10JAS Search Results

Contextual Info: w # SGS-THOMSON k7#1 IMlMIIlLIOTiMDtgS M29W800T M29W800B 8 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical

SGP15N60RUF

Contextual Info: SGP15N60RUF FE A TU R ES N-CHANNEL IG B T TO -220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=15A * High Input Impedance A P P LIC A TIO N S < ? c * * * * * AC & DC Motor controls General Purpose Inverters

2SF256

Abstract: M28F256A
Contextual Info: rz7 SCS-THOMSON M28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)

Contextual Info: 7/ SGS-THOMSON M^mooT IMlMIIlLIOTiMDtgS M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical

Contextual Info: M29F100T M29F100B 1 Mbit 128Kb x 8 or 64Kb x 16, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

SGR5N60RUF

Abstract: igbt 300V 5A
Contextual Info: SGR5N60RUF N-CHANNEL IG B T D-PAK FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters

Contextual Info: SGS-THOMSON ^ # ^oœ iLicgir^ ô io©i GSF32-16x16/90 fZ T 7 32 MByte SIMM FLASH MEMORYMODULE - fENTATIVE DATA • 80 PINS JEDEC 21 -C package ■ FAST ACCESS TIME: 90ns ■ 5V ± 10% single pow er supply operation ■ BYTE PROGRAMMING TIME: 10jas typical

Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 90ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical

ixys dsei

Abstract: IXYS DSEI 2X
Contextual Info: □IX Y S DSEI 2x101-02A Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM v Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRMS Tyj = T vjm A ^FAVM ^FRM TVJ = 125°C;Tc = 97°C; rectangular,§ = 0.5 (Note 1) 28 tp < 10jas; rep. rating, pulse width limited by TVJM400

igbt 300V 5A

Abstract: SGW5N60RUF 5A IGBT
Contextual Info: SGW 5N60RUF N-CHANNEL IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters

SGP5N60RUFD

Contextual Info: SGP5N60RUFD C O -P A K IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) A P P LIC A TIO N S * * * * *

SGW5N60RUFD

Contextual Info: SGW 5N60RUFD FE A TU R ES C O -P A K IG B T D2-PAK * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37ns (Typ.) 4* A P P LIC A TIO N S

SGW20N60RUF

Contextual Info: SGW 20N60RUF N-CHANNEL IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters

igbt 300V 5A

Abstract: 5A IGBT SGP5N60RUF
Contextual Info: SGP5N60RUF FE A TU R ES N-CHANNEL IG B T TO-220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=5A * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters

Contextual Info: M29W800T M29W800B 8 Mbit 1 Mb x8 or 512Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 20ns by Word typical

Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical

Contextual Info: M29W400T M29W400B 4 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

igbt 200v 20a

Abstract: SGH20N60RUFD 20A igbt
Contextual Info: SGH20N60RUFD C O -P A K IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) A P P LIC A TIO N S * * * * *

SGP10N60RUF

Contextual Info: SGP10N60RUF FE A TU R ES N-CHANNEL IG B T TO -220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V @ lc=1 OA * High Input Impedance A P P LIC A TIO N S < ? c * * * * * AC & DC Motor controls General Purpose Inverters

SGP20N60RUF

Contextual Info: SGP20N60RUF FE A TU R ES N-CHANNEL IG B T TO-220 * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance A P P LIC A TIO N S < ? c * * * * * AC & DC Motor controls General Purpose Inverters

SGP10N60RUFD

Abstract: 35 khz ballast 18w
Contextual Info: SGP10N60RUFD C O -P A K IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.1 V @ lc=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) A P P LIC A TIO N S * * * * *

4094d

Abstract: cmos 4094d
Contextual Info: S ip v * SP8503, SP8505, SP8510 SIGNAL PROCESSING EXCELLENCE 12-Bit Sampling A/D Converters • 3p.s, 5|j.s or 10jas Sample/Conversion Time ■ Standard ±10V and +5V Input ■ No Missing Codes Over Temperature ■ AC Performance Over Temperature 71,5dB Signal-to-Noise Ratio at Nyquist