of micropower LDOs utilize low-voltage CMOS process technology. These LDOs provide similar ripple rejection and dropout characteristics as their bipolar equivalents, but are significantly more

AN765

Abstract: LP2980 MIC5205 TC1070 TC1071 X5050
Contextual Info: AN765 Using Microchip's Micropower LDOs Author: Paul Paglia, Microchip Technology, Inc. VIN CIN 1µF – INTRODUCTION Microchip Technology, Inc.’s family of micropower LDOs utilizes low-voltage CMOS process technology. These LDOs provide similar ripple rejection and dropout characteristics as their bipolar

TTL IC 7405 open collector

Abstract: HS-245RH
Contextual Info: HS-245RH fc J jQ k ¡ ¡ D E D IA S RADIATION HARDENED TRIPLE LINE TRANSMITTER HS-246RH, HS-249RH RADIATION HARDENED TRIPLE LINE RECEIVERS HS-248RH December 1992 RADIATION HARDENED TRIPLE PARTY-LINE RECEIVER Features Pinouts • Radiation Hardened Dl Processing

RVH MSOP8

Abstract: TC1014 AN41 TC1070 AN41 LP2980 MIC5205 TC1070 TC1071 Microchip MSOP8
Contextual Info: AN41 Using Microchip’s Micropower LDOs Author: Paul Paglia, Microchip Technology, Inc. VIN + CIN 1µF – INTRODUCTION Microchip Technology, Inc.’s family of micropower LDOs utilizes low-voltage CMOS process technology. These LDOs provide similar ripple rejection and dropout characteristics as their bipolar

AN765

Contextual Info: AN765 Using Microchip's Micropower LDOs Author: Paul Paglia, Microchip Technology, Inc. VIN CIN 1µF – INTRODUCTION Microchip Technology, Inc.’s family of micropower LDOs utilizes low-voltage CMOS process technology. These LDOs provide similar ripple rejection and dropout characteristics as their bipolar

VARIABLE POWER SUPPLY. 0 - 30V, LM723

Abstract: LM741 audio amplifiers IC LM741 timer circuit diagram lm35 sensor interfacing with adc0808 diagram LM338 TO-3 spice model LM741 AND LM386 Audio Amplifier lm1485 LM1084 spice LF351 op-amp audio equalizer smd code marking 162 sot23-5
Contextual Info: Welcome to National Semiconductor’s Summer 2000 Edition of the Linear/Mixed-Signal Designer’s Guide! Included in this guide are: • • • • • Alphanumeric index Product selection trees Product selection guides Package descriptions CD-ROM with complete datasheets, a pdf version of this guide, and other valuable information