Untitled
Abstract: No abstract text available
Text: w # SGS-THOMSON k7#1 IMlMIIlLIOTiMDtgS M29W800T M29W800B 8 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical
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M29W800T
M29W800B
x8/x16,
100ns
10jas
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SGP15N60RUF
Abstract: No abstract text available
Text: SGP15N60RUF FE A TU R ES N-CHANNEL IG B T TO -220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=15A * High Input Impedance A P P LIC A TIO N S < ? c * * * * * AC & DC Motor controls General Purpose Inverters
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SGP15N60RUF
SGP15N60RUF
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2SF256
Abstract: M28F256A
Text: rz7 SCS-THOMSON M28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)
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M28F256A
100ns
10jas
M28F256A
PDIP32
PLCC32
2SF256
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Untitled
Abstract: No abstract text available
Text: 7/ SGS-THOMSON M^mooT IMlMIIlLIOTiMDtgS M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical
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M29W400B
x8/x16,
100ns
10jas
M29W400T,
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Untitled
Abstract: No abstract text available
Text: M29F100T M29F100B 1 Mbit 128Kb x 8 or 64Kb x 16, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F100T
M29F100B
128Kb
10jas
M29F10OT,
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Untitled
Abstract: No abstract text available
Text: M29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F400T
M29F400B
x8/x16,
10jas
M29F400T,
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SGR5N60RUF
Abstract: igbt 300V 5A
Text: SGR5N60RUF N-CHANNEL IG B T D-PAK FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters
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SGR5N60RUF
SGR5N60RUF
igbt 300V 5A
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ^ # ^oœ iLicgir^ ô io©i GSF32-16x16/90 fZ T 7 32 MByte SIMM FLASH MEMORYMODULE - fENTATIVE DATA • 80 PINS JEDEC 21 -C package ■ FAST ACCESS TIME: 90ns ■ 5V ± 10% single pow er supply operation ■ BYTE PROGRAMMING TIME: 10jas typical
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10jas
GSF16-8x16/90
GSF8-4x16/90
GSF32-16x16/90
A0-A20
DQ0-DQ3106013102181914
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Untitled
Abstract: No abstract text available
Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 90ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical
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M29W400T
M29W400B
512Kb
256Kb
10jas
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ixys dsei
Abstract: IXYS DSEI 2X
Text: □IX Y S DSEI 2x101-02A Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM v Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRMS Tyj = T vjm A ^FAVM ^FRM TVJ = 125°C;Tc = 97°C; rectangular,§ = 0.5 (Note 1) 28 tp < 10jas; rep. rating, pulse width limited by TVJM400
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2x101-02A
OT-227
10jas;
D-68623
00D3M43
ixys dsei
IXYS DSEI 2X
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igbt 300V 5A
Abstract: SGW5N60RUF 5A IGBT
Text: SGW 5N60RUF N-CHANNEL IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters
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SGW5N60RUF
igbt 300V 5A
SGW5N60RUF
5A IGBT
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SGP5N60RUFD
Abstract: No abstract text available
Text: SGP5N60RUFD C O -P A K IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) A P P LIC A TIO N S * * * * *
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SGP5N60RUFD
SGP5N60RUFD
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SGW5N60RUFD
Abstract: No abstract text available
Text: SGW 5N60RUFD FE A TU R ES C O -P A K IG B T D2-PAK * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) 4* A P P LIC A TIO N S
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SGW5N60RUFD
SGW5N60RUFD
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SGW20N60RUF
Abstract: No abstract text available
Text: SGW 20N60RUF N-CHANNEL IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters
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SGW20N60RUF
SGW20N60RUF
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igbt 300V 5A
Abstract: 5A IGBT SGP5N60RUF
Text: SGP5N60RUF FE A TU R ES N-CHANNEL IG B T TO-220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters
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SGP5N60RUF
igbt 300V 5A
5A IGBT
SGP5N60RUF
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Untitled
Abstract: No abstract text available
Text: M29W800T M29W800B 8 Mbit 1 Mb x8 or 512Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 20ns by Word typical
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M29W800T
M29W800B
512Kb
100ns
10jas
M29W800T,
FBGA48
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Untitled
Abstract: No abstract text available
Text: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F200T
M29F200B
256Kb
128Kb
10jas
M29F200T,
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Untitled
Abstract: No abstract text available
Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical
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M29W400T
M29W400B
512Kb
256Kb
100ns
10jas
M29W400T,
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Untitled
Abstract: No abstract text available
Text: M29W400T M29W400B 4 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29W400T
M29W400B
x8/x16,
100ns
10jas
M29W400T,
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igbt 200v 20a
Abstract: SGH20N60RUFD 20A igbt
Text: SGH20N60RUFD C O -P A K IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) A P P LIC A TIO N S * * * * *
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SGH20N60RUFD
igbt 200v 20a
SGH20N60RUFD
20A igbt
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SGP10N60RUF
Abstract: No abstract text available
Text: SGP10N60RUF FE A TU R ES N-CHANNEL IG B T TO -220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V @ lc=1 OA * High Input Impedance A P P LIC A TIO N S < ? c * * * * * AC & DC Motor controls General Purpose Inverters
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SGP10N60RUF
SGP10N60RUF
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SGP20N60RUF
Abstract: No abstract text available
Text: SGP20N60RUF FE A TU R ES N-CHANNEL IG B T TO-220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance A P P LIC A TIO N S < ? c * * * * * AC & DC Motor controls General Purpose Inverters
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SGP20N60RUF
SGP20N60RUF
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SGP10N60RUFD
Abstract: 35 khz ballast 18w
Text: SGP10N60RUFD C O -P A K IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.1 V @ lc=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) A P P LIC A TIO N S * * * * *
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SGP10N60RUFD
SGP10N60RUFD
35 khz ballast 18w
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4094d
Abstract: cmos 4094d
Text: S ip v * SP8503, SP8505, SP8510 SIGNAL PROCESSING EXCELLENCE 12-Bit Sampling A/D Converters • 3p.s, 5|j.s or 10jas Sample/Conversion Time ■ Standard ±10V and +5V Input ■ No Missing Codes Over Temperature ■ AC Performance Over Temperature 71,5dB Signal-to-Noise Ratio at Nyquist
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SP8503,
SP8505,
SP8510
12-Bit
10jas
49kHz
49kHz
28-Pin
SP85XX
4094d
cmos 4094d
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