10OFIF Search Results

Contextual Info: STK12C68-M CMOS nvSRAM 8K x 8 AutoStore Nonvolatile Static RAM MIL-STD-883 / SMD # 5962-94599 SlfïlTEH FEATURES DESCRIPTION The Sim tek STK12C68-M is a fast static RAM 35, 45 and 55ns , with a nonvolatile EEPROM element incor­ porated in each static memory cell. The SRAM can be

Contextual Info: STK12C68 FEATURES 30, 35 and 45ns Access Times 15 mA Iqc at 200ns Access Speed Automatic STORE to EEPROM on Power Down Hardware or Software initiated STORE to EEPROM Automatic STORE Timing 100,000 STORE cycles to EEPROM 10 year data retention in EEPROM Automatic RECALL on Power Up

CH1817

Abstract: CH1840 SD05 TR302 8 QAM modulator demodulator modem Robinson Nugent socket 16 pin
Contextual Info: NEW PRODUCT CERMETEK MICROELECTRONICS Cermetek microelectronic» SEE ]> Bi 2005603 DOD1ESO 7 6 7 • CER CH1789-ND - V.22 bis/2400 bps Ultra Small Modem -p-7 s With Send/Receive Fax Modem INTRODUCTION FEATURES: The CH1789-ND is a very small, low profile 2400 bps modem

1mx1 DRAM

Abstract: taa 723 KM41C16100-6 KM41C16100-7 KM41C16100-8
Contextual Info: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 1 6 1 0 0 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications

MQ4A

Abstract: um227 NLMQ4
Contextual Info: KM44C268C CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

BD 7820

Contextual Info: April 1997 M gL M ic r o L i n e a r ML4872 High Current Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4872 is a continuous conduction boost regulator designed for DC to DC conversion in multiple cell battery powered systems. Continuous conduction allow s the

KA76L05

Contextual Info: KA76L05 LINEAR INTEGRATED CIRCUIT 3-TERMINAL LOW DROPOUT VOLTAGE REGULATOR TO-92 KA76L05 is an adjustable 3-terminal low dropout voltage regulator designed to need very low quiescent current. Internally, implemented circuits include 60V load dump protection,

Contextual Info: STK14C88 32K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM SlfïlTEH FEATURES DESCRIPTION • 25ns, 35ns and 45ns SRAM Access Times • Com m ercial and Industrial Temperatures The Simtek STK14C88 is a fast static RAM with a nonvolatile, electrically-erasable PROM element

Contextual Info: Aprii Î997 % ,M icro Linear ML475Î Adjustable Output Low Current Boost Regulator GENERAL DESCRIPTION FEATURES The ML4751 is a low power boost regulator designed for DC to D C conversion in 1 to 3 cell battery powered systems. The combination of internal synchronous

REGULATOR latch DIS 16-pin dip

Contextual Info: M une TECHNOLOGY T M L ^ E L i M B E Final Electrical Specifications LTC1627 Monolithic Synchronous Step-Down Switching Regulator August 1998 K flT U M S DCSCRIPTIO High Efficiency: Up to 9 5 % Constant Fre qu en cy 3 5 0 k H z Operation The LTC®1627 is a monolithic current mode synchronous

Contextual Info: L in t A B _ TECHNOLOGY Low Voltage, High Efficiency Step-Down DC/DC Converter F€flTUR€S D € S C R IP TIO fl • ■ ■ ■ The LTC 1626 is a monolithic, low voltage, step-down current mode DC/DC converter featuring Burst Mode operation at low output current.

diagram for a 12v 250w power amplifier

Abstract: UCC38xx 500w mosfet power amplifier circuit diagram UCC28xx SEM1200 Unitrode Power Supply Design 500w hf power amplifier circuit diagram UCC18xx amp 7313
Contextual Info: y UCCI 817/18 UCC2817/18 UCC3817/18 U N IT R O D E BiCMOS Power Factor Preregulator ADVANCE INFORMATION FEATURES DESCRIPTION • Controls Boost Preregulator to near Unity Power Factor The UCC1817/UCC1818 provides all the functions necessary for active power factor corrected preregulators. The controller achieves near unity

diode 22ph

Abstract: x877
Contextual Info: 19-0204; Rev 1; 5/94 A li1 X I> k l «FMW-UMION* 5V/3.3V/3V/Adjustable-O utput, Step-Up/Step-Do wn DC-DC C onverters _ F eatures ♦ Regulates from Inputs Above & Below the Output The MAX877 delivers a regulated 5V output from 2.5V to

Contextual Info: CdlotfC CORPORATION Triple CRTDrive, \J Preliminary Product Information CVA1404T FEATURES DESCRIPTION • • • • The CVA1404T contains three wideband amplifiers, designed specifically to drive a CRT. The device can drive monitors with resolutions up to 1024 x 768 non-interlaced .

Contextual Info: Final Electrical Specifications r r u LTC1474/LTC1475 TECHNOLOGY Low Quiescent Current High Efficiency Step-Down Converters n m M a rc h 1997 FCRTURCS D C S C R IP TIO n • High Efficiency: Over 92% Possible ■ Very Low Standby Current: 10|uA Typ ■ Available in Space Saving 8-Lead MSOP Package

Contextual Info: SAMSUNG ELECTRONICS INC h ?E D WÊ 7^b414S KM41C16100 GOlbGSS 54 2 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its

Contextual Info: STK14C88-M 32K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM MIL-STD-883 5IÎT1TEK PRELIMINARY FEATURES DESCRIPTION • 35ns and 45ns SRAM Access Times The Simtek STK14C88-M is a fast static RAM with a nonvolatile, electrically-erasable PROM element

Contextual Info: April 1997 Micro Linear ML4771 High Current Boost Regulator GENERAL DESCRIPTION FEATURES The ML4771 is a continuous conduction boost regulator designed for DC to DC conversion in multiple cell battery powered systems. Continuous conduction allows the regulator to maximize output current for a given inductor.

KM44C4100-6

Abstract: xnxx KM44C4100-7 km44c4100 taa 723 KM44C4100-8 dram 4mx4
Contextual Info: KM44C4100 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e ra nge: The Samsung K M 4 4 C 4 1 0 0 is a high speed CMOS 4 , 1 9 4 ,3 0 4 X 4 Dynam ic Random A ccess M em ory. Its design is optim ized for high perform ance applications

transistor 2SA

Abstract: SA1362 LB Nichicon S-8323C A720 transistor 2sd 5200
Contextual Info: Contents Applications. 1 Block Diagram. 1 Selection

Contextual Info: April 1997 MgLMicro Linear ML4863 High Efficiency Flyback Controller GENERAL DESCRIPTION FEATURES The ML4863 is a flyback controller designed for use in multi-cell battery powered systems such as PDAs and notebook computers. The flyback topology is ideal for

three relay stabilizer circuit diagram

Contextual Info: SGS-TtfOMSON oœmi OT(s «i TEA7868 LINE INTERFACE Designed to interface an equipment with the tele­ phone line, this 8 pin 1C provides : • LINE ADAPTATION ■ RING DETECTION ■ LOGIC SIGNAL OUTPUT O th e r: ■ LOW WORKING VOLTAGE ■ WIDE OPERATING CURRENT RANGE

Contextual Info: SAMSUNG ELECTRONICS INC 42 E D O f 7Sb41_42 £ 0 1 0 1 4 1 KM44C288B 2 MStlGK CMOS DRAM Lfio'ZS-tS 256K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268B is a high speed CMOS

mosfet 4914

Abstract: wiring diagram for ge cr2943na102a MOSFET 818 ln PWM dc speed control of DC motor using IRF540 5BPB56HAA100 KC1000
Contextual Info: General Description Features The MIC5010 is the full-featured member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The MIC5010 is