1086-50 TRANSISTOR Search Results

RH1086M

Contextual Info: /Tw m _ RH1086M TECHNOLOGY q.5A and 1.5A Low Dropout Positive Adjustable Regulators D C S C R IP T IO n a b s o lu te T h e R H 1 0 8 6 M positive adjustable regu lator is d e sign e d to P o w e r D i s s ip a t io n . Internally Lim ite d

1086-33

Abstract: AT 1086-33 1086-3.3 1086IT-2 LM317 pin connection 1086IS-2 1086IS 1086-AD 1086s 1086-50 transistor
Contextual Info: tß Semiconductor LM 1086 1.5A Low D ropout Positive R egulators General Description Features The LM 1086 is a series of low d ropout positive voltage regu­ lators w ith a m axim um drop o u t of 1.5V at 1.5A of load c u r­ rent. It has the same pin-out as National Sem iconductor's in­

P348A

Abstract: BFR37 SGS transistor C740 sgs-ates BFY75 2n2388 19142e C720 2N2219 transistor BFW68
Contextual Info: S G S -A T E S Semiconductors Transistors -N P N NPN Small Signal Transistors— continued REFERENCE TABLE Max P tot @ T ams—25*C LVceo lc Range @ lc Max mA (mA) NF (dB) Code (W) (V) h FE — BFR37 0.25 80-250 10 30 0.5-50 10 5Í8 750 BFW68 0.36 40 01-50

MPSU03

Abstract: MPSU04 MPS-U03 MPS-U04
Contextual Info: MPS-U03 SILICON MPS-U04 ST YLE 1: PIN 1. EM ITTER 2. BASE 3. COLLECTOR NPN silicon annular plastic transistors designed for video output circuits utilizing an emitter-follower driver and for horizontal driver applications in television re­ ceivers. CASE 152-02

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors PN3439; PN3440 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 350 V). 1 APPLICATIONS DESCRIPTION collector 2 base 3 emitter • Telephony and professional communication equipment.

BM 1084

Contextual Info: SIEMENS PNP Silicon High-Voltage Transistors BFN 17 BFN 19 • Suitable lor video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 16, BFN 18 NPN Type

Contextual Info: SIEMENS PNP Silicon Darlington Transistors BCV 28 BCV 48 • For general AF applications • High collector current • High current gain • Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 4 3 Package1)

transistor rf m 1104

Abstract: TRANSISTOR 102 K5C 2SD1077 1080II n 1106 n1106 n25x
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

ld 1088 bs

Abstract: k 1094 transistor 1/ld 1088 bs
Contextual Info: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 380 Vbs 1000 V 5.5 A ^bsfon 2w Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage Vbs V DGR Drain-gate voltage

P346A

Abstract: ME8003 SGS C407 BSX20 2n2222a ME9002 BFR37 sgs-ates transistors C760 P348A BSX19
Contextual Info: Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors R EFER EN C E T A B L E << o sat @ lc mA 10 10 0.25 0.25 200 10 0.35 10 40 60 10 0.5 120 150 200 10 10 10 0.25 0.25 12 40 30 25 0.25 10 1 12 20 - 50 0.3 10 BSX19 BSX20 40 40 15 20

BC117

Abstract: T0105 BFR37 C111E 2N2368 2n2388 BFR37 SGS 2N5831 2n918 plastic SGS-ATES
Contextual Info: Sem iconductors Fairchild Sem iconductors Silicon Small Signal Transistors N P N H igh Voltage Amplifier Transistors P la s t ic P a c k a g e T 0 9 2 , T 0 1 0 5 REFERENCE T A B L E C H A R A C T E R I S T IC S @ 25‘C M A X R A T IN G S C ode V CEO Volts

BC118

Abstract: transistor BC118 BFR37 SGS 2n2388 2N706 BC125 BC537 fairchild to-106 fairchild semiconductors BC537-10
Contextual Info: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N General Purpose Am plifier and Sw itching Transistors P la stic P a ck a g e TO 92, T O 105, TO 106 REFEREN CE T A B L E S e e a ls o lo w level and hig h v o ltag e s e ctio n .

2n2222 fairchild

Abstract: BFR37 2N915 2n930 price P346A 2N2369 2N2369A 2N914 BC119 BSX20
Contextual Info: Fairchild Semiconductors Semicondti^Hn Silicon Small Signal Transistors NPN Silicon High Speed Saturated Switching Transistors Metal Can TO IS R EFER EN C E T A B L E For medium speed - see General Purpose Section. C H A R A C T E R IS T IC S @ 25"C M A X R A T IN G S

2n2222 itt

Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711
Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51

D39C2

Abstract: D39C3 D38L3 D38L1 D39C1 lBX1000 D38L1-6 D38L2 D39C1-6 complementary npn-pnp power transistors
Contextual Info: Silicon Transistors Complementary Darlington 123 D38L1-6 The General Electric D38L1-6 and D39C1-6 are Silicon Planar, Epi­ taxial, NPN-PNP complimentary Darlington amplifiers. These devices are designed for medium current-amplifier and switching applications.

DN7-11

Abstract: DP7-11
Contextual Info: PHILIPS DB7-11 DH7-11 DN7-11 DP7-11 CATHODE-RAY TUBE for use In transistorized oscilloscopes with flat face and post-deflection acceleration by means of a helical electrode SCREEN For screen properties please refer to front of this section Useful screen diameter

1086 1

Contextual Info: h "7 > i/7, $ /Transistors 2SB1086 2SB 1086 ltd ' t t v T i V f y - m PNP y ' j 3 > h 7 > y Z $ Epitaxial Planar PNP Silicon Transistor f i } j S l * l S liffl/L o w Freq. Power Amp. • f tJ f i'iiiE I /D im e n s io n s U n it: mm 1) a B E t 'i.5 (B V c e o = -1 2 0 V )o

2N5302

Contextual Info: 7 15 * 15 37 OQg^S^ SGS-THOMSON [Mæ iCTiMO gS S 6 S - THOMSON 1 • 3 - ( £=> 2N5301/02/03 2N4398/99/5745 3GE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N5301/2/3, are silicon epitaxial-base NPN transistors in Jedec TO-3 metal case. They are in­

2N5303

Abstract: 2N5301 2N5302 2N4398 2N4399 2N5745 2N5301-3 n439
Contextual Info: D Q 5 ' ì 3 S tl S C S -T H O M S O N [ « ^ E lE O i r i ® i a O i S 6 S- THOMSON 1 • 2 N 5 3 0 1 /0 2 /0 3 2 N 4 3 9 8 /9 9 /5 7 4 5 3GE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N5301/2/3, are silicon epitaxial-base NPN transistors in Jedec TO-3 metal case. They are in­

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

2SC1064

Abstract: 2SA717 ci pc 123
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

BLY88C

Contextual Info: ^53*131 0 0 2 = ^ 2 SO? • APX BLY88U/01 b'lE » N AMER PHILIPS/DISCRETE J V V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

RH1086M

Contextual Info: Lirm TECHNOLOGY RH1086M Low Dropout Positive Adjustable Regulators D C SC M PTIOn a b s o lu te The R H 10 8 6 M is designed to provide 0 .5 A fo r the H package and 1 .5 A fo r the K package with higher efficiency than currently available devices. All internal circuitry is