10MAY05 Search Results

5-678042-1

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR PUBLICATION A L L RIGHTS COPYRIGHT 2 3 - RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC D IST AD 00 REVISIONS LTR D E SC RIPTIO N A EC 0G3C 0190 05 DATE DWN 10MAY05 BSV APVD D D CLOSE END OPEN END GOLD

Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 6 4 5 3 2 P U B L IC A T IO N R IG H T S LOC RESERVED. GP C O R P O R A TIO N . D IS T R E V IS IO N S 00 LTR B B1 H H H H H H H H H H H H H H H H H H H H H H H H H H H B l B l B l B l B l H H H H H H H H H H H H B l B l B l B l B l

lin bus pinout DB9

Abstract: DB9 serial Connector pcb layout DB9 connector to LCD interface piezoelectric buzzer 12V sub-d9 piezoelectric buzzer connected to microcontroller MA6 rs232 driver AT91SAM7A2-EK AT49BV1614A AT49BV162A
Contextual Info: AT91SAM7A2-EK Evaluation Board . User Guide AT91SAM7A2-EK Evaluation Board User Guide 6115B–ATARM–10-May-05 Table of Contents Section 1 Overview . 1-1

508E-10

Contextual Info: Vishay Thin Film Sandwich, 50 Mil Pitch, Dual-In-Line Resistor Networks FEATURES • Lead Pb -Free available • Gold-to-gold terminations. External leads are Pb-free attached directly to gold pads on the ceramic Available substrate by thermo-compression bonding

Contextual Info: BYW54GP THRU BYW56GP SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE:600 TO 1000V CURRENT: 2.0A FEATURE DO-15\DO-204AC High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of

DRD10CE04

Abstract: ALCO BCD smt rotary dip switch DRD16SETR04 1825007-1 DRD16ET04 OT31 DRD10SETR04
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D i— .236 .100 TYP C n HOW TO ORDER D R D B S E R IE S C IR C U IT TYPES - 1 0 = BC DECIMAL 1 0 C = BCD C O M P L E M E N T

Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier May 2005 - Rev 10-May-05 P1016 Features Chip Device Layout Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Application of INFRARED REMOTE CONTROL

Abstract: Photodiode vishay BPV22F
Contextual Info: BPV22F Vishay Semiconductors Silicon PIN Photodiode Description BPV22F is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters

PAC03

Contextual Info: PAC 01.06 Series Vishay BCcomponents Cemented Wirewound Precision Resistors FEATURES • High power dissipation in small volume • High pulse load handling capabilities. • TC100 • Maximum permissible hot spot temperature is 275 °C The resistor is coated with a green silicon cement which is

500 volts resistor 100k ohm

Abstract: OSOP
Contextual Info: SURFACE MOUNT NETWORKS SURFACE MOUNT OSOP Vishay Thin Film Molded, 25 Mil Pitch, Dual-In-Line Resistor Network FEATURES Actual Size • Lead Pb -Free available • 0.068" (1.73mm) maximum seated height • Rugged molded case construction with no internal solder

Contextual Info: Vishay Thin Film Sandwich, 50 Mil Pitch, Dual-In-Line Resistor Networks FEATURES • Lead Pb -Free available • Gold-to-gold terminations. External leads are Pb-free attached directly to gold pads on the ceramic Available substrate by thermo-compression bonding

ILSB-1206

Contextual Info: ILSB-1206 Vishay Dale Monolithic Chip Inductors FEATURES • • • • • MECHANICAL SPECIFICATIONS High reliability. Surface mountable. Magnetically self shielded. Nickel barrier plating virtually eliminates silver migration. 100% Lead Pb -free and RoHS compliant.

Contextual Info: 4 TH IS DRAWING IS U N P U B L IS H E D . RELEASED FOR PU B LIC ATIO N A LL COPYRIGHT 2 3 RIG HTS - ,- REVISIONS 1.27 + 0.05 [.050 + .002] R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. P LTR B D E S C R IP TIO N DATE ECO — 08 —003453 DWN APVD MB MS

P1016

Abstract: 84-1LMI 84-1LMIT
Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier May 2005 - Rev 10-May-05 P1016 Features Chip Device Layout Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

OSOP

Contextual Info: SURFACE MOUNT NETWORKS SURFACE MOUNT OSOP Vishay Thin Film Molded, 25 Mil Pitch, Dual-In-Line Resistor Network FEATURES Actual Size • Lead Pb -Free available • 0.068" (1.73mm) maximum seated height • Rugged molded case construction with no internal solder

ILSB-0805

Contextual Info: ILSB-0805 Vishay Dale Monolithic Chip Inductors FEATURES • • • • • High reliability. Surface mountable. Magnetically self shielded. Nickel barrier plating virtually eliminates silver migration. 100 % Lead Pb -free and RoHS compliant. ENVIRONMENTAL SPECIFICATIONS

ILSB-1206

Contextual Info: ILSB-1206 Vishay Dale Monolithic Chip Inductors FEATURES • • • • • MECHANICAL SPECIFICATIONS High reliability. Surface mountable. Magnetically self shielded. Nickel barrier plating virtually eliminates silver migration. 100% Lead Pb -free and RoHS compliant.

ILSB-0603

Contextual Info: ILSB-0603 Vishay Dale Monolithic Chip Inductors FEATURES • High reliability. • Surface mountable. • Magnetically self shielded. • Nickel barrier plating virtually eliminates silver migration. • 100% Lead Pb -free and RoHS compliant. MECHANICAL SPECIFICATIONS

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC ES ALL RIGHTS RESERVED. SIGNAL SECONDARY LOCK PART NUMBER 1600902-1 REF 1 REVISIONS DIST 00 P LTR DESCRIPTION DATE DWN APVD L ADDED NEW DASH NUMBER 23AUG2013 CZ

Si5402DC

Abstract: Si5402BDC Si5402DC-T1 74062 SI5402BDC-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si5402BDC vs. Si5402DC Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5402BDC-T1-E3 Replaces Si5402DC-T1-E3 Si5402BDC-T1-E3 Replaces Si5402DC-T1 Summary of Performance:

Si4892BDY

Abstract: Si4892DY-T1-E3 Si4892DY Si4892DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si4892BDY vs. Si4892DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4892BDY-T1-E3 Replaces Si4892DY-T1-E3 Si4892BDY-T1-E3 Replaces Si4892DY-T1 Summary of Performance:

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL AMP C O P Y R IG H T 1471-9 _ B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. C O R P O R A T IO N . R EV 3 1 M A R 2 0 0 0 \\Dock5\Tyco\AMP-TYCQ_ACADQ1\Steve

BPV22F

Contextual Info: BPV22F Vishay Semiconductors Silicon PIN Photodiode Description BPV22F is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters

ILSB-0603

Contextual Info: ILSB-0603 Vishay Dale Monolithic Chip Inductors FEATURES • High reliability. • Surface mountable. • Magnetically self shielded. • Nickel barrier plating virtually eliminates silver migration. • 100% Lead Pb -free and RoHS compliant. MECHANICAL SPECIFICATIONS