1024KX Search Results

Contextual Info: EDI8F321024C Electronic Designs Inc. High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 1024Kx32 bit CMOS Static Random Access Memory

Contextual Info: WZ4KX3Ö 5KAM Module 1024Kx36 Static RAM CMOS, High Speed Module Features 1024Kx36 bit CMOS Static The EDI9G361024C is a high speed 36 megabit Static RAM Random Access Memory module organized as 1024K words by 36 bits. This module • Access Times: 17, 20 and 25

Contextual Info: ! j * . WPF1024K32-XPBX 1024Kx32 FLASH BALL GRID ARRAY PRELIMINARY * FEATURES • Access Times of 9 0 ,150ns ■ Organized as 1024Kx32 ■ Perimeter Ball Grid Packaging ■ Commercial and Industrial Temperature Ranges • 35mm BGA: ■ 5 Volt Power Supply, 12 V pp

Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX DUAL VOLTAGE LH28F800SUTD 8M 1024Kx8/512Kx16 3V Dual Work

Contextual Info: AK5361024BWP 1,048,576 Word by 36 Bit CMOS Dynamic Random Access Memory MICEOCIECÏÏIT CORPORATION DESCRIPTION The Accutek AK5361024BWP high density memory module is a CMOS dynamic RAM organized in 1024Kx 36 bit words. The mod­ ule consists of two standard 1 Meg x 16 bits DRAMs and one 1 Meg

Contextual Info: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

WF1024K32-XXX

Abstract: sMD .v05 smd V05
Contextual Info: c WHITE /MICROELECTRONICS a WF1024K32-XXX 1024Kx32 12V FLASH M ODULE FEATURES • 100,000 Erase/Program C ycles ■ ■ Organized as 1024Kx32 ■ Com m ercial, Industrial and M ilita ry T em peratu re Ranges ■ A c c e s s T im es of 1 0 0 ,150nS Packaging:

Contextual Info: EDI8F321024C White Electronic Designs 1024Kx32 Static RAM CMOS, High Speed Module FEATURES n DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy

Contextual Info: TT WF1024K32-XXX 11/HITE / M I C R O E L E C T R O N I C S 1024Kx32 12V FLASH MODULE PRELIMINARY* FEATURES • 12 V o lt Programming. 5V ± 10% Supply. ■ Access Times of 100,150 nS ■ Low Power CMOS, 3mA Standby Typical ■ ■ Optional Ready/Busy status pinout in CQFP

Contextual Info: WHITE /MICROELECTRONICS WPF1024K32-XPBX 1024Kx32 FLASH BALL GRID ARRAY PRELIMINARY* FEATURES • A c c e s s Tim es of 9 0 , 150ns ■ Organized a s 1024K x32 ■ Perim eter Ball Grid Pa ckaging ■ Com m ercial and Industrial Tem perature R a n ge s • 35m m BG A:

EDI8F81024C

Abstract: OC98N a410c
Contextual Info: ^EDI EDI8F81024C 1Mtgx8 SRAM Module ELECTRONC DESIGNS. WC 1Megx8 Static RAM CMOS, Module Features 1024Kx8 bit CMOS Static The EDI8F81024C is a 8 Megabit CMOS Static RAM based Random Access Memory on eight 128Kx8 Static RAMs mounted on a multi-layered • Access Times 70 thru 100ns

Contextual Info: ^EDI EDI8G321024V 1024KX32 SRAM Module ELECTRONIC DESIGNS, IN C 1024Kx32 Static RAM CMOS, High Speed Module Features 1024Kx32 bit C M O S Static T h e E D I8 G 3 2 1 0 2 4 V is a high speed 32 m egabit Static RA M m odule organized as 1 0 2 4 K by 32 bits. This

Contextual Info: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

Contextual Info: EDI8F321024C ^ E D I 11Q24KX32 SRAM Module EL£CTRüNICDE5lSN&INC 10mx32 Static RAM CHIOS, Hicfi Speed Module Features TheEDI8F321024C is a high speed 32 megabit Static RAM 1024Kx32 bit CMOS Static module organized as 1024K words by 32 bits. This module Random Access Memory

PN-84

Contextual Info: bq4016/bq4016Y BENCHMARQ 1024Kx8 Nonvolatile SRAM Features General Description > D a ta retention in the absence of power The CM O S bq4016 is a nonvolatile 8,388,608-bit sta tic RAM organized a s 1,048,576 w ords by 8 bits. The in ­ teg ra l control circuitry an d lithium

Contextual Info: bq4016/bq4016Y 1024Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

H31M1

Abstract: EDI8M11024C 901ac
Contextual Info: m o EDI8M11024C i Electronic D »*lgn i Inc. High Speed Megabit SRAM Module railDiOIMmf 1Mx1 Static RAM CMOS, High Speed Module Features The EDI8M11024C is an extremely high density, 1024Kx1 bit, high speed Static RAM module con­ structed using four 256Kx1 Static RAMs in leadlesschip

EDI8F321024C

Contextual Info: EDI8F321024C White Electronic Designs 1024Kx32 Static RAM CMOS, High Speed Module FEATURES  DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ

Contextual Info: EDI8G321024V 1024Kx32 SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features 1024Kx32 bit CMOS Static Random Access Memory • Access Times: 12, 15, 17, and 20ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package

EDI8F81024C

Abstract: EDI8F81024C100BSC EDI8F81024C70BFC EDI8F81024C70BSC EDI8F81024C85BSC
Contextual Info: EDI8F81024C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features 1024Kx8 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F81024LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks

Contextual Info: ^EDI EDI8F321024C ELECTRONIC DESIGNS INC. • High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This 1024Kx32 bit CMOS Static

Contextual Info: WS512K32-XXX M/HITE /M ICROELECTRONICS 512Kx32 SRAM MODULE PRELIMINARY* Organized as 512Kx32, U se r C o n fig u ra b le as 1024Kx16 or 2 M x8 C o m m ercial, Industrial and M ilita r y T em peratu re R anges FEATURES TTL C o m p atib le Inputs and O utputs

Contextual Info: L •V □PM Dense-Pac Microsystems, Inc. x DPZ1MS16P 1024KX 16 FLASH MEMORY MODULE O PRELIMINARY DESCRIPTION: The DPZ1M S16P is a 16 megabit CM O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 128K x 8 FLASH memory devices

Contextual Info: CYM1471 CYM1481 CYPRESS 1024KX 8 SRAM Module 2048K x 8 SRAM Module F e a tu re s F u n c tio n a l D escription • High-density 8-/l6-m egabit SRAM modules The CYM1471 and CYM1481 are highperform ance 8-megabit and 16*megabit static RAM m odules organized as 1024K