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    1025 MOSFET Search Results

    1025 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    1025 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ERJ8GEYJ100V

    Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
    Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V


    Original     		PDF HVV1012-250 429-HVVi EG-01-DS09B ERJ8GEYJ100V Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S

    Cycle10s

    Abstract: mode 5 IFF L-band RF MOSFET transistor AZ 1
    Text: The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10 s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV1012-250 EG-01-DS09A 429-HVVi Cycle10s mode 5 IFF L-band RF MOSFET transistor AZ 1

    ap3608

    Abstract: ap3608E AP3039 SOIC-14 10V 3W LED DRIVER
    Text: Application Note 1025 Design Consideration with AP3039 Prepared by Wei Feng System Engineering Dept. protection to limit the output voltage. The OVP voltage can be set through external resistors. If the output voltage is higher than the OVP high threshold point, it


    Original     		PDF AP3039 AP3039 ap3608 ap3608E SOIC-14 10V 3W LED DRIVER

    GLF2012T

    Abstract: GLF2012T100K R1218X R1218XXX1A R1218XXX2A R1218X031A
    Text: R1218x SERIES Step-up DC/DC converter for Whilte LED Backlight NO.EA-006-1025 OUTLINE The R1218X Series are PWM control type step-up DC/DC converter ICs with low supply current. The R1218X is fully dedicated to drive White LED with constant current. Each of these ICs consists of an NMOS FET, an


    Original     		PDF R1218x EA-006-1025 R1218X R1218XXX1A, R1218XXX2A, R1218X021A R1218X041A GLF2012T GLF2012T100K R1218XXX1A R1218XXX2A R1218X031A

    Untitled

    Abstract: No abstract text available
    Text: Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench


    Original     		PDF WNM2024 OT-23 WNM2024

    WNM2025

    Abstract: No abstract text available
    Text: Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench


    Original     		PDF WNM2025 OT-23-3L WNM2025

    TO-254Z

    Abstract: No abstract text available
    Text: SFF55N20M SFF55N20Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 55 AMP N-Channel POWER MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


    Original     		PDF SFF55N20M SFF55N20Z SFF55N20 O-254 O-254Z Fa850 O-254 TO-254Z

    74857

    Abstract: 18A60
    Text: SPICE Device Model SUD50N025-4m5P Vishay Siliconix N-Channel 25V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N025-4m5P 18-Jul-08 74857 18A60

    HT0440LG

    Abstract: 400V switching transistor HT0440 power supply 400v circuit diagram HT0440N4 HT04
    Text: HT0440 Preliminary High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description ±400V input to output isolation The Supertex HT0440 is a dual high voltage isolated driver


    Original     		PDF HT0440 HT0440LG HT0440N4 HT0440 600pF HT0440LG 400V switching transistor power supply 400v circuit diagram HT0440N4 HT04

    HT0440N

    Abstract: HT04
    Text: BACK HT0440 Preliminary High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description ±400V input to output isolation The Supertex HT0440 is a dual high voltage isolated driver


    Original     		PDF HT0440 HT0440LG HT0440N4 HT0440 600pF 600pF HT0440N HT04

    BFC12

    Abstract: No abstract text available
    Text: SEME BFC12 LAB 4TH GENERATION MOSFET SOT–227 Package Outline. Dimensions in mm inches 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) 2 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) Hex Nut M 4 (4 places) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )


    Original     		PDF BFC12 BFC12

    separately excited dc motor control

    Abstract: variable frequency drive block diagram motor stop with mosfet of 24 volts 60 rpm dc motor three phase motor variable speed control circuit DC PM Motor Servo Amplifier japan servo co FED circuit diagram, variable speed drives separately excited dc motor separately excited motor
    Text: Ordering number : EN 4873 Thick Film Hybrid IC STK6217 Unidirectional DC Motor Driver with Constant-Speed Digital Servo Controller output current: 8 A Overview The STK6217 is a hybrid IC that combines in a single package a unidirectional DC motor driver, a PLL


    Original     		PDF STK6217 STK6217 LC7991) separately excited dc motor control variable frequency drive block diagram motor stop with mosfet of 24 volts 60 rpm dc motor three phase motor variable speed control circuit DC PM Motor Servo Amplifier japan servo co FED circuit diagram, variable speed drives separately excited dc motor separately excited motor

    C15VL

    Abstract: No abstract text available
    Text: DIXYS IGBT IXSH 25N100 Low V,CE sat vCES = 1000 V 1025 = 50 V CE(Sa„ = 3.5 V Short Circuit SOA Capability Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V CGR T j = 2 5 °C to 1 5 0 °C ;R GE=1 M ii 1000 V GES Continuous +20 V GEM Transient i3 0


    OCR Scan     		PDF 25N100 O-247 IXSH25N100 C15VL

    2N4351

    Abstract: No abstract text available
    Text: SOLID STATE 3875081 01 DE I 3fl?SDfll D010T7? 01E G E S O LID STATE 10977 D T- 35'- 2 . r 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES ABSOLUTE MAXIMUM RATINGS • • • • • Ta = 25“C unless otherwise noted Drain-Source Voltage or Drain-Body V o lta g e .25V


    OCR Scan     		PDF 2N4351 D01CH77 100mA 10sec) 300ms. 2N4351

    marking code g2s

    Abstract: No abstract text available
    Text: SIEMENS < *,0 0 5 S Silicon N-Channel MOSFET Tetrode •For low-noise, high gain-controlled input stages up to 1GH; ■Operating voltage 5V 1Integrated stabilized bias network X AGC o HF oIn p u t JX-Ih D ra in G2 I HF O u tp u t + DC G1 1 — r GND ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BF1005S Q62702-F1665 OT-143 1005S 800MHz BF1005S marking code g2s

    Carbon dioxide

    Abstract: simmer
    Text: Superpulse NADA Electronics Leaders in Power Control of DC-switch mode power supplies specifically designed A torange meet the power requirements of low power carbon dioxide lasers for medical and industrial applications. Incorporating proprietary MOSFET technology, the 2000 series has


    OCR Scan     		PDF EN50082 320x180x150 320x180x150 Carbon dioxide simmer

    SP2110

    Abstract: SP1110 SP6110
    Text: INTERNATIONAL RECTIFIER bSE D • HflSSHSE O ü l b B S G ?ÔT H I N R Data Sheet No. PD-1.018B INTERNATIONA!. RECTIFIER E?R SERIES SP Microelectronic Power IC Relay ChipSwitch SIP Relay 1.0 Amp Free Standing 3.0 Amps (with Heat Management 20-280 v a c S’X Power IC Chips


    OCR Scan     		PDF 00V///sec E50015 RS-443 4A55MS2 SP2110 SP1110 SP6110

    Untitled

    Abstract: No abstract text available
    Text: APT8065BVR A dvanced P o w er Te c h n o lo g y ' 800V 13A 0.650Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT8065BVR O-247 APT8065BVR MIL-STD-750 O-247AD

    diode 152

    Abstract: BFC12
    Text: IUI i^ E INI SEME BFC12 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 11 e (0 463) VDSS Terminal 1 Terminal 3 Source 2* Gate Terminal 2 Terminal 4 Drain Source 1


    OCR Scan     		PDF BFC12 OT-227 MIL-STD-750 diode 152 BFC12

    mosfet 1026

    Abstract: 1026 mosfet
    Text: ERFS440A Advanced Power MOSFET FEATURES BVdss = 500 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VOS= 500V


    OCR Scan     		PDF ERFS440A IRFS440A mosfet 1026 1026 mosfet

    HT04

    Abstract: No abstract text available
    Text: HT0440 P relim ina ry High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description □ +400V input to output isolation □ +700V isolation between outputs □


    OCR Scan     		PDF HT0440 HT0440LG HT0440N4 HT0440 600pF HT04

    Untitled

    Abstract: No abstract text available
    Text: HT0440 S u p e r t e x i n c . Preliminary High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description □ ±400V input to output isolation □ ±700V isolation between outputs


    OCR Scan     		PDF HT0440 HT0440LG HT0440N4 HT0440 00G441D 600pF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OSM-3 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm • 10V DRIVE • VDSS . 1 5 0 V • TDS ON (MAX) . 1 7 0 m Q


    OCR Scan     		PDF 100ns 1CH23

    IRFP460

    Abstract: IRFP460 IR diode sg 89a international rectifier NE 22 dioda rectifier
    Text: PD-9.512B International S Rectifier IRFP460 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 5 0 0 V R DS on = 0 . 2 7 0


    OCR Scan     		PDF IRFP460 O-247 T0-220 O-218 IRFP460 IRFP460 IR diode sg 89a international rectifier NE 22 dioda rectifier