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    102SL Search Results

    102SL Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    10127721-102SLF Amphenol Communications Solutions Minitek® Pwr 3.0, Dual Row, Vertical Through Hole Header, 10 Position, 3.2mm Kink Tail (Gold Flash) plating, GW Compatible LCP, Natural Color,Tray Packing. Visit Amphenol Communications Solutions
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    102SL Price and Stock

    Alpha Wire 78102-SL199

    CABLE 2CON 28AWG SLATE SHLD FEET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 78102-SL199 526 1
    • 1 $4.86
    • 10 $4.147
    • 100 $3.5177
    • 1000 $3.5177
    • 10000 $3.5177
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    Master Electronics 78102-SL199
    • 1 -
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    • 100 $2.5
    • 1000 $2.19
    • 10000 $2.05
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    Panasonic Electronic Components EEE-FK1C102SL

    CAP ALUM 1000UF 20% 16V SMD
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    DigiKey EEE-FK1C102SL Cut Tape 495 1
    • 1 $1.32
    • 10 $0.825
    • 100 $0.5634
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    EEE-FK1C102SL Digi-Reel 495 1
    • 1 $1.32
    • 10 $0.825
    • 100 $0.5634
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    Avnet Americas EEE-FK1C102SL Reel 21 Weeks 1,000
    • 1 -
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    • 1000 $0.3687
    • 10000 $0.33835
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    Mouser Electronics EEE-FK1C102SL 200
    • 1 $1.01
    • 10 $0.626
    • 100 $0.555
    • 1000 $0.385
    • 10000 $0.337
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    TTI EEE-FK1C102SL Reel 1,000
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    • 10000 $0.334
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    Master Electronics EEE-FK1C102SL
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    • 10000 $0.3381
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    Ozdisan Elektronik EEE-FK1C102SL
    • 1 $0.69391
    • 10 $0.69391
    • 100 $0.69391
    • 1000 $0.6034
    • 10000 $0.6034
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    Alpha Wire 79102-SL005

    CABLE 3COND 20AWG SLATE SHLD
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    DigiKey 79102-SL005 400 100
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    • 100 $7.8124
    • 1000 $6.88283
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    Master Electronics 79102-SL005 1
    • 1 $747.53
    • 10 $709.05
    • 100 $709.05
    • 1000 $709.05
    • 10000 $709.05
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    Alpha Wire 77102-SL005

    CABLE 2COND 24AWG SLATE SHLD
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    DigiKey 77102-SL005 100 100
    • 1 -
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    • 100 $2.8296
    • 1000 $2.38956
    • 10000 $2.31401
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    Master Electronics 77102-SL005 3
    • 1 $327.34
    • 10 $268.96
    • 100 $266.27
    • 1000 $266.27
    • 10000 $266.27
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    Alpha Wire 78102-SL005

    CABLE 2CON 28AWG SLATE SHLD 100'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 78102-SL005 12 1
    • 1 $221.99
    • 10 $187.693
    • 100 $174.5318
    • 1000 $174.5318
    • 10000 $174.5318
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    Master Electronics 78102-SL005 8
    • 1 $197.79
    • 10 $170.27
    • 100 $168.57
    • 1000 $168.57
    • 10000 $168.57
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    102SL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    102 SL199 Alpha Wire AC CORDS SLATE 1000 = 1000 FT Original PDF

    102SL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BUZ 102SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS on Package Ordering Code BUZ 102SL-4 55 V 6.2 A 0.033 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings


    Original     		PDF 102SL-4 P-DSO-28 C67078-S. 23/Oct/1997

    DIODE BUZ smd

    Abstract: Q67040-S4010-A5 s4010 BUZ102SL E3045 Q67040-S4010-A2 102SL
    Text: BUZ 102SL Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 47 A • Logic Level • dv/dt rated • 175 ˚C operating temperature


    Original     		PDF 102SL BUZ102SL P-TO263-3-2 Q67040-S4010-A6 BUZ102SL E3045 P-TO220-3-1 Q67040-S4010-A2 E3045A DIODE BUZ smd Q67040-S4010-A5 s4010 E3045 102SL

    BUZ MOSFET

    Abstract: Mosfet 1 cell switch low voltage low resistance SIEMENS MOSFET application
    Text: Higher Cell Density, More Rugged Design MOS-based power semiconductors in S-FET technology can switch currents from a few milliamperes up to several hundred amperes at a voltage of 55 V. Extremely short source lengths make them commutation-proof and more resistant to avalanche breakdowns. At the


    Original     		PDF T0-220 OT-223 P-DS0-28 mid-1997. O-220 BUZ MOSFET Mosfet 1 cell switch low voltage low resistance SIEMENS MOSFET application

    Dual N- AND P-Channel Power FET TO-220 PACKAGE

    Abstract: 100S 101S 102S 103S 104S buz102 TRANSISTOR BSP 2000 smd transistor fh p-channel fet to-220
    Text: Power semiconductors Higher cell density, more rugged design MOS-based power semiconductors in S-FET technology can switch currents from a few milliamperes up to several hundred amperes at a voltage of 55 V. Extremely short source lengths make them commutationproof and more resistant to avalanche breakdowns. At the same time, their specific drain-source on


    Original     		PDF T0-220 OT-223 P-DSO-28 Dual N- AND P-Channel Power FET TO-220 PACKAGE 100S 101S 102S 103S 104S buz102 TRANSISTOR BSP 2000 smd transistor fh p-channel fet to-220

    102SLF

    Abstract: No abstract text available
    Text: 90º HYBRID SURFACE MOUNT MODEL: DQS-30-450LF 30 - 450 MHz FREQUENCY BANDWIDTH FEATURES: ► Ultra-Wide Bandwidth 15:1 ► Small Package Size, Surface Mount ► RoHS Compliant SPECIFICATIONS Frequency 30 - 450 MHz Insertion Loss (dB) Amplitude Unbalance (dB)


    Original     		PDF DQS-30-450LF 102SLF 102SLF

    Untitled

    Abstract: No abstract text available
    Text: 90º HYBRID SURFACE MOUNT MODEL: DQS-100-1000 100 - 1000 MHz Frequency BANDWIDTH FEATURES: ► Ultar-Wide Bandwidth 10:1 ► Small Package Size ► Building Block For: - Power Amplifiers - Image Rejection Mixers - I & Q / SSB Modulators - Phase Shifters & More.


    Original     		PDF DQS-100-1000 102SLF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    package Synergy Microwave

    Abstract: No abstract text available
    Text: - PROPRIETARY INFORMATION - 90º HYBRID SURFACE MOUNT MODEL: DQS-30-450LF 30 - 450 MHz FREQUENCY BANDWIDTH FEATURES: ► Ultra-Wide Bandwidth 15:1 ► Small Package Size, Surface Mount ► RoHS Compliant SPECIFICATIONS Frequency 30 - 450 MHz Insertion Loss (dB)


    Original     		PDF DQS-30-450LF 102SLF package Synergy Microwave

    DIODE S4 62a

    Abstract: siemens 230 98 O transistor Buz 11 siemens EC 230 98 diode zd 37
    Text: SIEMENS BUZ 102SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type ^DS BUZ 102SL-4 55 V 6.2 A ffDS on Package Ordering Code 0.033 £1 P-DSO-28 C67078-S. . . . . . .


    OCR Scan     		PDF 102SL-4 VPS05123 102SL-4 P-DSO-28 C67078-S. DIODE S4 62a siemens 230 98 O transistor Buz 11 siemens EC 230 98 diode zd 37

    BUZ102SL

    Abstract: E3045 Q67040-S4010-A2 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ
    Text: 102SL Infineon te c h n o lo g ie } » m p f°v e d Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f l DS on 0.015 n 47 A t> V 55 • Logic Level


    OCR Scan     		PDF 102SL BUZ102SL_ P-TQ220-3-1 Q67040-S4010-A2 BUZ102SL E3045A P-TQ263-3-2 Q67040-S4010-A6 E3045 TO-92 44E BUZ 1025 marking t54 SMD DIODE gg 45 diode smd marking BUZ

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    Untitled

    Abstract: No abstract text available
    Text: O P JEK Product Bulletin OP290 April 1993 GaAIAs Plastic Infrared Emitting Diodes Types OP29Q, OP291, OP292 Series .3 1 0 7 .8 7 _ .0 4 0 ( 1 .0 2 ) .2 9 0 ( 7 . 3 7 ) (N O T E 11) .1 0 0 ( 2 .5 4 ) NOM CATHODE M EAS U R EM EN T SU R FAC E • (N O T E 8)


    OCR Scan     		PDF OP290 OP29Q, OP291, OP292 S2047 OP290. OP291. P290/Ã P291/0 00173fc>