ERJ8GEYJ100V Search Results
ERJ8GEYJ100V Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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ERJ8GEYJ100V |
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RES 10-OHM 5% 0.25W 200PPM THK-FILM SMD-1206 TR-7-PA | Original | 229.14KB | 5 | ||
ERJ-8GEYJ100V | Panasonic Electronic Components | Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 1/4W 1206 | Original | 111.01KB |
ERJ8GEYJ100V Price and Stock
Panasonic Electronic Components ERJ-8GEYJ100VRES SMD 10 OHM 5% 1/4W 1206 |
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ERJ-8GEYJ100V | Digi-Reel | 63,905 | 1 |
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ERJ-8GEYJ100V | Reel | 30,000 | 22 Weeks | 5,000 |
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ERJ-8GEYJ100V | 38,748 |
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ERJ-8GEYJ100V | 1,072,331 | 7,143 |
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ERJ-8GEYJ100V | 939,031 | 20,833 |
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ERJ-8GEYJ100V | Reel | 5,000 |
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ERJ-8GEYJ100V | 175,000 |
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ERJ-8GEYJ100V | 29,688 |
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ERJ-8GEYJ100V | Reel | 80,000 | 5,000 |
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ERJ-8GEYJ100V | Cut Tape | 1,072,431 | 0 Weeks, 1 Days | 100 |
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ERJ-8GEYJ100V | 14,950 |
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ERJ-8GEYJ100V | 175,000 |
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ERJ-8GEYJ100V | 45,000 | 1 |
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Panasonic Electronic Components ERJ8GEYJ100VRes, Thick Film, 10R, 5%, 0.25W, 1206; Resistance:10Ohm; Resistance Tolerance:± 5%; Power Rating:250Mw; Resistor Case/Package:1206 [3216 Metric]; Resistor Technology:Thick Film; Resistor Type:General Purpose; Voltage Rating:200V Rohs Compliant: Yes |Panasonic ERJ8GEYJ100V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ERJ8GEYJ100V | Cut Tape | 46,575 | 1 |
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ERJ8GEYJ100V | 20,000 |
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ERJ8GEYJ100V | 49,232 |
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ERJ8GEYJ100V | 5,000 |
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ERJ8GEYJ100V | 14,673 |
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ERJ8GEYJ100V | Reel | 21 Weeks | 50,000 |
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ERJ8GEYJ100V | 52 Weeks | 5,000 |
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ERJ8GEYJ100V | 330,322 |
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Panasonic Electronic Components ERJ-8GEYJ100V-CUT TAPEResistor, Thick Film, Res 10 Ohms, Pwr-Rtg 0.25 W, Tol 5%,SMT,1206,Cut Tape |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ERJ-8GEYJ100V-CUT TAPE | Bulk | 89,555 | 50,000 |
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Panasonic Electronic Components ERJ-8GEYJ100V-T/RResistor, Thick Film, Res 10 Ohms, Pwr-Rtg 0.25 W, Tol 5%,SMT,1206,Tape & Reel |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ERJ-8GEYJ100V-T/R | Bulk | 50,000 |
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Panasonic Corporation ERJ-8GEYJ100V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ERJ-8GEYJ100V | 2,793 |
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ERJ8GEYJ100V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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5.1 subwoofer printed circuit board
Abstract: 5.1 audio amplifier board 5.1 home theatre circuit 5.1 sound system circuit board MP7720DS 5.1 Channel Audio Board MP7782DF 5.1 Channel audio amplifier 5.1 audio power amplifier 5.1 audio circuit
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EV7720DS-7782-00D EV7720DS-7782-00D MP7720DS) MP7782) 5.1 subwoofer printed circuit board 5.1 audio amplifier board 5.1 home theatre circuit 5.1 sound system circuit board MP7720DS 5.1 Channel Audio Board MP7782DF 5.1 Channel audio amplifier 5.1 audio power amplifier 5.1 audio circuit | |
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RF3928 RF3928280W DS120508 | |
Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF OUT VD Pin 2 GND BASE Supports Multiple Pulse |
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RFHA1020 DS120508 | |
EI -40CContextual Info: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical |
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RF3933 DS120306 EI -40C | |
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RF3928B DS120503 | |
Contextual Info: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink Technology Single Circuit for 865MHz To |
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RFG1M09180 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 47dBm | |
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RF3928B RF3928B DS120503 | |
Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology |
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RFHA1025 RFHA1025 96GHz 215GHz DS120613 | |
Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology |
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RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm | |
SEMICONDUCTOR J598Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse |
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RFHA1023 RFHA1023 DS120508 SEMICONDUCTOR J598 | |
RFG1M20180
Abstract: ATC800B820JT
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RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS120418 ATC800B820JT | |
Contextual Info: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features Advanced GaN HEMT Technology Peak Power 125W Wideband Single Circuit for 225 - 450MHz 48V Modulated Typical |
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RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc | |
RFG1M20180SB
Abstract: j35 fet RFG1M20180SQ
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RFG1M20180 RFG1M20180 RF400-2 -38dBc -55dBc DS120803 RFG1M20180SB j35 fet RFG1M20180SQ | |
GaN hemt
Abstract: power transistor gan s-band air surveillance system diagram using radar
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RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar | |
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Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical |
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RF3934 RF3934 DS120306 | |
RFHA1023
Abstract: SEMICONDUCTOR J598
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RFHA1023 RFHA1023 DS110630 SEMICONDUCTOR J598 | |
Contextual Info: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to |
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RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS110406 | |
GRM55ER72A475KA01L
Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
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RF3934 RF3934 DS111005 GRM55ER72A475KA01L DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS | |
ATC100B620
Abstract: L22 amplifier Gan hemt transistor RFMD
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RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD | |
Contextual Info: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium |
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RFHA1027 RFHA1027 DS131216 | |
Contextual Info: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed |
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RFG1M20090 RFG1M20090 DS130823 | |
Contextual Info: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier |
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RF3933 RF3933 DS130905 | |
Contextual Info: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier |
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RF3934 RF3934 DS131206 | |
Contextual Info: RFG1M20180 RFG1M20180 180W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high |
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RFG1M20180 RFG1M20180 DS130822 |