10SEP09 Search Results

Contextual Info: AMP 1471-9 R EV 3 1 M A R 2 0 0 0 LOC DIST REVISIO N S D E S C R IP T IO N R EV .1 STEP INDEX PE R RE VISED PLASTIC E C R —0 5 —0 0 7 5 1 2 09SEP05 PER 10SEP09 OPTICAL E C 0 - 0 9 - 0 2 1 51 0 AVB AVB KK AEG LIBER D .1 CORE REERACTIVE INDEX: 1.49 TYP.

1293D

Abstract: micro switch 2tl1-3 2TL1-21 24524-23 2TL1-1 2TL1 series honeywell
Contextual Info: 4 FO-55112-C 3 2 1 REV HONEYWELL PART NUMBER SEE CHART 5 MILITARY STANDARD NUMBER .240 D .427 17 $#4 $ SEALED TO PREVENT ENTRANCE OF LIQUIDS OR DUST .68 CHANGED BY CHECK 29 0056412 SJK 10SEP09 CMH REDRAWN WITHOUT CHANGE IN PRO-E .076 #.008 WIDE KEYWAY 34 $#8 $

SJK 15

Abstract: 24659-26
Contextual Info: 4 FO-55112-C HONEYWELL PART NUMBER 3 2 1 REV .076 #.008 WIDE KEYWAY .42 MILITARY STANDARD NUMBER CATALOG LISTING 6 6 D 34 $#8 $ TOTAL TRAVEL 17 $#4 $ SEE LOCKING DETAILS FOR DESCRIPTION "A" LOCKING INSERT SHOWN 1.05 SEALED TO PREVENT ENTRANCE OF LIQUIDS OR DUST

4M7 multiturn

Abstract: Trimmer Cermet 15 turn
Contextual Info: T18 Vishay Sfernice 3/4" Rectangular Multi-Turn Cermet Trimmer FEATURES • 0.75 W at 70 °C • Wide ohmic range 10 Ω to 5 MΩ • Tests according to CECC 41 000 • Industrial Grade • Compliant to RoHS directive 2002/95/EC since date code 0501 DIMENSIONS in millimeters (inches) ± 0.5 mm (± 0.02)

Contextual Info: RSK 22N Vishay Sfernice Precision Wirebondable Single Value Chip Resistor FEATURES Actual Size The demand for high precision, high stability microchips for both military and industrial environments is increasing with the growth and sophistication of modern hybrid circuitry.

VISHAY Optoelectronics

Abstract: FVOV6870 MIL-HDBK-263
Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. LCV COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - ALL RIGHTS RESERVED. .0 00015 REVISIONS LOC DIST AD 00 P LTR DESCRIPTION L E C O —0 5 —0 0 6 3 2 5 L1 REV PER GOLD OVER .0 0 0 05 0 DATE

Contextual Info: RMK 22N Vishay Sfernice Wirebondable High Precision Single Value Chip Resistors FEATURES Actual Size The demand for high precision, high stability microchips for both military and industrial environments is increasing with the growth and sophistication of modern hybrid circuitry.

Contextual Info: TA 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Resistor material: Self-passivating Tantalum nitride • Silicon substrate for good power dissipation • Wirebondable • Compliant to RoHS directive 2002/95/EC

0R00 5 1206 smd resistor

Abstract: P2010 p0603
Contextual Info: P Vishay Sfernice High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.1 % under Pn/0.05 % under Pd • Low temperature coefficient down to 5 ppm/°C - 25 °C; + 85 °C • Very low noise < 35 dB and voltage coefficient

Contextual Info: RSK 22N Vishay Sfernice Precision Wirebondable Single Value Chip Resistor FEATURES Actual Size The demand for high precision, high stability microchips for both military and industrial environments is increasing with the growth and sophistication of modern hybrid circuitry.

"diode 8 A"

Abstract: HFA08SD60S IRFP250 a6024 9404-2 94042
Contextual Info: HFA08SD60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • • 2 D-PAK 1 N/C 3 Anode Ultrafast recovery time Ultrasoft recovery Very low IRRM Very low Qrr Guaranteed avalanche Specified at operating conditions

MS24658-23

Abstract: ITL12-1 MS24658-21 MS-24658-23 MS24658 MS-24658-21 MS24658-22 MS-24658-22 ITL18 MS-24658-30
Contextual Info: 4 FO-55112-C 3 2 1 REV HONEYWELL PART NUMBER MILITARY STANDARD NUMBER CATALOG LISTING 6 6 MS-24658-21 ITL1-1 MS-24658-22 .42 D 31 $#7 $ TOTAL TRAVEL .090 APPROX PULLOUT TO CHANGE POSITION 15 30' $ #3 3 $0' SEE LOCKING DETAILS FOR DESCRIPTION "A" LOCKING INSERT SHOWN

Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FOR ALL C O P Y R IG H T D BY TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S LOC RESERVED. 17.37 [.6 8 4] s R E V IS E D PER 0G 3B-0164-05 3/9/05 SS GS "sT R E V IS E D PER E C 0 - 0 9 - 0 2 18 2 6

HFA04SD60S

Abstract: IRFP250 HFA04SD60SPBF
Contextual Info: HFA04SD60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • • • 2 1 N/C D-PAK 3 Anode Ultrafast recovery time Ultrasoft recovery Very low IRRM Very low Qrr Guaranteed avalanche Specified at operating temperature

aj312

Abstract: elgiloy aeg tt
Contextual Info: R E L E A S E D FO R P U B LIC A T IO N o ? r ] A [ =4 6 ] [, o ? r ] A [ . 4 6 ] [, o ? r ] A . 5 5 [ . 0 7 4 ] A . 6 0 [ . 0 2 8 ] A [. 5 5 ] 0 0 2 4 1 A [ . 5 3 ] 0 0 2 4 1 - 1 2 9 .5 [ . 3 7 5 ] - 1 2 9 .5 [ .3 7 5 ] - 1 2 9 .5 [ . 3 7 5 ]

206966-7

Abstract: 206966-1
Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R A LL BY ^ C O C O P Y R IG H T E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L R E V IS IO N S RIGHTS R E S E R VE D . C O R P O R A T IO N . LTR D E S C R IP T IO N DATE REVISED

206512-6

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R A LL BY ^ C O C O P Y R IG H T E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L R E V IS IO N S RIGHTS R E S E R VE D . D C O R P O R A T IO N . LTR D E S C R IP T IO N REVISED /2 '

206518-2

Abstract: S2065 250-2-5
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FOR ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . 1 . 1 2 5 + .0 2 5 D 84 4 + .0 1 O TYP PERI PH ERAU S E A L B O N D E D IN P L A C E

NTHS-0805

Abstract: NTHS1206N02N1002JE NTHS0402 temperature data ntc lcd Sn90Pb10
Contextual Info: NTHS Vishay Dale NTC Thermistors, SMD Chip FEATURES • Extended resistance values available in standard sizes • Wraparound Ni barrier terminations with 100 % Sn or Sn90Pb10 • Allows design flexibility for use with hybrid circuitry • Available in bulk or tape and reel packaging