B427 Search Results

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

2SK786

Abstract: fsjc EER 35 kd
Contextual Info: E m C ELECTRONICS T| b42752S INC ÜDiflT34 98D 18934 D T - 3 9 -1 3 =J . P R E LIM IN A R Y S P E C IF IC A T IO N F A S T S W IT C H IN G N -Ç H A N N EL S IL IC O N PO W ER Absolute Maximum Rat¡ngs Ta=25*C 800V VOSS Drain to Source Voltage ± 2j V vcss

2SC3542

Abstract: 2SC3541 NEL1320 NEL132081-12 1300 3d NEL130681 NEL1300 NEL130681-12 CNC12 NEL1306
Contextual Info: NEC/ CALIFORNIA NEC SbE J> m b427MlM 000254*=! 731 » N E C C 'T 'T b - W CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL132081-12 OUTLINE DIMENSIONS FEATURES • H IG H LINEAR PO W ER AN D GAIN: NEL1306: P u b = 38 dBm, G iob = 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB = 6 dB TYP

PC659

Abstract: IPC659G
Contextual Info: N E C ELECTRONICS INC SEC / ELECTRON DEVICE 30E D • b427S2S G03047b T ■ DATA SHEE-T Preliminary BIPOLAR ANALOG INTEGRATED CIRCUIT / / _ _ _ _ _ Ä / / P C 6 5 9 8 BIT A/D C O N V E R T E R FOR V ID EO P R O C E S S IN G

Contextual Info: . N E C ELECTRONICS INC 3QE D • b427525 G 0 2 ci50,:i 7 ■ T ^ " 4 i *“ W PHOTO TRANSISTOR _ P H 1 0 6 PHOTO TRANSISTOR The PH 106 is a photo transistor in a plastic molded package, and PACKAG E DIMENSIONS very suitable for a detector of a photo interrupter.

UPD41258G10

Abstract: UPD41254 upd41256l
Contextual Info: NEC N E C ELECTRONICS INC 72C D • b427525 DDObMMl 3 ■ SURFACE MOUNT DEVICES Introduction M em ory Surface mount technology SMT is an idea whose time has come. NEC anticipated the current trend and now offers an exceptionally broad choice of com­ ponents in suface mount packages. Four factors

Contextual Info: 30E » • b427sas ooa^mb i ■ N E C LIGHT EMITTING DIODE ELECTRONICS INC J _ NDL5310P 1 300 nm O PT IC A L F IB ER C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LED M O DULE D ESC RIPTIO N NDL5310P is a 1 300 nm InGaAsP double heterostructure LED with fiber pigtail. It can achieve high optical output power

dt5 tuner module

Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
Contextual Info: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Contextual Info: hEE D • b427SeS GG37473 Ü2T « N E C E LIG H T EM ITTING DIODE N E C NDL4105B ELECTRONICS INC 850 nm O P T IC A L FIBER C O M M U N IC A T IO N S AIGaAs LIGHT EMITTING DIODE D E S C R IP T IO N N D L 4 1 0 5 B is an A IG a A s double heterostructure lig h t e m ittin g diode.

Contextual Info: bSE D • b427S2S GG37471 257 « N E C E LIGHT EM ITTING DIODE NDL4105A 850 nm O P T IC A L FIBER C O M M U N IC A T IO N A IG aA s LIGH T E M IT T IN G D IO DE N E C ELECTRONICS INC D E S C R IP T IO N N D L 4 1 0 5 A is an AtG aAs light emitting diode, especially designed for an 850 nm light source of optical fiber communications

Contextual Info: 30E D • b427SE5 005^424 fi ■ / N E C ELECTRONICS INC LIGHT EMITTING DIODE NDL5313P 1 300 nm O PT IC A L F IB ER C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LED M O DULE D E S C R IP T IO N P A C K A G E D IM E N S IO N S in m illim e te rs

Contextual Info: EC ELECTRONICS INC ST D b427SS5 DDG5S4Ö S T-41-07 I NECE NEC Fiber Optic Devices OD-8363-IDI LED Module 1.3^m OD-8363 is designed to couple LED (Light Emitting Diode) output light to optical fiber through connector. FEATURES APPLICATIONS • High coupling efficiency from LED to

4070N

Contextual Info: b2E D • b427525 0G37bb4 TÔT « N E C E N E C PHOTO DIODE ELECTRONICS INC / N D L5406C 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS 2 7 0 X 3 3 0 jum InGaAs PIN PHOTO DIODE D E S C R IP TIO N N D L 5 4 0 6 C is a 270 nm x 3 3 0 /¿m InGaAs PIN p h o to diode fo r a lig h t detector. It covers th e wavelength range between

Contextual Info: m I - - N E C - - ELECTRONICS INC .- - 30E D • b427S2S ODaifllD 2 ■ PHOTO INTERRUPTER P S 5002LR PHOTO 1C INTERRUPTER D E S C R IP T IO N P A C K A G E D IM E N S IO N S Unit : m m The PS5002LR ph oto in terru p te r m odule is a

Contextual Info: 30E D • b427525 002^252 S / N EC LASER DIODE ELECTRONICS INC NDL5050A 1 550 nm O P TIC A L FIBER COM M UNICATIONS InGaAsP DOUBLE HETERO STR U C TU R E LA SER DIODE DESCRIPTION NDL5050A is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DC*

Contextual Info: N E C ELECTRONICS INC NEC NEC Electronics Inc. 3GE D • b427525 005S3Tt T ■ //PD75328/P328 4-Bit, Single-Chip Microcomputers with LCD Controller/Driver and A / D Converter M Description T h e ^ P D 7 5 3 2 8 and//PD75P328 are high-perform ance, sin g le -ch ip C M O S m icrocom puters that contain a

PS2506-2

Contextual Info: E C EL EC TRO NICS INC 30E D • b427525 OGETtilQ 7 ■ ^ - T-41-83 PHOTO COUPLERS PS2506-lPS2506-2,PS2506-3lPS2506-4 M U LTI PHOTO CO UPLER HIGH ISOLATION VOLTAGE AC INPUT,DARLINGTON TRANSISTO R TYPE

FIP11B13

Abstract: FIP6A13 FIP11B b427525 FIP13Y8 FIP8B11
Contextual Info: b427525 DDHflin 73b « N E C E Table 4 For ECR and Others Type No No. of Digits S!MMI^SSiiâB8àiSâSs!Siiâ$jiii»fi6ieÄMliSSi' Digits x lines S*. !»•».» „ *“ Fig. No. C.H c .w (mm) (mm) P.H (mm) P.L (mm) P.T (mm) L.P (mm) L.L (mm) I FIP6A13C

Contextual Info: N E C ELECTRONICS INC b5E D • b42752S 003Ô07Û T7S H N E C E DATA SHEET |\|E C Z PHOTO DIODE NDL5104P, NDL5104P1 E U C T H O N D E V IC E 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>1 0 0 am G ERM ANIUM AVALAN CH E PHOTO DIODE M OD ULE D E S C R IP T IO N

Contextual Info: 3GE D • b427S2S GOETMlñ 2 ■ S N E C ‘ E L E C T R O N I C S INC LIGHT EMITTING DIODE /_NDL5311P 1 300 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LED M O DULE D ESC RIPTIO N NDL5311P is a 1 300 nm InGaAsP double heterostructure L E D DIP module. It can achieve high optical output power from

TO18 package LED 1300 nm

Contextual Info: N E C b5E D ELECTRONICS INC • b427525 G03Ö150 777 » N E C E DATA SHEET NEC LIGHT EMITTING DIODE N D L5302L1 ELECTRON DEVICE 1 300 nm OPTICAL FIB ER COMMUNICATIONS InGaAsP LIGHT EMITTING DIODE DESCRIPTION NDL5302L1 is an InGaAsP double heterostructure 1 300 nm LE D . It is designed for medium distance optical fiber communi­

Contextual Info: 6427S25 N E C D Ë J b427SES E L E C T R O N IC S DD11DD1 IN C 980 19009 D T - 3 «7-/3 1 |~ M 0S F I E L D E F F E C T T R A .V S I S T C K ELECTRON DP/ICE FAST SW IT C H IN G N - "C H A N N E L S I L I C O N POWER WOS FET PA CK A G E DIMENSIONS Features

SFR450H

Abstract: NEC car radio 4.5-Mhz Murata sfr450h
Contextual Info: • b427S25 00m 4b5 73b HNECEPRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT / P C 2 5 3 3 AM TUNER FOR ELECTRONIC-TUNING CAR RADIO The /xPC2533 is an 1C that has been developed as an AM tuner for car stereo and car radio. It employs double superheterodyne configuration of up conversion type (IF1 « 10.71 MHz, IF2 - 450 kHz .

Contextual Info: b2E » • N E C b427525 D037b4ci b72 W N E C E PHOTO DIODE ELECTRONICS INC / NDL5200 OPTICAL FIBER C O M M U N IC A TIO N S Ge PHOTO DIODE DESC R IPT IO N N D L 5 2 0 0 Germ anium Photo diode is designed for a detector o f long wavelength fiber transm ission systems.