108NS Search Results

Ultra fast diode

Contextual Info: Advance Technical Information IXYH20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

IXYP20N120C3

Contextual Info: Advance Technical Information IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 1200V 20A 3.4V 108ns TO-263HV (IXYA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH20N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP20N120C3 IXYH20N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: 1200V XPTTM IGBT GenX3TM w/ Diode IXYT20N120C3D1HV High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 1200V 17A 3.4V 108ns TO-268HV Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings

IXYH20N120C3D1

Contextual Info: IXYH20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 17A 3.4V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M

2901c

Abstract: processor Am2901 2901B AM2902 i345 AM-201C
Contextual Info: Am2901B/Am2901C A m 2 9 0 1 B /A m 2 9 0 lC Four-Bit Bipolar Microprocessor Slice DISTINCTIVE CHARACTERISTICS Left/right shift Independent of ALU Add and shift operations take only one cycle. Four status flags Carry, overflow, zero, and negative. Flexible data source selection ALU data is selected from five source ports for a total of

2901c

Abstract: amd 2901 alu D-40 i5 instruction CD004110 am2902
Contextual Info: 3L06ZUJV/aL06ZUJV A m 2 9 0 1 B /A m 2 9 0 lC Four-Bit Bipolar Microprocessor Slice DISTINCTIVE CHARACTERISTICS L e ft/rig h t shift independent of ALU Add and shift operations take only one cycle. Four status flags Carry, overflow, zero, and negative. Flexible data source selection ALU data is selected from five source ports fo r a total of

g20n60

Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a
Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

VG46VS8325

Abstract: ic 3645 sh xaxs
Contextual Info: VG46VS8325 131,072 x 32 x 2-Bit CM O S Synchronous Graphic RA M Preliminary Pin Assignment Top View Features • Fast access time from clock: 8/1Ons • Fast clock rate: 100/83MHz • Fully synchronous operation • Internal pipelined architecture • Dual internal banks(128K x 32-bit x 2-bank)

relay 12v 1c/o

Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 HGTG20N60C3
Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S in t e r r ii J a n u a ry . m Data Sheet 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

Contextual Info: KM4132G271 CMOS SGRAM 128K X 32Bit X 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS

concurrent RDRAM 72

Abstract: Direct RDRAM clock generator RDRAM Reference Manual pin diagram ic 7424 concurrent rdram
Contextual Info: 4-Megabit RDRAM 512K x 9 Description System Benefits The 4-M egabit Rambus DRAM (RDRAM™) is an extremely-high-speed CM OS DRAM organized as 512K words by 9 bits and capable of bursting up to 256 bytes of data at 2 nanoseconds per byte. The use of Rambus Signaling Logic (RSL) technology makes this

FRL-264 D048

Abstract: D058
Contextual Info: TO SH IBA THLY648031FG-10.-12 TENTATIVE TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608 W O R D S X 6 4 BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THLY648031FG is a 8,388,608 words by 64 bits Synchronous DRAM module which assembled 8 pcs of TC59S6408FT on the printed circuit board.

20N120C3

Contextual Info: IXYJ20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM

l0830

Abstract: LC83010 PGA100 sick acc 18.432MHZ oscillator
Contextual Info: a frJ -K No. EN3606 / No. 3608 LC83010 SA iYO CMOS LSI' AU D IO D IG IT A L SIGNAL PROCESSOR < 1, Overview The LC83010 Is a single-chlp digital signal processor DSP , It is designed for use in the application fields such as a digital processing of audio signals.

EM635327Q-10

Abstract: EtronTech EM635327Q EM635327Q-12 EM635327R-10 EM635327R-12 EM635327TQ-10 EM635327TQ-12 EM635327TR-10 EM636327TR-12 EM635327
Contextual Info: EtronTech EM635327 256K x 32 High Speed Synchronous Graphics DRAM SGRAM Preliminary (10/'97) Features • • • • • • • • • • • Fast access time from clock: 6.5/7.0/7.5/8.5ns Fast clock rate: 125/110/100/83MHz Fully synchronous operation

toshiba toggle mode nand

Abstract: Toshiba MLC flash hynix nand flash nand flash HYNIX MLC hynix MLC nand flash toggle mode nand samsung hynix nand PROGRAMMING reset nand flash HYNIX PL-2520 flash to mp3
Contextual Info: PL-2520 Chip Rev A Advanced Hi-Speed USB Flash Disk Controller Product Datasheet Document Revision: 1.1 Document Release: December 25, 2008 Prolific Technology Inc. 7F, No. 48, Sec. 3, Nan Kang Rd. Nan Kang, Taipei 115, Taiwan, R.O.C. Tel: 886-2-2654-6363

Contextual Info: Preliminary KM4132G271 CMOS SGRAM 128K x 32 x 2Bit Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply The KM4132G271 is 8,388,608 bits synchronous high data • LVTTL com patible with multiplexed address rate Dynamic RAM organized as 2 x 131,072 words by 32

Contextual Info: Advance Technical Information IXYJ20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

g20n60c3d

Abstract: g20n60c3d equivalent HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3
Contextual Info: HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

A9 npn

Contextual Info: NN5216165 series CMOS 16Mbit 524,288 words x 16 bits x 2 banks Synchronous Dynamic RAM Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 524,288 words x16bits x 2banks. This product features a fully synchronous operation referenced to a positive edge of dock input. The read/write