1017 MOSFET Search Results

ac control using ir2110 and mosfet

Abstract: IR2110 APPLICATION CIRCUIT FOR INVERTERS IR2110 driver CIRCUIT FOR INVERTERS 5V power supply using bridge rectifier circuit of 5v from 220 ac without transformer IR2110 equivalent single phase fully controlled rectifier with rl a coupler MOSFET DRIVER application note bridge rectifier single phase 240V AC PVI1050N
Contextual Info: Application Note AN-1017 The PVI - a New Versatile Circuit Element Table of Contents Page The Function Mechanical Specifications .2

KCP1017

Contextual Info: PRODUCT SPECIFICATION DATE：01/14/2005 cosmo SOLID STATE RELAY - MOSFET OUTPUT KCP1017 ELECTRONICS CORPORATION 62M00018 REV. 2 SHEET 1 OF 7 z OUTSIDE DIMENSION︰ 1017 XXX 4.40 Date Code 2.30 0.05 +0 -0.05 4.70 0.40 2.35Max. 0.50±0.3 6.8±0.4 2.54 Unit︰mm

Contextual Info: PRODUCT SPECIFICATION DATE 05/02/2011 SOLID STATE RELAY - MOSFET OUTPUT NO.62M00018 REV. cosmo KCP1017 ELECTRONICS CORPORATION 3 SHEET 1 OF 7 OUTSIDE DIMENSION cosmo 1017 XXX 4.40 Date Code 6.8±0.4 0.40 2.35Max. 0.50±0.3 0.05 2.30 0.254 4.60 Unit mm Tolerance

COSMO1017

Abstract: 1017 mosfet KCP1017
Contextual Info: cosmo High Voltage, Solid State Relay-MOSFET Output KCP1017 UL 1577/ UL 508 File No.E108430 , Fl EN60950 (File No.FI13698) Features KCP1017 1. Normally Open, Single Pole Single Throw 2. Control 60V AC or DC Voltage o 3. Switch 130mA Loads cosmo 1017 O xxx-

NTC BD-11

Abstract: SI2333DS LT3480 LTC4099 NTLJS4114N
Contextual Info: LTC4099 Provides Unprecedented Control of USB Power Management and Battery Charger Functions Using I2C Design Note 1017 George H. Barbehenn Introduction The LTC 4099 high efficiency USB power manager and Li-Ion/Polymer battery charger seamlessly manages

k1507

Abstract: K1507 MOSFET transistor k1507 transistor cs 9013 Transistor 9013 AP3843GM k-1507 k1507 TRANSISTOR AZ3843 transformer ei28
Contextual Info: Application Note 1017 The Introduction to Green Mode PWM Controller AP384XG Prepared by Lv Shuzhuang System Engineering Department 1. Introduction CS pin 3 In normal operation mode, the input pin receives a voltage proportional to inductor current, and the PWM uses this information to terminate the output

bf999

Abstract: For high-frequency stages up to 300 MHz triode sot23 sot-23 MARKING GU
Contextual Info: SIEMENS Silicon N Channel MOSFET Triode BF 999 • For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 BF 999 LB Q62702-F1132 G D Package1) S SOT-23 Maximum Ratings Parameter

mosfet motor dc 48v

Abstract: 12v dc motor variable speed control circuit motor dc fan 48v mosfet for dc to ac inverter 24V DC motor speed control zxmhc3f381n8 24V DC motor for 24v pwm mosfet dc ac inverter H-bridge Mosfet SO8 Wide Package
Contextual Info: New Product Announcement MOSFET H-bridges optimise design of DC motor control & inverter circuits Description A range of four H-bridge MOSFET packages from Diodes Incorporated is set to dramatically simplify DC motor control circuits, by reducing both component

Contextual Info: SSF25N40A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 400V

EIGHT MOSFET ARRAY

Abstract: ns-1a AP0332CG AP0332 high voltage piezoelectric transducer EIGHT p-channel MOSFET ARRAY
Contextual Info: AP0332 8 P-Channel Latchable Power MOSFET Array Ordering Information VOO RO ON IO(ON) IO(OFF) * Order Number/Package (max) (max) (min) (max) SO-16 -320V 700 ohms -15mA -1.875nA AP0332CG *Average current per channel, measured with all eight channels connected in parallel.

Contextual Info: SUPERTEX INC blE » fiTTBE'îS DDDaSin 3T1 ISTX AP04 V . Supertex inc. G ate Protected Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package BVoss/ BVoos min RDS(ON) (max) •dcon) (min) loss” V|)S =

1016ap

Contextual Info: 8 P-Channel Latchable Power MOSFET Array Ordering Information Voo ^O O N ^O(ON) 1O(OFF) * Order Number/Package (max) (max) (min) (max) SO-16 -320V 700 ohms -15mA -1.875nA AP0332CG * Average cu rre n t p e r chan n e l, m easured w ith all e ig h t ch annels co nn e cte d in p arallel.

ap0420

Abstract: AP0432
Contextual Info: A P04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package * t 700n -15mA -1 .5nA — AP0416NA AP0416WG AP0416ND -200V 600n -15mA — — AP0420NA — AP0420ND -300V

IRFP448

Abstract: irfp448 POWER MOSFET
Contextual Info: International S Rectifier PD-9.595A IRFP448 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^d s s ~ 500V ^DS on = 0 . 6 0 0

Contextual Info: NTR4503N Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23 Features • • • • Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint 3 x 3 mm Pb−Free Package is Available

TD-SCDMA

Abstract: A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to

5962R1321001KXA

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 18 REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY Greg Cecil 1 2 3 4 5 6 7 8 9 10 11 12 13 DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to

IRFH5301

Abstract: AN-1154 IRFH5301TR2PBF IRFH5301TRPBF
Contextual Info: PD -96276 IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters

Contextual Info: PD -96276 IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters

MRF6S9125N

Abstract: CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1 PCN12895
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with

Device Test

Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
Contextual Info: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 18 REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY Greg Cecil 1 2 3 4 5 6 7 8 9 10 11 12 13 DLA LAND AND MARITIME STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL

Contextual Info: IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters