10GHZ POWER AMPLIFIER Search Results

ATC 600F

Abstract: RO4003 GRM39Y5V104Z25V TC3943 10GHZ GAAS
Contextual Info: TC3943 REV2_20070503 0.5W Single-Bias and Prematched GaAs Power PHEMTs using SMT package FEATURES PHOTO ENLARGEMENT • Prematched for 5~10 GHz • 0.5W Typical Output Power at 5~10GHz • 7dB Typical Linear Power Gain at 10GHz • High Linearity: IP3 = 37 dBm Typical at 5~10GHz

LT5570

Abstract: LT5582 LTC5541 1381j LT5579 LTC5540 LTC5543 LTC5542
Contextual Info: LTC5582 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range Features Description Frequency Range: 40MHz to 10GHz n Linear Dynamic Range: Up to 57dB n Accurate RMS Power Measurement of High Crest Factor Modulated Waveforms n Exceptional Accuracy Over Temperature: ±0.5dB Typ

vco 10GHz

Abstract: 10GHz OSCILLATOR RFVC1801 VCO 5GHz 10GHZ wideband vco mmic
Contextual Info: RFVC1801 RFVC1801 Wideband MMIC VCO with Buffer Amplifier, 5GHz to 10GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHZ TO 10GHZ Package: QFN, 4mmx4mmx1.1mm Frequency and Output Power versus V TUNE VS=5V, T=25°C 12 6 11 Features 5 Evaluation Board 10 4 9

1381j

Abstract: CID05X7R1C104K LT5570 CRCW040268R1FK 1027J11 CRCW04022K00FKEA capacitor 1uF lfgz ltc5582idd#pbf 0402YC101KAT
Contextual Info: LTC5582 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range Features Description Frequency Range: 40MHz to 10GHz n Linear Dynamic Range: Up to 57dB n Accurate RMS Power Measurement of High Crest Factor Modulated Waveforms n Exceptional Accuracy Over Temperature: ±0.5dB Typ

ultrasonic amplifier circuit diagram

Abstract: Ablebond LMA116 162mm
Contextual Info: 2-10GHz MESFET Amplifier Filtronic LMA116 Solid State Features • • • • • • • • • • 4.5dB Typical Noise Figure 15dB Typical Gain 18dBm Saturated Output Power 12dB Input/Output Return Loss Typical 2-10GHz Frequency Bandwidth +8 Volts Single Bias Supply

LT5570

Abstract: LTC5541 LT5579 LTC5540 LTC5543 LTC5542
Contextual Info: LTC5582 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range FEATURES n n n n n n n n n DESCRIPTION Frequency Range: 40MHz to 10GHz Linear Dynamic Range: Up to 57dB Accurate RMS Power Measurement of High Crest Factor Modulated Waveforms Exceptional Accuracy Over Temperature: ±0.5dB Typ

DYNAMIC MEASUREMENT CORP

Abstract: LTC5582 rms detector high Frequency envelope detector rf power detector dynamic range LTE RF Multiband
Contextual Info: News Release ⎜ www.linear.com 40MHz to 10GHz RMS Detector with 57dB Dynamic Range Provides Accurate RF Power Measurement MILPITAS, CA – June 16, 2010 – Linear Technology introduces the LTC5582, a high dynamic range 10GHz RMS detector that sets a new standard in measurement accuracy of RF signals. It

T11G

Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SONET/SDH 10.7Gb/s High GainTransimpedance Amplifier VSC7997 Features Applications • 10GHz Typical Bandwidth • Adjustable Output Offset • High-Gain 5kΩ Differential Transimpedance • -5.2V Power Supply

Contextual Info: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

Contextual Info: HFA3102 Semiconductor Dual Long-Tailed Pair Transistor Array August 1996 Description Features High Gain-Bandwidth Product fy . . . . 10GHz High Power Gain-Bandwidth Product . . 5GHz High Current Gain (h p ^ ). 70 Noise Figure (Transistor).

RFHA

Abstract: RFHA1101
Contextual Info: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

LEE-19

Abstract: LEE-29 LEE-39 LEE-49 LEE-59
Contextual Info: AMPLIFIERS Designer's Kit K1-LEE+ MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW EXPOSED METAL BOTTOM TOP VIEW DC to 8GHz LEE+ Features Wideband, 50Ω Up to +17.3dBm typ.output pwr. • Flat output power • Usability to 10GHz • • • •

FMM3310X

Contextual Info: 10.7Gb/s Trans-Impedance Amplifier FMM3310X FEATURES • • • • • • High Trans-Impedance Gain Typ. 1200Ω Complementary 50Ω Outputs Low Group Delay (<26ps@10GHz) Via Hole Ground Single -5.2V Power Supply With DC Feed Back Circuit DESCRIPTION

Contextual Info: TGA4807 10.7Gb/s Modulator Driver Amplifier Key Features and Performance • • • • • • • Single-ended Input / Output Small Signal Gain 19dB Small Signal Bandwidth 10GHz Wide Drive Range 3V to 11V 25ps Edge Rates (20/80) Power Dissipation 2.25Watts

Contextual Info: RFHA1101 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

0603YC103KAT

Abstract: TGA4807
Contextual Info: TGA4807 10.7Gb/s Modulator Driver Amplifier Key Features and Performance • • • • • • • Single-ended Input / Output Small Signal Gain 19dB Small Signal Bandwidth 10GHz Wide Drive Range 3V to 11V 25ps Edge Rates (20/80) Power Dissipation 2.25Watts

Contextual Info: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB

M1DGAN202

Contextual Info: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB

Contextual Info: 3.3V 10Gbps DIFFERENTIAL LINE DRIVER RECEIVER WITH INTERNAL TERMINATION FEATURES DESCRIPTION 3.3V power supply –3dB bandwidth > 10GHz Gain ≥ 4V/V CML/PECL differential inputs CML outputs Internal 50Ω input termination Internal 50Ω output load resistors

Contextual Info: GaAs MMIC Power Amplifier AM008030WM-BM-R AM008030WM-FM-R March 2011 Rev 1 DESCRIPTION AMCOM’s AM008030WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 23dB gain, and >28dBm output power over the 0.05 to 10GHz band. This MMIC is in a ceramic package with both RF and DC leads

ha6007

Contextual Info: HBH 10.0 – 13.0 GHz Variable Gain Amplifier PRELIMINARY Microwave GmbH HA6007 General Description The HA6007 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier

FMM3307X

Abstract: fujitsu x band amplifiers 100GBS 100GB
Contextual Info: 10.0Gb/s Trans-Impedance Amplifier FMM3307X FEATURES • • • • • • High Trans-Impedance Gain Typ. 1100Ω Complementary 50Ω Outputs Low Group Delay (<18ps@10GHz) Via Hole Ground Single -5.2V Power Supply DC Feed Back Circuit DESCRIPTION The FMM3307X is a Trans-Impedance Amplifier for OC-192 applications.

M203

Abstract: ITAR ha6006
Contextual Info: HBH 10.0 – 13.0 GHz Low Noise Amplifier PRELIMINARY Microwave GmbH HA6006 General Description The HA6006 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier

2SC4873

Abstract: IC 2703 TRANSISTOR 10GHZ TRANSISTOR FOR 10GHz oscillator IS21E
Contextual Info: 2 S C 4 8 7 3 N PN Epitaxial Planar Silicon Transistor U H F ~ S Band low-noise amplifiers and oscillators T E N T A T I VE Features and Applications • Small noise figure: NF=1.4dB typ f=lGHz • High Power Gain : IS21e|* = 15dB typ (f=lGHz) • High cutoff frequency : fI = 10GHz typ