108 POWER TRANSISTOR Search Results

sot123 package

Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
Contextual Info: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ

SOT123

Abstract: SOT-48 sot161 SOT160 SOT-123 BLV32F BFQ68 Applications BLV36 blw86 BLW76
Contextual Info: - 2 ,1-Ot,r RICHARDSON ELECTRONICS m* 3M « ir> 14E 0 7734flciö 0000503 T w -iw .« '» ir f if r r fff Transistors for Broadcast Applications Philips FM Broadcast 87-108 MHz Bipolar Ttansistors Load Power @108 MHz W Type Number Power Gain @ 108 MHz (dB)

all mosfet power amplifier

Abstract: 300w amplifier mosfet amplifier "RF MOSFET" 300W 300w fm amplifier FM500-108 500 W POWER AMPLIFIER power amplifier mosfet 300w rf amplifier Rf power transistor mosfet
Contextual Info: FM500-108 500 W FM RF Power Amplifier Designed for FM transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • • • MOSFET Amplifier BW: 87.5 - 108 MHz

FM300-108

Abstract: FM Amplifier 300w FM300 300w fm amplifier H101X 300w rf amplifier RF GAIN LTD
Contextual Info: FM300-108 300 W - FM Power Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 87.5 - 108 MHz 48 Volts Input/Output 50 Ω

transistor 1x 6 pin

Abstract: RAYTHEON CDMA2000-1X CDMA2000-1XRTT RMPA1759 RMPA1759-108 108 mhz rf linear board
Contextual Info: RF Components RMPA1759-108 Korean PCS 3V CDMA & CDMA2000-1X Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1759-108 power amplifier module PAM is designed for Korean CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50

MS1281A

Abstract: transistor MS1281A W108 MS1281
Contextual Info: MS1281A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MS1281A is Designed for Class C, FM Broadcast Applications up to 108 MHz. FEATURES: PACKAGE STYLE .500 4L FLG • Class C Operation  PG = 9.0 dB at 150 W/108 MHz  Omnigold Metalization System

ASI10588

Abstract: FMB150
Contextual Info: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° • Class C Operation • PG = 9.0 dB at 150 W/108 MHz • Omnigold Metalization System

88-108

Abstract: an power 88-108 mhz 88-108 mhz w power 88-108 mhz Power w
Contextual Info: FM 175 175 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is designed for pulsed systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest

SD1460

Abstract: transistor j 108 ASI10588
Contextual Info: SD1460 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1460 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° • Class C Operation • PG = 9.0 dB at 150 W/108 MHz • Omnigold Metalization System

ASI10589

Abstract: FMB175 c 108 m 229
Contextual Info: FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Class C Operation • PG = 10 dB at 175 W/108 MHz • Omnigold Metalization System

88-108 mhz w power

Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
Contextual Info: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

ASI10587

Abstract: FMB075
Contextual Info: FMB075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB075 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System

TP9380

Abstract: transistor j 108
Contextual Info: TP9380 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System

tp9380

Contextual Info: TP93805 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TP9380 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • Class C Operation • PG = 10 dB at 75 W/108 MHz • Omnigold Metalization System

VHB25-28F

Abstract: ASI10724
Contextual Info: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG FEATURES: B

300w class ab amplifier

Abstract: 88-108 an power 88-108 mhz RPAP88108M700 300w amplifier power amplifier 88-108
Contextual Info: RPAP88108M700 Preliminary Solid State Broadband High Power Pallet Amplifier 88-108 MHz, 700W The RPAP88108M700 is a Class C Pallet Amplifier providing 700 Watts CW Power output. This pallet features MOSFET Transistors and is matched for 50-ohms input and output.

T119 A

Abstract: sot 122 SOT123 Package BLW78
Contextual Info: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain

VHB25-28S

Abstract: ASI10725
Contextual Info: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B

Contextual Info: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°

SD1015

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1015 RF AND MICROWAVE TRANSISTORS 108–152MHz APPLICATIONS Features • • • • • • FM CLASS C TRANSISTOR FREQUENCY 150 MHz POWER OUT 30W POWER GAIN 10dB

M113

Abstract: t4bu SD1013-3
Contextual Info: m âWt* Pr&<iuvt$ m Micmsemi 140 Commerce Drive Wlontgomeryviile, PA 18936-1013 Tel: 215 831-9840 SD1013-3 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 150MHz VOLTAGE 2SV POWER OUT 10W POWER GAIN 10dB EFFICIENCY 55%TYP

BLW31

Contextual Info: BLW31 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES:

Contextual Info: SD1015 RF AND MICROWAVE TRANSISTORS 108–152MHz APPLICATIONS • • • • • • FM CLASS C TRANSISTOR FREQUENCY 150 MHz POWER OUT 30W POWER GAIN 10dB GOLD METALLIZATION COMMON EMITTER DESCRIPTION: The SD1015 is a 28V gold metallized epitaxial silicon NPN planar

SD1015

Contextual Info: SD1015 RF AND MICROWAVE TRANSISTORS 108–152MHz APPLICATIONS Features • • • • • • FM CLASS C TRANSISTOR FREQUENCY 150 MHz POWER OUT 30W POWER GAIN 10dB GOLD METALLIZATION COMMON EMITTER DESCRIPTION: The SD1015 is a 28V gold metallized epitaxial silicon NPN planar