10RNS Search Results

bd907.bd908

Abstract: BD907/BD908 BD907B BD907 BD908 B0907 B0908 BD905 BD912 BD911 b0912
Contextual Info: COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN BD9Q5 BD907 BD909 BD911 . designed for use in general purpose power amplifier and switching applications. FEATURES: Boca Semiconductor Corp. * Collector-Emitter Sustaining Voltage v cEo susf 45V(Min - BD905, BD906

OPTOCOUPLER trigger thyristor scr

Abstract: OPTOtriac zero crossing application note gate driver for h bridge mosfet siemens RC snubber
Contextual Info: SIEMENS FEATURES • On-State Current, 300 mA • Zero Voltage Crossing • Blocking Voltage, 600V • isolation Teat Voltage from Double Molded Package, 5300VACRMS • High Input Sensitivity 1 ,^ mA, PF=1.0 IfT*5 mA, PFE1.0 • Wgh Static dv/dt 10KV4is • Inverse Parallel SCRs Provide

Contextual Info: M ITEL DCR1279SD Phase Control Thyristor SEMICONDUCTOR Supersedes Septem ber 1997 version, DS4643 - 3.1 DS4643 - 3.2 APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. ■ DC M otor C ontrol. March 1998 KEY PARAMETERS 4800V DRM 860A

30f 124 equivalent

Contextual Info: SMBG AND SMBJ5.0 THRU 170CA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage - 5.0 to 170 Volts Peak Pulso Power - 600 Watts PO-214AA FEATURES MODIFIED J'BEND ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

PG2011

Contextual Info: T Z ^ Y ^1 , A. P H O T O iN T E R R U P T E R S J T ra n sm it ty p e PG-201 DIMENSIONS Unit:m m PG-20114, ttj*4 '® 3 £ 5 fc A .y y £ 1 S t8 B T -A K T '-ftffc L , SB1Sji®W86&ffiU'.hSMkL Iff The PG-201 is a photointerrupter consisting of GaAs IRED and photodarlington.The IRED and sensor chips

Contextual Info: International 1 ]Rectifier PD — IR L13303 p re lim in a ry HEXFET® Power MOSFET • • • • • • Logic-Level Gate Drive Ad van ced P rocessTechnology Isolated Package High Voltage Isolation = 2.5 K V R M S Sink to Lead Creepage Dist. = 4.8mm

Contextual Info: International [MlRectifier PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

D405N

Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
Contextual Info: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC

BYX71

Contextual Info: rZ 7 S G S -T H O M S O N ^ 7# B Y T 7 1 - 1 0 0 A -» 8 0 0 A FAST RECOVERY RECTIFIER DIODES • H IG H V O L T A G E C A P A B IL IT Y ■ FAST AND SO FT RECO VERY ■ THE S P E C IF IC A T IO N S AND A B L E T H E D E T E R M IN A T IO N Cathode connected to case

FS DMO 365 RN

Abstract: mxj A1 connector LS 2027 audio amp MA81C WDA42 lx4 d09 st3pc 13T4 0601N D1661
Contextual Info: Model : F17P R:1 Intel Pentium 4 LGA775 +PT880+VIA8235 C E PCB STACK UP LAY1 LAY 2 LAY 3 LAY 4 LAY 5 LAY 6 LAY 7 LAY 8 LAY 9 LAY10 TOP GND INI IN2 GND1 VCC IN3 IN4 GND2 BOTTOM Revision History A O R IG IN A L RE LEA SE fe . cCL V?, o . ^ •Pff' j L

LT1076CV

Contextual Info: r r u n w i _LT1074/LT1076 TECHNOLOGY Step-D own Switching R egulator FCRTUIKS • ■ ■ ■ ■ ■ ■ ■ ■ 5A On-Board Switch LT1074 Up to 200kHz Switching Frequency Greatly Improved Dynamic Behavior Available in Low Cost 5-Lead Packages

rectifier diode 1334

Abstract: DIODE 1334 LM 30HFU 8700-35
Contextual Info: Bulletin 12060 INTERNATIONAL RECTIFIER I«R 30HFU. SERIES SU P ER FAST R EC T IFIER DIODE 30 Amp 60ns Major ratings and characteristics Description and Features 30HFU Units 30 A Very low reverse reco very tim e ' f AVG Re d uce d switching losses S o ft re co very characteristics

4PDT relay

Abstract: MHY-12A-115VAC 12048vdc MHY-120-26 WHY-12D-6VDC type lf relay
Contextual Info: Ratings 4PDT 2 form C contacts, 10 amp (ft 29VDC 10 am p @ 115VAC Description Miniature 4PDT relay 10 ampere contact ratng 50g operational shock Temperature range: AC coil: - 55°C to + 85*C DC coil: - 6 5 'C to + 125*0 V^/eight: 4.2 ounces maximum Enclosure: Herm etically sealed

DS4244

Abstract: tca 770
Contextual Info: M ITEL DCR1008SF Phase Control Thyristor SEMICONDUCTOR DS4244 - 2.4 Supersedes July 1997 version, DS4244 - 2.3 KEY PARAMETERS V DRM _. 3600V 830A Jt AV 15000A TSM dVdt* 1000V/|iS dl/dt 200A/|iS APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies.

LD-7805

Abstract: LD7805A MC 7805 CK B0-BJ LCD DISPLAY MODULE sharp LQ LD7805-1 D639 P342 443-TV LD7805-13
Contextual Info: . PREPARED BY : DATE I SPEC I FILE SHARP APPROVED BY : NO. LD7805A ~0, ISSUE : Aug . 3.1995 DATE PAGE LIQUID CRYSTAL DISPLAY GROUP : 17 pages APPLICABLE GROUP SHARP CORPORATION Liquid Crystal Display Group SPECIFICATION DEVICE SPECIFICATION FOR TFT-LCD Module

DCR1275SD25

Contextual Info: M ITEL DCR1275SD Phase Control Thyristor S E M IC O N D U C T O R Supersedes Septem ber 1997 version, DS4551 - 3.2 DS4551 - 3.3 APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. ■ DC M otor C ontrol. March 1998 KEY PARAMETERS VDRM

DS4552-3

Abstract: DS4552
Contextual Info: M ITEL DCR1277SD Phase Control Thyristor SEMICONDUCTOR Supersedes Septem ber 1997 version, DS4552 - 3.2 DS4552 - 3.3 APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. ■ DC M otor C ontrol. March 1998 KEY PARAMETERS 3600V DRM 995A