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    Siemens 1LPC010JASS (ALTERNATE: 1LPC010JASS)

    SENTRON PWR CTR 1PSS 10KVA BOLT-ON RP1 ; 1LPC010JASS | Siemens 1LPC010JASS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 1LPC010JASS (ALTERNATE: 1LPC010JASS) Bulk 2 Weeks 1
    • 1 $6292.56
    • 10 $6292.56
    • 100 $6292.56
    • 1000 $6292.56
    • 10000 $6292.56
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    10JAS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: w # SGS-THOMSON k7#1 IMlMIIlLIOTiMDtgS M29W800T M29W800B 8 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical


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    PDF M29W800T M29W800B x8/x16, 100ns 10jas

    SGP15N60RUF

    Abstract: No abstract text available
    Text: SGP15N60RUF FE A TU R ES N-CHANNEL IG B T TO -220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=15A * High Input Impedance A P P LIC A TIO N S < ? c * * * * * AC & DC Motor controls General Purpose Inverters


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    PDF SGP15N60RUF SGP15N60RUF

    2SF256

    Abstract: M28F256A
    Text: rz7 SCS-THOMSON M28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)


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    PDF M28F256A 100ns 10jas M28F256A PDIP32 PLCC32 2SF256

    Untitled

    Abstract: No abstract text available
    Text: 7/ SGS-THOMSON M^mooT IMlMIIlLIOTiMDtgS M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical


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    PDF M29W400B x8/x16, 100ns 10jas M29W400T,

    Untitled

    Abstract: No abstract text available
    Text: M29F100T M29F100B 1 Mbit 128Kb x 8 or 64Kb x 16, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)


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    PDF M29F100T M29F100B 128Kb 10jas M29F10OT,

    Untitled

    Abstract: No abstract text available
    Text: M29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)


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    PDF M29F400T M29F400B x8/x16, 10jas M29F400T,

    SGR5N60RUF

    Abstract: igbt 300V 5A
    Text: SGR5N60RUF N-CHANNEL IG B T D-PAK FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


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    PDF SGR5N60RUF SGR5N60RUF igbt 300V 5A

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ^ # ^oœ iLicgir^ ô io©i GSF32-16x16/90 fZ T 7 32 MByte SIMM FLASH MEMORYMODULE - fENTATIVE DATA • 80 PINS JEDEC 21 -C package ■ FAST ACCESS TIME: 90ns ■ 5V ± 10% single pow er supply operation ■ BYTE PROGRAMMING TIME: 10jas typical


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    PDF 10jas GSF16-8x16/90 GSF8-4x16/90 GSF32-16x16/90 A0-A20 DQ0-DQ3106013102181914

    Untitled

    Abstract: No abstract text available
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 90ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical


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    PDF M29W400T M29W400B 512Kb 256Kb 10jas

    ixys dsei

    Abstract: IXYS DSEI 2X
    Text: □IX Y S DSEI 2x101-02A Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM v Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRMS Tyj = T vjm A ^FAVM ^FRM TVJ = 125°C;Tc = 97°C; rectangular,§ = 0.5 (Note 1) 28 tp < 10jas; rep. rating, pulse width limited by TVJM400


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    PDF 2x101-02A OT-227 10jas; D-68623 00D3M43 ixys dsei IXYS DSEI 2X

    igbt 300V 5A

    Abstract: SGW5N60RUF 5A IGBT
    Text: SGW 5N60RUF N-CHANNEL IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


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    PDF SGW5N60RUF igbt 300V 5A SGW5N60RUF 5A IGBT

    SGP5N60RUFD

    Abstract: No abstract text available
    Text: SGP5N60RUFD C O -P A K IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) A P P LIC A TIO N S * * * * *


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    PDF SGP5N60RUFD SGP5N60RUFD

    SGW5N60RUFD

    Abstract: No abstract text available
    Text: SGW 5N60RUFD FE A TU R ES C O -P A K IG B T D2-PAK * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) 4* A P P LIC A TIO N S


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    PDF SGW5N60RUFD SGW5N60RUFD

    SGW20N60RUF

    Abstract: No abstract text available
    Text: SGW 20N60RUF N-CHANNEL IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


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    PDF SGW20N60RUF SGW20N60RUF

    igbt 300V 5A

    Abstract: 5A IGBT SGP5N60RUF
    Text: SGP5N60RUF FE A TU R ES N-CHANNEL IG B T TO-220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


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    PDF SGP5N60RUF igbt 300V 5A 5A IGBT SGP5N60RUF

    Untitled

    Abstract: No abstract text available
    Text: M29W800T M29W800B 8 Mbit 1 Mb x8 or 512Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 20ns by Word typical


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    PDF M29W800T M29W800B 512Kb 100ns 10jas M29W800T, FBGA48

    Untitled

    Abstract: No abstract text available
    Text: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)


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    PDF M29F200T M29F200B 256Kb 128Kb 10jas M29F200T,

    Untitled

    Abstract: No abstract text available
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical


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    PDF M29W400T M29W400B 512Kb 256Kb 100ns 10jas M29W400T,

    Untitled

    Abstract: No abstract text available
    Text: M29W400T M29W400B 4 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)


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    PDF M29W400T M29W400B x8/x16, 100ns 10jas M29W400T,

    igbt 200v 20a

    Abstract: SGH20N60RUFD 20A igbt
    Text: SGH20N60RUFD C O -P A K IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) A P P LIC A TIO N S * * * * *


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    PDF SGH20N60RUFD igbt 200v 20a SGH20N60RUFD 20A igbt

    SGP10N60RUF

    Abstract: No abstract text available
    Text: SGP10N60RUF FE A TU R ES N-CHANNEL IG B T TO -220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V @ lc=1 OA * High Input Impedance A P P LIC A TIO N S < ? c * * * * * AC & DC Motor controls General Purpose Inverters


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    PDF SGP10N60RUF SGP10N60RUF

    SGP20N60RUF

    Abstract: No abstract text available
    Text: SGP20N60RUF FE A TU R ES N-CHANNEL IG B T TO-220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance A P P LIC A TIO N S < ? c * * * * * AC & DC Motor controls General Purpose Inverters


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    PDF SGP20N60RUF SGP20N60RUF

    SGP10N60RUFD

    Abstract: 35 khz ballast 18w
    Text: SGP10N60RUFD C O -P A K IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.1 V @ lc=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) A P P LIC A TIO N S * * * * *


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    PDF SGP10N60RUFD SGP10N60RUFD 35 khz ballast 18w

    4094d

    Abstract: cmos 4094d
    Text: S ip v * SP8503, SP8505, SP8510 SIGNAL PROCESSING EXCELLENCE 12-Bit Sampling A/D Converters • 3p.s, 5|j.s or 10jas Sample/Conversion Time ■ Standard ±10V and +5V Input ■ No Missing Codes Over Temperature ■ AC Performance Over Temperature 71,5dB Signal-to-Noise Ratio at Nyquist


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    PDF SP8503, SP8505, SP8510 12-Bit 10jas 49kHz 49kHz 28-Pin SP85XX 4094d cmos 4094d