10G131 Search Results

10G131

Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode

Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)

10g131

Abstract: GT10G131 RG110 ic 3 51 2A
Contextual Info: 10G131 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT 10G131 ○ 直列式自動調光ストロボ用 • 薄型面実装外囲器です。 単位: mm : 樹脂厚み 1.5 ± 0.2 mm • 第 5 世代 トレンチゲート構造 品です。

10G131

Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)

Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)

GT10G131

Abstract: 10G131
Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode

10g131

Abstract: ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170
Contextual Info: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Unit: mm Strobe Flash Applications • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode