1024KX16 Search Results

Contextual Info: WS512K32-XXX M/HITE /M ICROELECTRONICS 512Kx32 SRAM MODULE PRELIMINARY* Organized as 512Kx32, U se r C o n fig u ra b le as 1024Kx16 or 2 M x8 C o m m ercial, Industrial and M ilita r y T em peratu re R anges FEATURES TTL C o m p atib le Inputs and O utputs

0120d

Contextual Info: RDRAM 512Mb 1024Kx16/18x32s Advance Information Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.

Contextual Info: ca WS512K32-XXX M/HITE /M IC R O E LE C TR O N IC S 512Kx32 SRAM MODULE p r e l im in a r y * • O rganized as 51 2Kx32, U se r C o n fig u ra b le as 1024Kx16 or 2M x8 ■ Co m m ercial, Industrial and M ilita r y T em peratu re R anges FEATU R ES ■ TTL C o m p atib le Inputs and O utputs

N16T1618C2A

Abstract: N16T1625C2A N16T1630C2A 1024Kx16bit
Contextual Info: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1630C2 1 A N16T1625C2(1)A N16T1618C2(1)A Advance 1024Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The N16T1630C2A, N16T1625C2A

Contextual Info: LY62102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION

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Contextual Info: LY62L102616A Rev. 1.1 16M Bits 2Mx8 / 1Mx16 Switchable LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Correct typo error on the column “UB#”, “LB#” of truth table for row “Byte Read” “Byte Write” and “Output Disable” at

Contextual Info:  LY61L102516A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.2 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issued Added LY61L102516AGL Revised IOH/IOL = -8mA/4mA to IOH/IOL = -4mA/8mA in AC TEST CONDITIONS Lyontek Inc. reserves the rights to change the specifications and products without notice.

Contextual Info: LY62L102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 1.0 Description Initial Issue Added SL Spec. Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Revised FEATURES & ORDERING INFORMATION

Contextual Info: LY62L102516A 1024K x 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issue Issue Date Jan. 09. 2012 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TK 69 TSOP

Abstract: 1024KX16 M5M4V16169RT-10 1-OF-128 7WB1 AD011 M5M4V16169TP-10
Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice.

Contextual Info: IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES •       ADVANCED INFORMATION JULY 2013 DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A

Contextual Info: IS62/65WV102416DALL IS62/65WV102416DBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES •       ADVANCED INFORMATION JULY 2013 DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A

Contextual Info: ça W S512K32-XXX WHITE /MICROELECTRONICS 512Kx32 SRAM MODULE, SMD 5962-94611 P R E L IM IN A R Y * FEATURES • A cce ss Times of 70, 8 5 ,1 0 0 ,120ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ TTL Compatible Inputs and Outputs

WS512K32V-XXX

Contextual Info: White Electronic Designs WS512K32V-XXX ADVANCED* 512Kx32 SRAM 3.3V MODULE FEATURES „ Access Times of 70, 85, 100, 120ns „ TTL Compatible Inputs and Outputs „ Packaging „ Low Voltage Operation: • 66-pin, PGA Type, 1.185 inch square, Hermetic Ceramic HIP Package 401

WS512K32-XXX

Abstract: smd A018
Contextual Info: WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 PRELIMINARY* FEATURES • Access Times of 70, 85, 100, 120ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ TTL Compatible Inputs and Outputs • 66-pin, PGA Type, 1.185 inch square, Hermetic

Contextual Info: LY62102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 1.0 Rev. 1.1 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments

Contextual Info: a WS512K32-XXX WHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE PRELIMINARY* FEATURES • A cce ss Tim es of 70, 8 5 , 1 0 0 , 120nS ■ ■ Packaging ■ TTL C o m p a tib le Inputs and O utputs • 6 6 - p i n , PGA Type, 1.385 inch square, H erm etic C eram ic HIP Package 402 , S M D N u m b e r 5962-9461 1

Contextual Info: MITSUBISHI LS Is TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WQRD BY 16-BIT) CACHED DRAM WITH 16K (1024-WQRD BY 16-BIT) SRAM P relim in ary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.

Contextual Info: REV22 MITSUBISHI LSIs M5M4V16169RT-10,-12,-15 16M C D R A M :16M (1024K -W Q R D BY 16-BIT) CACHED DRAM W ITH 16K (1024-W Q RD BY 16-BIT) SRAM DESCRIPTION The M 5M 4V16169R T is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a 1024

WS512K32V-XXX

Abstract: ah55
Contextual Info: WS512K32V-XXX HI-RELIABILITY PRODUCT 512Kx32 SRAM 3.3V MODULE ADVANCED* FEATURES • Access Times of 70, 85, 100, 120ns ■ Low Voltage • 3.3V ±10% Power Supply ■ Packaging ■ Low Power CMOS • 66-pin, PGA Type, 1.185 inch square, Hermetic Ceramic HIP Package 401

Contextual Info: IS62/65WV102416DALL IS62/65WV102416DBLL PRELIMINARY INFORMATION FEBRUARY 2014 1Mx16 LOW VOLTAGE, ULTRA LOW POWER & LOW POWER CMOS STATIC RAM KEY FEATURES •       DESCRIPTION High-speed access time: 45ns, 55ns. CMOS low power operation Maximum standby current: 12 A

Contextual Info: LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.2 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION

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Contextual Info: LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 1.0 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION