10OOA Search Results

Contextual Info: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e ran ge: tR A C tC A C tR C K M 44C1 000A S L- 7 7 0 ns 2 0 ns 1 3 0 ns K M 44C1 000A S L- 8 80ns 2 0 ns 1 5 0 ns K M 4 4 C 10OOASL-1 0

Contextual Info: KM44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s

Contextual Info: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tnAC tCAC tue KM 44C 1000ASL- 7 70ns 20ns 130ns KM 44C 1000ASL- 8 80ns 20ns 150ns KM 44C 10OOASL-10 100ns 25ns 180ns • • • •

transistor 45 f 122

Abstract: BUK416-1000AE K416 K4161 BUK416-1000BE
Contextual Info: P h ilip s C o m p o n e n ts Data sheet status Prelim inary specification date of issue March 1991 BU K416-10OOAE/BE PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in ISO TO P envelope.

74ALS1000

Abstract: SN54ALS1000A
Contextual Info: TYPES SN54ALS1000A. SN54AS1000, SN74ALS1000A, SN74AS1000 QUADRUPLE 2-INPUT POSITIVE NANO BUFFERS/DRIVERS 0 2 6 6 1 , A P R IL 1 9 8 2 - R E V I S E D D E C E M B E R 1 9 8 3 ' A L S 1 0 0 0 A is a B u ffe r V e r s io n o f SN 54ALS1O O O A, S N 5 4 A S 1 0 0 0 . . . J PA C K A G E

Contextual Info: November 1990 Edition 2.0 DATA SHEET FUJITSU MB81CWOOA-70L/-80L/-10L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1M x 1 Bit Fast Page Mode DRAM The Fujitsu MB81C1000A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1000A has been designed or mainframe

Contextual Info: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

Contextual Info: CMOS DRAM KM44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC

44c1000

Contextual Info: KM44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tRAC • • • • • • • tcAC tRC 130ns KM 44C1000AL- 7 70 n s 2 0 ns KM44C1OOOAL- 8 80ns 2 0 ns 1 50 ns K M 4 4 C 1 0 0 0 A L -1 0

Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm * 2.2 ± 0.2DEPTH APPLICATION Clamp diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS

SDM300

Abstract: SDM30004 SDM30008 SDM30012 10000-r SDM-300
Contextual Info: Silicon Power Rectifier SDM300 - A — •— F—' — i D im . o — *• * i> B H — 1I KÏI - I ! A B C F G H K L M G H — — I \ L In c h e s Min. Max. M il lim e t e r s Min. _ — ——. 1.240 31.49 2.650 1.260 .925 2.00 BSC 0.320 0.340

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

Contextual Info: N » 1 9 M 9Z MC-421000AA40, -421000AB40 1,048,576 X 40-Bit Dynamic CMOS RAM Module L i M li W NEC Electronics Inc. February 1992 Description Pin Configuration The MC-421000AA40 and MC-421000AB40 are fastpage dynamic RAM modules organized as 1,048,576 words by 40 bits and designed to operate from a single

Mitsubishi transistor

Abstract: transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules
Contextual Info: MITSUBISHI TRANSISTOR MODULES ! QM1000HA-24B j HIGH POWER SWITCHING USE j INSULATED TYPE { APPLICATION AC m otor controllers, UPS, CVCF, DC m otor controllers, NC equipm ent, W elders 2 - 1 90 MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES QM1000HA-24B

150a gto

Abstract: R60S2515ES 150a gto 2000v BP107 R60F2515ES GTO thyristors R60e gto 1600v 150A GTO 2000 V R60s diode
Contextual Info: m ti4 E D • 7E T4b21 OOÜ5fl34 MTì M P R X R60S2515ES R60F2515ES Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Fast Recovery Diode

Contextual Info: 75T4b21 GGGbS02 0 2 3 H P R X TA20 1800A Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P h S S C C O fltfO l S C R Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 . an n . 1800 Amperes Average

Contextual Info: b4E D rn n m • TETUbSl DGG5T75 W E « P R X FG1000AH x POUEREX INC Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Man», France(43) 7Z75.15 Asymmetric Gate-Turn-Off Thyristors

SN54ALS1000A

Abstract: D26G1 SN54AS1000A SN74ALS1000A SN74AS1000A
Contextual Info: SN54A LS1000A, SN74ALS1OOOA, S N 54A S 1000A , S N 74A S 1000A QUADRUPLE 2 INPUT POSITIVE NAND BUFFERS/DRIVERS D 2 6 6 1 , A P R IL 1 9 8 4 - R E V IS E D M A Y 1 9 8 6 'A L S 1 0 0 0 A is a Buffer Version of 'ALSOOB S N 5 4 A L S 1 0 0 0 A , S N 5 4 A S 1 0 0 0 A . . . J PACKAG E

Contextual Info: GEC P L E S S E Y 3 SEM ICONDUCTORS i DS4217-2.3 D S F 1 1 0 6 0 S G FAST RECOVERY DIODE APPLICATIONS • KEY PARAMETERS 6000V RRM 400A Jf AV 4200A FSM 700(iC Qr 6.0|iS v Snubber Diode For G TO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability.

Contextual Info: Si GEC PLE SS EY S E M IC O N D U C T O R S DS4091-2.2 DG408BP45 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 1000A TCM V 4500V DRM 320A *T AV dVp/dt 1000V/HS dLp/dt 300A/|iS • Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies

Contextual Info: SiG E C P L E S S E Y SF Ml C O N D U C T O R S DS4146-4.3 DSF8025SE FAST RECOVERY DIODE APPLICATIONS • KEY PARAMETERS V RRM 2500V 650A Jf AV 7500A ' fsm 540|iC Induction Heating. ■ A.C. Motor Drives. ■ Q. Inverters And Choppers. ■ Welding. 5.0|XS

Contextual Info: INTEGRATED CIRCUITS UC1526A UC2526A UC3526A U N IT R O D E Regulating Pulse Width Modulator DESCRIPTION FEATURES Reduced Supply Current Oscillator Frequency to 600kHz Precision Band-Gap Reference 7 to 35V Operation Dual 200mA Source/Sink Outputs M inim um O utput C ross-C onduction

diode B4E

Abstract: BP107 Q005 R72F4520BS R72S4520BS high power free wheeling diode powerex diode
Contextual Info: F W M lW 72C14b51 ooüsôm2 sb5 mpnx R72S4520BS _ R72F4520BS_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 F d S t R & C O V G T V D ÎO C lO Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Jq j T h y N s tO tS

N42C

Abstract: N41C MN41256a N41257A-08 N4146 4141-00 41410 TSOP044-P0400A N4141
Contextual Info: MOS Memories • Dynamic RAMs Memory Size Type No. bit Memory A ccess C ycle Refresh Supply C om position Tim e Tim e C ycle Voltage (W ord X bit) max. (ns) min. (ns) (cycle/m s) (V) O perating S tand-by 262,144 X 1 80 160 256/4ms 4.5 ~ 5.5 440 16.5 DIPOI 6-P-0300A