1024X4 Search Results

2114 static ram

Abstract: ic 2114 RAM 2114 ci 2114 memory ic 2114 2114 2114 ram 2114 static ram ic memory 2114 P2114
Contextual Info: 2114 4096 Bit 1024x4 NMOS Static RAM Ö M Ü f^ D IL FEATURES D E S C R IP T IO N • • • • • • • • The 2114 is a 4096-bit s ta tic R andom A cce ss M em ory organized 1024 w ord s x 4 bits. The s to ra g e c e lls and decode and co n tro l c irc u itry are c o m p le te ly s ta tic , th e re fo re no

ic 2114

Abstract: 2114 static ram memory ic 2114 pin out
Contextual Info: SEMI 2114 STATIC, TTL IN/OUT 1024x4 N-MOS RAM's FEATURES • 1024 words x 4 bits • Three access times 200, 300, and 450 nsec • Low operating power — 175 mW typical • Common output bus • Three-state output drivers • Fully STATIC — no clock or refresh

Contextual Info: CY7C148 CY7C149 CYPRESS SEMICONDUCTOR 1024x4 Static RAM Functional Description • Automatic power-down when d ese­ lected 7C148 TheC Y 7C 148 a n d CY 7C149 arehigh-perform ance C M O S static R A M s organized as 1024 by 4 bits. Easy m em ory expansion

10074A

Abstract: 1024X4 10474 10474AF 10474F
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 4096-BIT ECL RAM 1024x4 10474/10474A Preview DESCRIPTION FEATURES The 10474/10474A device is a 1024 w o rd s by 4 b its fu lly deco d e d R ea d /W rite Ran­ d om A cce ss M em ory, d e sig n e d fo r high speed scra tch pad, co n tro l and b u ffe r s to r­

Contextual Info: High Performance Registered 1024x4 PROM 53/63RA441 Features/B enefits Ordering Information • Edge triggered “D" registers MEMORY • Advanced Schottky processing • 4-bil-wide in 18 pin for high board density PACKAGE SIZE ORGANIZATION PINS 4K 1024x4 18

Contextual Info: ADV MICRO I 0ES7S2Ô 14E D MEMORY 0 G2 7 SL . 3 . *i | a Am9150 Advanced Micro Devices 1024x4 High-Speed Static R/W RAM DISTINCTIVE CHARACTERISTICS • • • • • • • • 1024 x 4 organization High speed- 2 0 ns Max. access time Separate data inputs and outputs

"Single-Port RAM"

Contextual Info: New Products FPGAs New Spartan-IIE FPGA Family for Digital Consumer Convergence Applications Spartan-IIE FPGAs offer significant performance improvements for nextgeneration consumer products. Table 2. The memory block can be used as 4096x1, 2048x2, 1024x4, 512x8, or

1024X4

Contextual Info: ECL 1024x4-BIT BIPOLAR RANDOM FUJITSU ACCESS MEMORY MB 7077 September 1978 1024x4 BIPOLAR RANDOM ACCESS MEMORY The Fujitsu MB 7077 is a fully decoded 4096 bit E C L read/write random access memory designed for high-speed scratch pad, control and buffer storage

tc 89101 p

Contextual Info: CYPRESS SEMICONDUCTOR Features 1024x4 ECL Static RAM • On-chip voltage compensation for im­ proved noise margin • 1024 x 4 —bit organization • Ultra high speed/standard power • Open em itter output for ease o f memory expansion — Ia a = 3 -5 n s

82S137

Abstract: 4 to 16 decoder for ttl circuit GDIP1-T18 bipolar PROM 1024X4 a2712 1024x4 prom
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 1024x4 82S137 FEATURES DESCRIPTION • Address access time: 70ns max • Input loading: -150µA max • On-chip address decoding • No separate fusing pins

S2114

Abstract: S211 2114L 2114 static ram RAM 2114 vmos S2114-1 S2114-2 S2114-3 S2114A-1
Contextual Info: AMI S 2114 40 96 BIT 1024x4 STATIC V M O S RAM Features G eneral D escription □ High Speed Operation: Access Time: 150ns Maximum (-1 ) The AMI S2114 is a 4096 bit fully static RAM organ­ ized as 1024 words by 4 bits. The device is fully TTL compatible on all inputs and outputs and has a single

3539

Abstract: 4725B 4710B 4720B F16K3 F16K4 F16K5 M40272 M40273 M40274
Contextual Info: 4096x1 4096x1 - •n fO «i MOS 16,384x1 CO ro 1024x4 -fck M 40272 cn 4096x1 o> 4096x1 -4 16,384x1 Item S CD Ô o 3 a Description H > z o Access Time ns Max Cycle Time ns (Min) 2 > o o m CO Power Dissipation mW (Max) S 2 m 5 X o O CD 3 O) ro O) 03 oo 03

K15S

Contextual Info: in t e i M2114A 1024x4 BIT STATIC RAM Military M2114AL-3 M2114AL-4 M2114A-4 M2114AL-5 Max. Access Time ns 150 200 200 250 Max. Current (mA) 50 50 70 70 HMOS Technology Directly TTL Compatible: All Inputs and Outputs Low Power, High Speed Common Data Input and Output Using

Contextual Info: G E C P L E S S E Y «Asm S h M I < O \ I I ] ( ) K s Radiation Hard 1024x4 Bit Static RAM S10306FD S Issue 1.4 O cto ber 1990 Features A3 A4 Ai Ab A# AU • 3}im CMOS-SOS technology • Latch-up free • Fast access time 90ns typical • Total dose 10s rad (Si)

Contextual Info: •> GOULD AM I Semiconductors Preliminary Data Sheet S6514 4096 BIT 1024x4 STATIC CMOS RAM Sep te m be r 1984 Features General Description □ □ □ □ □ □ □ □ The S 6 5 1 4 is a 4096 bit static C M O S R A M organized a s 1024 w o rd s by 4 bits per word. The device offers low

AM91L

Abstract: AM9150 CD3024 1024X4
Contextual Info: a A m 9 1 5 0 A dvS 1024x4 High-Speed Static R/W RAM Devices DISTINCTIVE CHARACTERISTICS • • • • • • • • 1024x4 organization High speed -2 0 ns Max. access time Separate data inputs and outputs Memory reset function High density SLIM 24-pin 300-MIL package

AM2149

Abstract: AM2148 AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55
Contextual Info: Am2148/Am2149 Am21 L48/Am21 L49 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fuily static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels

M4027

Abstract: 4725B 4710B 4720B F16K3 F16K4 F16K5 M40272 M40273 M40274
Contextual Info: •n fO «i MOS 4096x1 1024x4 4096x1 - M 40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn M40273 Item 9 00 1. 03 03 > DEVICE NO. S CD Ô o 3 a Description H > z o Access Time ns (Max) Cycle Time ns (Min) 2 > o o m CO w Power Dissipation mW (Max) S 2 m 5 o X O

AM27533

Abstract: AM 27533 DC 27S33 am27s33
Contextual Info: a Am27S33/27S33A Advanced Micro 4,096-Bit 1024x4 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs

AM91L148

Abstract: 9114 RAM AM81H 91L14
Contextual Info: A m 9 1 1 4 /A m 9 1 L 1 4 “ " 1024x4 Static RAM S Devices DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access times down to 200 ns Am9114 is a direct plug-in replacement for 2114 • • High output drive: 3.2-mA sink current @ 0.4 V

Contextual Info: Advanced Micro Devices Am9150 1024x4 High-Speed Static R/W RAM DISTINCTIVE CHARACTERISTICS • • • • 1024x4 organization High speed - 20 ns Max. access time Separate data inputs and outputs Memory reset function • • • • High density SLIM 24-pin 300-MIL package

91L14

Abstract: cd018 ST 9114 Am91L14
Contextual Info: a Am9114/Am91 L14 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • Low operating and standby power Access tim es down to 200 ns Am9114 is a direct plug-in replacem ent fo r 2114 • • High output drive: 3.2-mA sink current @ 0.4 V TTL-kJentical input/output levels

MA5114

Abstract: a8415
Contextual Info: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with

MA5114

Abstract: 17-18L
Contextual Info: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with