10R1 Search Results

Contextual Info: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.

Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use

Contextual Info: HM69D-10R10LF summary material content, BI Technologies Corporation Index Item Material Name 1 CORE NP1 2 COIL Copper Strip 2 pcs 3 SOLDER Lead Free Solder Element Composition CAS No Material Mass Composition (g) (g) Fe2O3 Mn3O4 ZnO 1309-37-1 1317-35-7 1314-13-2

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the

ba10g

Abstract: BA-10H1UD
Contextual Info: LED LIG H T BA R S & BA R G R A PH A R R A Y S Chip Part No. Digit Size 1=3 CD CTD CUD CZD 1=1 C=3 10BAR GRAPH ARRAY BA-10E1UD cm CC DT C=I trzi Common Common Anode Cathode BA-10R1UD BA-10H1UD BA-10G1UD BA-10Y1UD 5BAR GRAPH ARRAY BA-10S1UD BA-5H5UD BA-5G5UD

AD-04

Contextual Info: LED Light Bar & Bar Graph Arrays 5,9,10,12,15-Segment Part No. Digit Size 1.78*5.10mm 10Bar Graph Array 1.70*5.00mm 5Bar Graph Array Common Anode Common Cathode 12Bar Graph Array 9Bar Graph Array 1.78*5.10mm 15Bar Graph Array Peak Wave Length λ p nm BA-10R1UD

MRF6522-10

Abstract: MRF6522-10R1 10R1 Ni200 mosfet 4496
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the

ba10g

Abstract: BA-10R1UD BA 30 C BA-10E1UD BA-10G1UD BA-10H1UD BA-10S1UD BA-10Y1UD DOG 2 BA111
Contextual Info: BRIGHT LED ELECTRONICS L 3SE D • IbiatHfa OOOOQg11! H ■ T-V/-3/ E BAR GRAPH & ARRAY Part No. Size Anode Length Xp nm Color Cathode BA-10R1UD 6.5X 12,9mmLIGHT BAR • AX lf(mA) Typ. Max. 40 200 1.7 2.0 0.7 Peak Vf(V) If(mA) (nm) (mw) 665 40 110 . Bright Red .

j608

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use in Communications Network GSM base stations. The package offers the

Contextual Info: D I S P L A Y LED LIGHT BARS & BAR GRAPH ARRAYS Chip Part No. Digit Size 1DGOOOOΠECZD 3 CD c=j a E m itted Color Common Common Anode Cathode BA-10R1UD 10BAR GRAPH ARRAY 5BAR GRAPH ARRAY Red Bright Red BA-10H1UD BA-10G1UD BA-10Y1UD Green Yellow Hi-Eff Red

resistor 5m ohm

Abstract: rP73 5r1 resistor
Contextual Info: SMD Precision Resistors Type RP73 Series Type RP73 Series Characteristics Electrical T.C.R's Available per Resistance Value ppm/°C Type 5R1 - 10R 10R1 - 47R 47R1 -332K 332K1 - 1M0 1M1 - 5M RP73 1J - 25/50 10/15/25/50 - - RP73 2A - 25/50 10/15/25/50 10/15/25/50

j608

Abstract: 10R1 MRF6522-10R1
Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the

j608

Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the

EMK316ABJ226

Abstract: EMK316ABJ226ML
Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10R1B08 RoHS compliance product ○EMK316ABJ226ML 1000 Capacitance[uF] . 16V 3216 B/X5R 22uF +/-20% t=1.8mmMAX 16V 1206 B/X5R 22uF +/-20% t=0.071inchMAX EMK316ABJ226ML Capacitance Freq. 100 10

Contextual Info: 2-10R1A Unit: nn

2-10R1A

Abstract: TD-220NIS 10R1A EIAJ SC67
Contextual Info: S-IORIA Uniti nn 2. 7±0. 2 Nane JEDEC EIAJ Toshiba Discrete Semiconductor Integrated Circuit TD-220NIS - SC -67 2-10R1A P-H SIP3-2.54A Jan.2003

Contextual Info: PIN SWITCH SP10T Reflective Switches P/N SP10TRSW-10R-0510 SP10TRSW-10R-1020 SP10TRSW-10R-2040 SP10TRSW-10R-4080 SP10TRSW-10R80120 SP10TRSW-10R120150 0.5-1.0 1-2 2-4 4-8 Insertion Loss dB Max. 2.1 2.4 2.9 3.3 8-12 3.9 60 2.0 50 0.5 12-18 4.5 50 2.0 50 0.5

onsemi DEVICE BK

Abstract: 10R1 BCX56 BCX56-10R1 sot-89 body marking C 2 L Y
Contextual Info: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.

j608

Abstract: mrf652210r1 MRF6522-10R1 J605 10R1 NT 407 F MOSFET TRANSISTOR
Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use

AD-04

Abstract: AD-01 AD-02 AD-03 BA-10E1UD BA-10G1UD BA-10H1UD BA-10R1UD BA-10Y1UD BA 30 C
Contextual Info: SINCE 1981 Part No. Digit Size 1.78*5.10mm 10Bar Graph Array 1.70*5.00mm 5Bar Graph Array Common Anode Chip Common Cathode BA-10R1UD GaAsP/Red 655 40 80 40 200 1.7 2.0 1.4 GaP/ Bright Red 700 90 40 15 50 2.2 2.5 2.0 BA-10G1UD GaP/ Green 568 30 80 30 150 2.2

15BAR

Abstract: AD-04
Contextual Info: LED Light Bar & Bar Graph Arrays 5,9,10,12,15-Segment Part No. Digit Size 1.78*5.10mm 10Bar Graph Array 1.70*5.00mm 5Bar Graph Array Common Anode Common Cathode 12Bar Graph Array BA-10R1UD GaAsP/Red 655 40 80 40 200 1.7 2.0 1.4 GaP/ Bright Red 700 90 40 15

BA-9Y4

Abstract: AD-04 BA part 2 diode BA 398 IAE3010-BPKG AD-01 AD-02 AD-03 BA-10E1UD BA-10G1UD
Contextual Info: Part No. Digit Size 1.78*5.10mm 10Bar Graph Array 1.70*5.00mm 5Bar Graph Array Common Anode Chip Common Cathode Material/Emitted Color BA-10R1UD GaAsP/Red 655 40 80 40 200 1.7 2.0 1.4 GaP/ Bright Red 700 90 40 15 50 2.2 2.5 2.0 BA-10G1UD GaP/ Green 568 30

marking BK

Contextual Info: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.

ba10g

Abstract: BA-10R1UD ba-10g1ud A M E 26
Contextual Info: BAR GRAPH & ARRAY Part No. Emitted C o m m on Size Xp nm A>. Peak Pd (nm ) (m w ) If(mA) Max. Iv Typ. Per Seg. (m cd ) 0.7 Vf(V) If(mA) Typ. D raw ing BA-10R1UD Red 655 40 110 40 200 1,7 2.0 BA-10H1UD Bright red 700 90 50 15 50 2.1 2.6 1.0 10 BA-10G1UD Green