1024X1 STATIC RAM Search Results

1024x1 static ram

Contextual Info: AMI _ S6508/S6508A AMERICAN 1024 BIT 1024X1 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The A M I S6508 family of 1024X1 bit static CMOS RAM s offers ultra low power dissipation w ith a single power supply. The device is available in two versions.

1024x1 static ram

Abstract: ami s6508 8650 1024X1 S6508 S6508-1 S6508A S6508E S6508EI S6508P
Contextual Info: _ S6508/S6508A AMERICAN MIMHl'il 'ill M'i III! ^ j 1024 BIT 1024X1 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6508 family of 1024X 1 bit static CMOS RAMs offers ultra low power dissipation with a single

Contextual Info: AMI _ S6508/S6508A m u im un I in i m I h il im 1024 BIT 1024X1 STATIC CM OS RAM Features General Description □ Ultra Low Standby Power □ S6508 Completely TTL Compatible □ S6508A Completely CMOS Compatible

1024x1 static ram

Abstract: CX2201A
Contextual Info: 1K Commercial X2201A e m 1024x1 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • Infinite E^PROM Array Recall, RAM Read and Write Cycles • Access Time of 300 ns Max.

93L425DC

Abstract: 93425 1024x1 static ram
Contextual Info: 93425/93L425 1024x1-Bit Static Random Access Memory FAIRCHILD A Schlumberger Company Memory and High Speed Logic Description The 93425 is a 1024-bit read/write Random Access Memory RAM , organized 1024 words by one bit. It is designed for high speed cache, control and buffer

Contextual Info: HM-6518 H A R R IS æ S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power Standby. 50nW Max. The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous

X2201A

Abstract: 710ST
Contextual Info: t 1K Commercial X2201A e s r 1024x1 Bit Nonvolatile Static RAM The NOVRAM design allows data to be easily trans­ ferred from RAM to E2PROM store and from E2PROM to RAM (recall). The store operation is com­ pleted in 10 ms or less and the recall is typically com­

HM3-6518-9

Abstract: 1024x1 static ram 6518-9 HM3-6518
Contextual Info: m HM-6518 H A R R IS S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power Standby. 50nW Max. The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous

1024x1 static ram

Abstract: S4025 S4025H s4015 IS401
Contextual Info: Am i S 4 0 1 5 /S 4 0 2 5 RAMs 1 0 2 4 BIT 1024x1 HIGH SPEED STATIC VMOS RAM Fea tu res G en era l D escription □ Pin Compatible with 93415 (S4015) and 93425 (S4025) □ Single + 5V Power Supply □ Completely TTL Compatible □ Open Collector Output — S4015

BIT 3195 G

Abstract: 1024x1 static ram
Contextual Info: f /\?r c h ?l B F100415 1024x1-Bit Static Random Access Memory A Schlumberger Company F100K ECL Product Connection Diagram Description The F100415 is a 1024-bit read/w rite Random Access M em ory RAM , organized as 1024 w ords by one bit per w ord and designed fo r high-speed scratchpad, control

1024X1

Contextual Info: HM-6508/883 £ü HARRIS S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed In Accordance to MII-Std-883 and is Fully Conformant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM

Contextual Info: HM-6508/883 fS l H A R R I S S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and Is Fully Conform ant Under the Provi­ sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM

Z80A CPU

Abstract: Z80A-CTC z80a-PIO 2316E 4027 ram Z80A Z80A-CPU z80 pio Z80 RAM 1024x1 static ram
Contextual Info: MOS INTEGRATED CIRCUITS continued POWER TEMP. RANGE (°C) RAM 1024x1 bit static 2 5 - 0.25 2.2 2.2 33 - 0-70 D IP K, M M 2316E •ROM 2Kx8 bit 2 5 - 0.45 2.2 2.2 40 - 0-70 DIP R, U M 2704 PROM 512x8 bit 5 5 12 0.45 2.2 2.2 - - 0-70 D IP J M 2708 PROM 1Kx8 bit

4801a 8 pins

Abstract: 4801A 1024x1 static ram EMM Semi 4kx1 static ram 4801 4096 bit static RAM 4096 bit RAM 4801ACC
Contextual Info: *» '•*«>+• »»»V' «*•»,-r/- -» „¿ ÿ î^ - rtSiÈ Em m SEM I FEA TU R ES ■ Single + 5 V Power Supply ■ 4Kx1 Organization ■ Replaces 4 1024x1 Static RAMs ■ Com pletely S tatic—No C locks or Refresh ■ 18 Pin Package ■ A cce ss/C ycle Times As Low As 400 nsec max

1024x1 static ram

Abstract: L15A L25A MCM2125A mcm2115a-45 2115A 530ns
Contextual Info: MCM2115A MCM21L15A MCM2125A MCM21L25A MOTOROLA 1024x1 STATIC RAM M O S T h e M C M 2 1 1 5 A a n d M C M 2 1 2 5 A f a m ili e s a r e h i g h - s p e e d , 1 0 2 4 w o r d s b y o n e - b it , ra n d o m -a c c e s s m e m o r ie s fa b r ic a te d p e r f o r m a n c e N - c h a n n e l s i li c o n - g a t e t e c h n o lo g y .

bk p36

Abstract: 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 M40272
Contextual Info: •n fO «i MOS 4096x1 1024x4 4096x1 - M40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn Item o 0 o Organization s o (O Ô o 3 a Description Access Time ns (Max Cycle Time ns (Min) Power Dissipation mW (Max) S A H > z o 2 > o o m CO 2 m 5 o X k k k k k oo O 03

Contextual Info: HM-6508 f ï î H A R R IS U U S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power S tandby. 50^iW Max. • Low Power O p e ra tio n . 20mW /MHz Max.

1024x1 static ram

Contextual Info: HS-6508RH ¡13 H A R R IS U U S E M I C O N D U C T O R Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Functional Total Dose 2 x 104 RAD Si HS1-6508RH 16 PIN CERAMIC DIP CASE OUTLINE D2, CONFIGURATION 3 • Latch-Up Free To > 5.0 x 1011 RAD(Si)/s

Contextual Info: ¡ f i H U S E M I C O N D U C T O R U A R R HS-6508RH IS Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Functional Total Dose 2 x 104 RAD Si HS1-6508RH 16 PIN CERAMIC DIP CASE OUTLINE D2, CONFIGURATION 3 TOP VIEW • Latch-Up Free To > 5.0 x 1011 RAD(Si)/s

IC HS 8110

Abstract: IC HS 8108 HS 8110 IC HS 8109 hs 8109 IC HS 8108 8 PIN HS 8108 1024x1 static ram
Contextual Info: m H A R R HS-6514RH I S S E M I C O N D U C T O R Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Total Dose 1 x 105 RAD SI HS1-6514RH 18 PIN CERAMIC DIP CASE OUTLINE D-6, CONFIGURATION 3 • Data Upset > 1O0 RAD (SiVs TO P V IE W • Latch-Up Free To > 1 x 1012 RAD (Si)/s

AN 6518

Abstract: 1024x1 static ram hm-6518 Z14H
Contextual Info: HARRIS SEMICOND SECTOR 4bE ]> • HAS M3QS271 GGB'iOTO 1 HM-6518/883 HARRIS SEMICONDUCTOR t - 4 o -" Z _ 3 -o 5 1024x1 C M O S R A M January 1992 Features Description • This Circuit is Processed In Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions of

Intel mcs-40

Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
Contextual Info: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough

1024X1

Abstract: 54C930 ET 3005 D100MU 1024x1 static ram
Contextual Info: I MIL-M-38510/239B 4 September 1984 SUPERSEDING MIL-M-38510/239A USAF 19 January 1981 QUALIFICATION REQUIREMENTS REMOVED MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, CMOS 1024 BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON This specification 1s approved for use by all D e p a r t ­

MOSTEK 36000

Abstract: 3861 mostek MK2408P MK2500P
Contextual Info: CONTENTS I. Functional/Numerical Index II. Shift Registers III. Read Only Memories 16K ROMs 32K ROMs 64K ROMs Programmable ROMs Random Access Memories 4K Dynamic RAMs 16K Dynamic RAMs 4K Static RAMs IV. V. Application Information VI. Packaging VII. Reliability Information