BGA420 Search Results

Contextual Info: Package outline BGA420: plastic ball grid array package; 420 balls; body 23 x 23 x 1.55 mm D SOT847-2 B A D1 ball A1 index area A2 A 1 A E E1 detail X C e1 e 1/2 e ∅v ∅w b AB AA Y W V U T R P N M L K J H G F E D C B A M M y y1 C C A B C e e2 1/2 e 1 shape

Contextual Info: Package outline BGA420: plastic ball grid array package; 420 balls SOT1136-1 B D D1 A ball A1 index area E1 A E A2 A1 detail X e1 e 1/2 e ∅v ∅w b AB AA Y W V U T R P N M L K J H G F E D C B A C C A B C y y1 C e e2 1/2 e 1 3 5 7 9 11 13 15 17 19 21 shape

A03 transistor

Abstract: 3V02 88-FF
Contextual Info: S IE M E N S BGA420 Si-MMIC-Amplifier in SIEGET 25-Technoiogy Preliminary Data # • • • # # Cascadable 50 Q-Gain Block Unconditionally stable Gain |s21f= 1 3 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz V d=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

420 MMIC

Abstract: 100pf a02 Transistor rf SIEMENS CAPACITOR simmic amplifier siemens capacitor 100pF 0603 datasheet BGA420 C1-100pF
Contextual Info: Application Note No. 027 Discrete & RF Semiconductors G. Lohninger A 1.9 GHz Low Noise Amplifier board using Si-MMIC BGA420 This application note provides general information, pcb layout and list of components, circuit diagram and measured data of a BGA420-amplifier board.

Contextual Info: Package outline BGA420: plastic ball grid array package; 420 balls; body 23 x 23 x 1.7 mm D SOT847-1 B A D1 ball A1 index area A2 A 1 A E E1 detail X C e1 e 1/2 e ∅v ∅w b AB AA Y W V U T R P N M L K J H G F E D C B A M M y y1 C C A B C e e2 1/2 e 1 shape

Contextual Info: S IE M E N S Si-MMIC-Amplifier BGA420 in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 n-G ain Block Unconditionally stable Gain |s 21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz Vd=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

PBGA420

Contextual Info: P-BGA420-3535-1.27 5 パッケージ材質 ボール材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 Sn/Pb 4.30 TYP. 1 版/98.9.10

Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD

a03 dbm

Abstract: marking code 8Ff 661 a03 mmic a03 marking A03 BGA420 GPS05605 Q62702-G0057
Contextual Info: SIEM ENS BGA420 S i-M M IC -A m p lifier in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 £2-Gain Block Unconditionally stable Gain |s21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz V d=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

BGA420

Abstract: MS-034 sot847
Contextual Info: Package outline Philips Semiconductors BGA420: plastic ball grid array package; 420 balls; body 23 x 23 x 1.55 mm SOT847-2 B D A D1 ball A1 index area A2 A 1 A E E1 detail X C e1 e 1/2 e ∅v ∅w b AB AA Y W V U T R P N M L K J H G F E D C B A M M y y1 C

INFINEON marking BGA

Abstract: BGA420 t501
Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET  25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz V D = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.3 dB at 1.8 GHz VD

Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD

PBGA420

Contextual Info: P-BGA420-3535-1.27 5 Package material Ball material Package weight g Rev. No./Last Revised Epoxy resin Sn/Pb 4.30 TYP. 1/Sept. 10, 1998

BGA420

Abstract: MS-034 sot847
Contextual Info: PDF: 2004 Feb 12 Philips Semiconductors Package outline BGA420: plastic ball grid array package; 420 balls; body 23 x 23 x 1.7 mm SOT847-1 B D A D1 ball A1 index area A2 A 1 A E E1 detail X C e1 e 1/2 e ∅v ∅w b AB AA Y W V U T R P N M L K J H G F E D C

SF-BGA420B-B-11

Contextual Info: D Package Code: BGA420B C 31.75mm [1.250"] 0.64mm [0.025"] See BGA pattern code to the right for actual pattern layout Y 0.89mm [0.035"] X 31.75mm [1.250"] Top View reference only 1.27mm [0.050"] 2 0.36mm [0.014"] dia. 0.64mm [0.025"] 5.33mm 3.74mm [0.147"]

BGA 420

Abstract: 37265
Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA
Noise figure NF = 2.3 dB at 1.8 GHz 1
Reverse isolation > 28 dB and

BGA420

Abstract: EHA07385
Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA
Noise figure NF = 2.3 dB at 1.8 GHz 1
Reverse isolation > 28 dB and

BGA420

Abstract: E6327
Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA
Noise figure NF = 2.3 dB at 1.8 GHz 1
Reverse isolation > 28 dB and

BGA420

Contextual Info: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.4 mA
Noise figure NF = 2.2 dB at 1.8 GHz 1
Reverse isolation > 28 dB and

bav99

Abstract: BAV-99S-E6327 bav99 infineon
Contextual Info: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W

BFP740 SPICE MODEL

Abstract: BFP740 equivalent BFP740 BGA420 germanium transistor ac 128
Contextual Info: BFP740 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 2 4 a wide range of wireless applications 1 up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

BAT62

Abstract: BAT62-02L BAT62-02W BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S SCD80
Contextual Info: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-09S 6 4 3 1 D 1 2 2 1 D 2 D 1 D 2 2 4 5 D 2 D 1 1 BAT62-07W BAT62-07L4 1 2 3 ESD Electrostatic discharge sensitive device, observe handling precaution!

SMD MARKING CODE 071 A01

Abstract: smd code 38P LGA 1155 PIN diagram MARKING CODE SMD IC A08 L QUAD Aluminum nitride smd marking m05 LGA 1155 Socket PIN diagram pitch 0.4 QFP 256p marking code smd fujitsu Texas Instruments epoxy Sumitomo
Contextual Info: To Top Contents Safety Precautions 1 Introduction to Packages 1.1 Overview 1.2 Package Lineup 1.3 Package Forms 1.4 Package Structures 1.5 How Package Dimensions Are Indicated 1.6 Package Codes 1.7 Marking 1.8 Future Trends in Packages 2 Package Mounting Methods

bfp410

Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
Contextual Info: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package