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    CRCW121015R0FKEA Price and Stock

    Vishay Dale CRCW121015R0FKEAHP

    RES SMD 15 OHM 1% 3/4W 1210
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    Vishay Dale CRCW121015R0FKEA

    RES SMD 15 OHM 1% 1/2W 1210
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    Thick Film Resistors - SMD 1/2watt 15ohms 1%
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    CRCW121015R0FKEA Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CRCW121015R0FKEA Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 15 OHM 1% 1/2W 1210 Original PDF
    CRCW121015R0FKEAHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 15 OHM 1% 3/4W 1210 Original PDF

    CRCW121015R0FKEA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original
    PDF MRF6S9125N MRF6S9125NR1/NBR1 MRFE6S9125NR1/NBR1. PCN12895 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1

    T491B476K016AT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications


    Original
    PDF MRFE6S9125N MRFE6S9125NR1 MRFE6S9125NBR1 T491B476K016AT

    T491B476K016AT

    Abstract: CRCW121015R0FKEA MRFE6S9125NR1 A114 A115 AN1955 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications


    Original
    PDF MRFE6S9125N MRFE6S9125NR1 MRFE6S9125NBR1 T491B476K016AT CRCW121015R0FKEA A114 A115 AN1955 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1

    MRF6S9125N

    Abstract: CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 MRF6S9125NR1 PCN12895
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original
    PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 MRF6S9125N CRCW121015R0FKEA atc100b6r2 A114 A115 C101 JESD22 MRF6S9125NBR1 PCN12895

    300 watts power amplifier layout rms

    Abstract: capacitor 15 F 50 VDC Chemi-Con DATE CODES A114 A115 C101 JESD22 MRF6S9125N MRF6S9125NBR1 MRF6S9125NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original
    PDF MRF6S9125N MRF6S9125NR1/NBR1 MRFE6S9125NR1/NBR1. PCN12895 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 300 watts power amplifier layout rms capacitor 15 F 50 VDC Chemi-Con DATE CODES A114 A115 C101 JESD22 MRF6S9125N MRF6S9125NBR1