105NS Search Results

PC28F256P33

Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
Contextual Info: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read

pc28f00ap33

Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

RC28F256P33BF

Abstract: JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E
Contextual Info: Numonyx Flash Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,

pc28f00ap30

Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

TSOP 48 pin flash gbit

Abstract: JS28F00AP33BF 1FFC000
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

pc28f00ap30

Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

JS28F256P33

Abstract: PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF
Contextual Info: Numonyx AxcellTM Flash Memory P3365nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,

Contextual Info: Memory Module Specifications KHX6400D2LL/1G 1GB 128M x 64-Bit PC2-6400 CL4 240-Pin DIMM SPECIFICATIONS Clock Cycle Time tCK CL=5 3ns (min.) / 8ns (max.) Row Cycle Time (tRC) 54ns (min.) Refresh to Active/Refresh Command Time (tRFC) 105ns Row Active Time (tRAS)

numonyx MLC

Abstract: te28f256p33tf PC28F256P33 JS28F256P33 PC48F4400P0TB0E
Contextual Info: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read

strataflash p33

Abstract: PC28F PC28F256P33 JS28F256P33B
Contextual Info: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read

PC28F00AP33BF

Abstract: L 1123 1FF4000
Contextual Info: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit, 1-Gbit Monolithic Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read

Contextual Info: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read

JS28F512P33BF

Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
Contextual Info: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read

k3314

Abstract: 2SK3314 SC-65 jeita sc-65
Contextual Info: 2SK3314 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK3314 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : trr = 105ns (標準) z 逆回復時間が速い。

Contextual Info: Memory Module Specifications KHX6400D2/1G 1GB 128M x 64-Bit PC2-6400 CL5 240-Pin DIMM SPECIFICATIONS Clock Cycle Time tCK CL=5 3ns (min.) / 8ns (max.) Row Cycle Time (tRC) 54ns (min.) Refresh to Active/Refresh Command Time (tRFC) 105ns Row Active Time (tRAS)

PC28F00AP

Contextual Info: Numonyx StrataFlash Embedded Memory P33-65nm 512-Mbit, 1-Gbit Monolithic Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode

IXYX

Abstract: IXYX140N90C3
Contextual Info: Preliminary Technical Information IXYK140N90C3 IXYX140N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBTs for 20-50 kHz Switching = = ≤ = 900V 140A 2.7V 105ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

k3314

Abstract: 2SK3314 SC-65 jeita sc-65
Contextual Info: 2SK3314 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK3314 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : trr = 105ns (標準) z 逆回復時間が速い。

Contextual Info: MX23L1610 3.3 Volt 16-Mbit 2M x 8 / 1M x 16 Mask ROM ORDER INFORMATION FEATURES • Bit organization - 2M x 8 (byte mode) - 1M x 16 (word mode) • Fast access time - 105ns (max.)@3.3V±10% - 100ns (max.)@3.3V±5% • Current - Operating:25mA - Standby:15uA

Contextual Info: Preliminary Technical Information 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) IXYK140N90C3 IXYX140N90C3 High-Speed IGBTs for 20-50 kHz Switching = = ≤ = 900V 140A 2.7V 105ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

MX23L1610

Abstract: MX23L1610MC-10 MX23L1610MC-12 MX23L1610MC-15 MX23L1610PC-10 MX23L1610PC-12 MX23L1610PC-15 MX23L1610TC-10 105ns
Contextual Info: Introduction Selection Guide MX23L1610 16M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 2M x 8 (byte mode) - 1M x 16 (word mode) • Fast access time - 105ns (max.)@3.3V±10% - 100ns (max.)@3.3V±5% • Current - Operating:25mA

Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

KHX6400D2

Abstract: DDR2 Mechanical Dimensions DDR2 240 pin Mechanical Dimensions
Contextual Info: Memory Module Specifications KHX6400D2LLK2/2G 2GB 1GB 128M x 64-Bit x 2 pcs. PC2-6400 CL4 240-Pin DIMM Kit SPECIFICATIONS Clock Cycle Time (tCK) CL=5 3ns (min.) / 8ns (max.) Row Cycle Time (tRC) Command Time (tRFC) 54ns (min.) Refresh to Active/Refresh 105ns

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin