10GHZ DRO Search Results

Contextual Info: SUF-4000 0.15GHz to 10GHz, Cascadable pHEMT MMIC Amplifier SUF-4000 Proposed 0.15GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: 0.88mmx0.80mm Product Description Features RFMD’s SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15GHz to 10GHz. This pHEMT FET-based amplifier uses

pHEMT 6GHz

Abstract: InP transistor HEMT SUF-4000 10GHz mixer 4 TO 6GHz RF mixer
Contextual Info: SUF-4000 SUF-4000 0.15GHz to 10GHz, Cascadable pHEMT MMIC Amplifier 0.15GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: 0.88mmx0.80mm Product Description Features RFMD’s SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15GHz to 10GHz. This pHEMT FET-based amplifier uses

low-noise amplifier 10GHZ

Contextual Info: SUF-2000 0.2GHz to 10GHz, Cascadable pHEMT MMIC Amplifier SUF-2000 Proposed 0.2GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package:0.88mmx0.86mm Product Description Features RFMD’s SUF-2000 is a monolithically matched broadband high IP3 gain block covering 0.05GHz to 10GHz. This pHEMT FET-based amplifier uses

10GHz filter

Abstract: iwaki narrowband optical filter 25GHz-channel DWDM 25ghz
Contextual Info: Data sheet Three-Port Add/Drop Multiplexer Family 25GHz Channels terra-Q 25 The Bookham Technology terra-Q narrowband filter family is based on thin-film interference filter technology. Features • ITU and Custom Wavelengths • 10GHz Clear-Channel Passband

HFA3101

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
Contextual Info: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

kf 8715

Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
Contextual Info: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

H3101B

Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration
Contextual Info: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

transistor npn c 9012

Abstract: HFA3101BZ 5GHz band pass filter
Contextual Info: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

Contextual Info: SRF11B09-010-1 SRF11B09-010 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5371, REV - 8GHz to 10GHz Low Noise Amplifier Features •8 GHz to 10 GHz Frequency Range Typical Noise Figure < 1.2 dB Typical Gain 25 dB Gain Flatness < ± 1.5 dB

HFA3101

Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair
Contextual Info: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

kf 8715

Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Contextual Info: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI

3101-B

Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
Contextual Info: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •

Harris HFA3101 5 GHz Gilbert cell array

Abstract: Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B HFA3101 reactance modulator HFA3101B96
Contextual Info: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array August 1996 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI

rf mems switch

Abstract: full automatic Washing machines circuit diagram 2SMES-01-EVBA at10GHz
Contextual Info: RF MEMS Switch 2SMES-01 Surface-mount ,10GHz Band typical , Miniature, SPDT - NO, RF MEMS Switch • Superior high-frequency characteristics at 10 GHz typical / 8 GHz rated (50Ω) ƒ Isolation of 30 dB ƒ Insertion loss of 1dB ■ Ultra-miniature 5.2x3.0×1.8 mm (L×W×H).

JXWBHP-M818C

Abstract: FR2 PCB JXWBHP-M0518C m2068 M50C JXWBHP-M83 10GHz RF mixer
Contextual Info: Mixers The content of this specification may change without notification 7/01/09 Mixers Broadband 0.01 to 20GHz Coaxial JXWBHP-MY82 Drop-in package JXWBHP-M046 (Drop-in package) JXWBHP-MY82C (Connector package) JXWBHP-M046C (Connector package) Items LO(RF) (GHz)

Contextual Info: BFP410 Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz

1r100

Abstract: DRT193U040 38T1 VCO 5GHz DRT163U040 Microwave oscillators DRR020 DRD046U DRD051U TVRO
Contextual Info: This is the PDF file of catalog No.O95E-7. No.O95E7.pdf 00.7.21 Dielectric Resonator RESOMICS RESOMICS® Murata Manufacturing Co., Ltd. Cat.NoO95E-7 This is the PDF file of catalog No.O95E-7. Index TE mode Resonator U Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  6

bfp410

Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
Contextual Info: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package

DRZ006ZT

Abstract: DRT107-DRT210 VCO 9GHZ 10GHZ VCO 10GHZ oscillator DRT051-DRT099 dielectric resonator DRR020 1G200 DRD046-DRD107 DRD117-DRD347
Contextual Info: !Note Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specificaions before ordering.

Contextual Info: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package

temex ceramics

Contextual Info: DIELECTRIC RESONATORS Operating frequencies in wireless communications have shifted towards high frequency band, and thus frequencies higher than 1 GHz are now commonly utilized. In addition, the microwave frequency spectrum becoming severely crowded and sub-divided into many different frequency bands,

3g phone CIRCUIT diagram

Abstract: Primarion RF TRANSISTOR 10GHZ low noise microprocessor. FOR DEAL 3g transistor use of microprocessors in cell phones
Contextual Info: System Approaches to Power Management Dennis Monticelli National Semiconductor 2900 Semiconductor Drive Santa Clara, CA 95051 Abstract – The performance demands of new systems are forcing new approaches to solving complex power management problems. Solutions will require a system approach where

mmic era3

Contextual Info: AMPLIFIERS Designer's Kit K1-ERA+ MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! DC to 8GHz ERA+ Features • Wideband, 50Ω • Up to 13.0dBm typ. output power • Low thermal resistance • Miniature microwave amplifier • Plastic drop-in package All models are

MIL C 38999

Abstract: jam nut 38999
Contextual Info: Call 800-678-0141 H 38999 Product Data Sheet PDS-208-9 A connector that has the connections. High Density The HD38999 family of connectors was designed to work with existing mil-specified 38999 shells. To the end users familiar with standard 38999 connectors, this family