B414S Search Results

Contextual Info: SAMSUNG ELECTRONICS INC h ?E D WÊ 7^b414S KM41C16100 GOlbGSS 54 2 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^b414S 0 0 17 0 0 3 031 « S r iG K PRELIMINARY KM23V4001 B G CMOS MASK ROM 4M-BH (512K x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23V4001B is a fully static m ask program m able ROM organized 524,288 x 8 bit. It is fabricated using silicon-gate CMOS process technology.

k 4145 transistor

Abstract: SS9018 SS9014 SS9015 SS9016
Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E SS9015 D |7^b414S 0007405 fc> | 7- 2 9 - / f PN P EPITAXIAL SIL IC O N T R A N SIST O R LOW FREQUENCY, LÖW NOISE AMPLIFIER • Complement to SS9014 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage

Contextual Info: Advanced Power MOSFET SFM 9214 FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ ^DS on = Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA (Max.) @ VDS= -250V

Contextual Info: K M 4 8 C 2 10 4 B K CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

KM44C1000

Abstract: km44c1000bj KM44C1000BJ6 KM44C1000BP-7
Contextual Info: SAMSUNG ELECTRONICS INC L7E i 7^4142 DDISbHT B47 « S P I Ù K CMOS DRAM KM44C1000B 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000B is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its de­

Contextual Info: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: 1 About This Data Sheet This data sheet provides a technical overview of the Samsung 21164 Alpha microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary

TAA 691

Contextual Info: KM48V512DJ CMOS DRAM ELECTRONICS 512K X 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM44V1004DJ ELECTRO NICS CMOS D R A M 1 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

KM48S8030AT

Abstract: KM48S KMM366S1623AT KMM366S1623AT-G0 KMM366S1623AT-G2 KMM366S1623AT-G8
Contextual Info: NEW JEDEC SDRAM MODULE KMM366S1623AT KMM366S1623AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623AT is a 16M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: PRELIMINARY KM718V789/L 128Kx18 Synchronous SRAM 128K x 18- Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION •• •• •• •• •• •• •• •• •• •• •• The KM718V789/L is a 2,359,296-bit Synchronous Static

Contextual Info: KM41V16000A/AL/ALL/ASL CMOSDRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tC A C tR C K M 41V 16000A /A L /A L L /A S L -6 60 ns 15 ns 110 ns K M 41V 16000A /A L /A L L /A S L -7 70 ns 20 ns 130 ns

Contextual Info: SAMSUNG ELECTRONICS INC h?E D • 7^142 0Dlhfl34 D7S PRELIMINARY KM93C56V/KM93C66V CMOS EEPROM 2 K /4K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 3 .0 V ~ 5 . 5 V • Low power consumption — Active: 3 mA TTL

KM684000

Abstract: km684000-7 KM68512
Contextual Info: CMOS SRAM KM684000/L/L-L 524, 288 WORD X 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55, 70, 8 5 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 2.57mW(Max) 550,uW(Max.) L-Version 110/<W(Max.) L-L-Version Operating

Contextual Info: The information in this data sheet can change upon complete cahracterization and evaluation A A > IO C fA > IO C l\ U A U 4 o 3 |U 4 o 0 135MHz CMOS True-Color RAM PAC of this new product._ KDA0485 FEATURES ♦ 135,110, 85MHz Pixel Clock

Contextual Info: KS0119 Data Sheet MULTIMEDIA VIDEO VIDEO ENCODER The KS0119 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels which allow

23E D

Abstract: km6465
Contextual Info: SAMSUNG SEMICONDUCTOR INC 23E D 7^4145 DGOaab4 ñ • KM6465P/KM6465LP CMOS SRAM 16K x 4 Bit Static RAM FEATURE GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 2 mA (max.) (CMOS): 100 (iA (max.) Operating

KM416S1120AT

Abstract: KM416S1120A KM416S1120AT-G KM416S1120AT-10 KM416S1120AT-12
Contextual Info: KM416S1120AT SDRAM ELECTRONICS 512 K x 16Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • The KM416S1120A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG'S high performance