2SB1086A
Abstract: 2SD1563A
Text: Inchange Semiconductor Product Specification 2SB1086A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563A ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency
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2SB1086A
O-126
2SD1563A
-120V;
2SB1086A
2SD1563A
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2SB1086
Abstract: 2SD1563
Text: JMnic Product Specification 2SB1086 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563 ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency power amplifier applications
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2SB1086
O-126
2SD1563
-100V;
2SB1086
2SD1563
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2SB1086
Abstract: 2SD1563
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1086 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1563 APPLICATIONS ·Designed for low frequency power amplifier applications.
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2SB1086
-120V
2SD1563
-100V;
2SB1086
2SD1563
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2SB1086A
Abstract: 2SD1563A
Text: JMnic Product Specification 2SB1086A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563A ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency power amplifier applications
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2SB1086A
O-126
2SD1563A
-120V;
2SB1086A
2SD1563A
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nec 2sd381
Abstract: TIP65 MJ4361 2SD608A 2SD382 2SD1459R SD1478 idc2073
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2SD1080 2SD1562 2SD1562 2SD1763 2SD1763 2SD1953 40349 40349L 40349S 40349Vl 40349V2 40349V2 IDC2073 2SC1448 KSC2073 2SC1669 2SC1669 2SC1669R ~~g~~~~o 35 40 2SD1459Q 2SD1459R 2SC1669Y 2SD608 2SB1086A
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2SC522
2N1482
BDC01D
2SD381
2SD382
2SB1086
nec 2sd381
TIP65
MJ4361
2SD608A
2SD1459R
SD1478
idc2073
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2SD1563A
Abstract: 2SB1086A
Text: SavantIC Semiconductor Product Specification 2SD1563A Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SB1086A ·Wide area of safe operation ·High breakdown voltage :BVCEO=160V min APPLICATIONS ·For low frequency power amplifier
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2SD1563A
O-126
2SB1086A
2SD1563A
2SB1086A
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2SB1086
Abstract: 2SD1563
Text: SavantIC Semiconductor Product Specification 2SB1086 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD1563 ·Low collector saturation voltage ·Large current capability APPLICATIONS ·Designed for use in low frequency
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Original
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PDF
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2SB1086
O-126
2SD1563
-100V;
2SB1086
2SD1563
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2SB1086A
Abstract: 2SD1563A
Text: SavantIC Semiconductor Product Specification 2SB1086A Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD1563A ·Low collector saturation voltage ·Large current capability APPLICATIONS ·Designed for use in low frequency
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Original
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PDF
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2SB1086A
O-126
2SD1563A
-120V;
2SB1086A
2SD1563A
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2SB1086
Abstract: 2SD1563
Text: Inchange Semiconductor Product Specification 2SB1086 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563 ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency
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Original
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PDF
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2SB1086
O-126
2SD1563
-100V;
2SB1086
2SD1563
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Untitled
Abstract: No abstract text available
Text: 2SB1086 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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2SB1086
Freq50M
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SA1015
Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Text: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A
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2SA1358
2SA1096
2SB1086
2SA934
2SA1015
2SB1041
2SA935
2SA934
2SA854
2SA933
2SA1358
2SA1096
2SA1309A
2SA1339
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Untitled
Abstract: No abstract text available
Text: 2SB1086A / T ransistors PNP y ' J ^ > fiH ? l& tS ^ iifllffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ^i-}fi\f>±0/D im en sio n s U n it: mm 1) m M I Z T & Z (B V c e o = -1 6 0 V )„ 2) A s o * > 'E : < a i c ? i t 'o 3) 2SD1563A£ □
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2SB1086A
2SD1563A£
2SD1563A.
O-126
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Untitled
Abstract: No abstract text available
Text: Iv 7 > y ^ £ /Transistors 2SB1086 PNP v U n > h 7 > v 'X ^ 2 S B 1 8 6 I S J i i l f c l ^ M / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • 1 5 \t ii0 /D im e n s io n s Unit : mm) (B V c e o = - 1 2 0 V ) o 2) 3) 2 S D 1 5 6 3 t z i> y U T ' * 5 „
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2SB1086
2SD1563.
2SB1086
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Untitled
Abstract: No abstract text available
Text: F ~7 > v ^ $ /Transistors 2 S D 2SD1563A 1 5 6 3 A ^ ^ ^ v t v - ^ npn Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • ^ /D im e n s io n s U n it: mm (BVCEO= 160 V ) o 2) A S O ^ K < « a i ; ? l i t ' 0 3) 2SB1086A £ 3 > ') X' & -5 „ 4) S fc ift& 'v W K tttt
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2SD1563A
2SB1086A
2SB1086A.
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2sc4137
Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Text: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638
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7fi20W
O-126,
O-126FP
O-126
O-126FP
JO-126FP
2SB1007
2SB1309
2SB1009
2sc4137
TO126FP
2SB1423
2SB1311
2SD1379
2S02166
2SA1775
to-126fp
2SB1086A
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2SB1086
Abstract: 2SD1563 C80l
Text: ROHM CO L T D 4 0 E D m T f l a f l ' m 0 0 0 5 5 4 S N 7 > y 7 > $ /T ransistors T E 3 RHN 2SB1086 - . " "• 7 = 3 2 - 1 7 PNP h T svW t ìS M ^ J H I f il/ L o w Freq. Power Amp. x & * V 7 V 7 \s- M Epitaxial Planar PNP Silicon Transistor
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000554S
2SB1086
12jJg|
-120V
2SD1563i
-120V
2SD1563.
O-126
000SS47
2SB1086
2SD1563
C80l
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e50p
Abstract: 2SB1086A 2SD1563A
Text: ROHM CO LTD S "7 /Transistors ?aEflcm MOE D □DDSS4fl S E3RHM 2SB1086A -T - 3 3 - 1 7 T M $ * y T V j \ s - - m PNP y ' J □ > b 7 > y * $ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • 4’i-Ji2‘^'>£|5]/''Dimensions U n it : mm)
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2SB1086A
-T-33-Ã
-160V
2SD1563AÂ
-160V
2SD1563A.
O-126
T-33-77
e50p
2SB1086A
2SD1563A
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2SB1099
Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
Text: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103
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2SB1072L
2SB1072S
2SB1073
2SB1075
2SB1076M
2SB1077
2SB1078K
2SB1099
MP-45)
2SB1100
2SB1099
2SD1491
2SB1100
2sb111
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1086 1
Abstract: No abstract text available
Text: h "7 > i/7, $ /Transistors 2SB1086 2SB 1086 ltd ' t t v T i V f y - m PNP y ' j 3 > h 7 > y Z $ Epitaxial Planar PNP Silicon Transistor f i } j S l * l S liffl/L o w Freq. Power Amp. • f tJ f i'iiiE I /D im e n s io n s U n it: mm 1) a B E t 'i.5 (B V c e o = -1 2 0 V )o
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2SB1086
21Colle2
1086 1
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2SD1563A
Abstract: 2SB1086A
Text: h 7 > V '^ £ / T ransistors 2SD1563A NPN y U = i> h -7 > y X ^ 1SÜ Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor 2SD1563A I J S f J I I T i f c * B V c e o = 1 6 0 V o 2) A S O A i j £ < « * l - 5 i ^ ' o 3) 2SB1086A £ n > 7 'J ? & 3 0 4)
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2SD1563A
2SB1086A
2SB1086A.
O-126
-120V
2SD1563A
2SB1086A
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2SA1015
Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
Text: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^
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SA1015
2SA385
2SA715
2SB941
2SB1064
2SA1015
2SA673
2SA1015
2SA1358
2SA965
2SB1212
2SB560
2SA934
2SA985 NEC
2SA1096
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SS2205
Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
Text: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3
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SS2205
UN411H
RT1P234S
DTA123YS
2SA1781
2SA1162
2SB736
2SB709A
2SA1235
2SA1753
SS2205
2SA1628
2SB814
HSI 527
2SA1284
2SA1178
2SA1283
2SA1586
2SB1043
2SA934
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Untitled
Abstract: No abstract text available
Text: h ~ 7 > y X £ /Transistors 2SD 1563 2SD1563 i tf£=*•'> npn v';=i>h7>vx^ 15Jil}J& 1i^*ilN lffl/Lo w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • VI->4K'.V^~r • fl-JK\b£0/Dim ensions Unit: mm 1) R /± T <fc-5 (BVceo= 120V)o 2) ASOA'-l£<«St;^l'0
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2SD1563
15Jil
2SB1086Â
2SB1086.
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