10AIA Search Results

LM373

Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
Contextual Info: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.

CA314E

Abstract: CA3146E RCA CA3183E CA-3018 ca3118 CA3118AT CA3146AE 3183a CA3146E two transistor forward
Contextual Info: G E SOLID STATE Dl D E I 3fl75Clfll G014b3fc> 1 | Arrays CA3118, CA3146, CA3183 “T * H 3 * Z S High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ V g £ matched + 5m V max. ■ Operation from DC to 120 MHz CA 3118AT, T ; CA 3146A E, E

Contextual Info: ., One. <£emL-£on Luatoi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973 376-2922 (212)227-6006 FAX: (973) 376-8960 2N3962 U.SA PNP SILICON TRANSISTOR DESCRIPTION 2N3962 is PNP silicon planar transistor designed for AF small signal amplifier stages.

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

k B688

Abstract: B688 8a223 BAR223-25 F 13000 B427 B427-10 B427-15 B587 B588
Contextual Info: is EDAL INDUSTRIES INC »EjamsTik Qoooan i I D 7~- ¿ 3-05- EDAL Series B427, BA223, B587, B588 Compact tubular construction and flexi­ ble leads facilitate circuit mounting, provide excellent thermal conductivity and eliminate sharp edges to reduce corona common to

2sc-1625

Abstract: 2sa814
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA bFJtDTTSSD DDD7a3b h Ib DISCRETE/OPTO 2 S A 8 1 4 ' •2 S A 8 1 5 i 56C 07236 SILICON PNP EPITAXIAL BASE MESA TYPE Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. ,10.3MAX., 0a£±O,Z DRIVER STAGE AMPLIFIER APPLICATIONS.

2SA814

Abstract: 2SA815 2SC1624 2SC1625 AC75
Contextual Info: TOSHIBA {DISCRETE/OPTO! Q 0 97 25 0 - TOS HIBA D I S C R E T E / O P T O 2SA814 2SA815, i d F | ‘1 G ,1 7 S S Q 1 í 56C 07 23 6 d DDOTaBt, T - ^ ~ S IL IC O N PNP E P IT A X IA L BASE M E S A TYPE \\ - U nit MEDIUM POWER AMPLIFIER APPLICATIONS. in mm

Contextual Info: 7b TOSHIBA { D I S C R E T E / OPTO> 9 9 7 2 5 T O S H I B A C D I S C R E T 2SD1052 E / O P T O DE J l G T 7 a S G b o L Ö '7 8<t 9 □□□7ñ4T L, J $ - af ü SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS .

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

2SC1913

Abstract: 2SA913 AW14 2SC1913A 2SA913A
Contextual Info: 2SC1913, 2SC1913A 2SC1913, 2SC1913A NPN x tf ^ '> ij 13 > 2SA913, 2SA913A 7 JUZf l* NPN Epitaxial Planar Power Amplifier £ n > 7 ° ] /• > $ U / Complementary Pair with 2SA913, 2SA913A Unit I mm 10.5 + 0.5 .£ O m 9.8max. 7 V 7.6min. +1 • ¥ f iS /F e a tu re s

WF VQE 22 c

Abstract: CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE
Contextual Info: G E SOLID STATE Dl D E | 3fl75Clfll G014b3fc> 1 | A rra y s ' CA3118, CA3146, CA3183 T 'H ^ ZS High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ Vgg matched + 5mV max. ■ Operation from DC to 120 MHz CA3118AT, T; CA3146AE, E

NJM4250

Contextual Info: ju-POW ER OPERATIONAL AMPLIFIER < ' NJM4250 T he NJM4250 is extrem ely versatile program m able m onolithic operational amplifiers. A single external m aster bias cur­ rent setting resistor program s the input bias current, input offset current, quiescent pow er consum ption, slew rate, input

2N914

Abstract: bi 370 transistor transistor 2N914 bi 370 transistor e transistor eb 2030
Contextual Info: 2N914 SILICON PLANAR NPN SATURATED LOGIC SWITCH AN D V H F AM P LIFIE R The 2N 914 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is p rim a rily a universal switch but it is also an excellent high speed, high gain logic and

1N5711 JANTX

Abstract: n5711 C68001 1N5711 cd 1031 jan 1n5711 C-68001
Contextual Info: SCHOTTKY SW ITCHING DIODE HEWLETT PACK ARD MILITARY APPROVED M IIL -S -1 9 5 0 0 /4 4 4 COMPONENTS JAN 1N5711 JANTX1N5711 JANTXV1N5711 Features Description /Applications Maximum Ratings at T h e J A N S e rie s 1 N 5 7 1 1 is a n e p ita x ia l, p la n a r p a s s iv a te d

L7611

Abstract: L7612 icl7621 equivalent ICL7614 L76XX Hearing AIDS ic
Contextual Info: yki>jxi>ki Single/Dual/Triple/Quad Operational Am plifiers - - -General Description - Features The ICL761X/762X/763X/764X family of monolithic CMOS op amps combine ultra low input current with low

521-9165

Abstract: DDD3532 521-9173 521-9174
Contextual Info: Tö 2812672 DI AL IGHT C O R P 9 DE J a f lia b? a DDD3232 T X ' ~ <f t w ^ r S o lid S t a t e LED L a m p s L o w P ro file T - 1 3/f - w it h D iffu s e d Lens 521- 9165, 521- 9166, 521- 9180 , 521- 9173, 521-9174 52 1-916 5521-9166 — 521-9180 — 521-9173 —

L7621

Abstract: ICL7106 PCB L7641 ICL76XX
Contextual Info: > k i > j x i y i / i S ingle/D ual/Triple/Q uad Operational Am plifiers The ultra low bias c u rre n t o f 1 pA makes th is fa m ily of op am ps ideal fo r long tim e con stant integrators, picoam meters, low d roop rate s a m ple/ho ld am plifiers and oth er

2907AR

Abstract: IS955 2907a transistor
Contextual Info: SEC ELECTR0HDEVICE S ILIC O N T R A N S IS T O R S NTM 2907A, NTM 2907AR GENERAL PU RPO SE A M PLIFIER ,H IG H SPEED SW ITCH IN G PNP SILIC O N EPITA X IA L T R A N SIST O R "M IN I MOLD T Y P E " DESCRIPTION The N TM 2907A , N TM 2907A R are PNP Transistor, designed fo r general purpose am plifier and high speed switching