10TURNS Search Results

Contextual Info: 巻線形精密級ポテンショメータ WIRE-WOUND PRECISION POTENTIOMETERS T3540シリーズ •特徴 FEATURES ●３回転から10回転までのラインアップ ●ダイヤル取付け可能 ●Line-up includes products ranging from ３ to 10turns.

Contextual Info: 巻線形精密級ポテンショメータ WIRE-WOUND PRECISION POTENTIOMETERS T3540シリーズ •特徴 FEATURES ●３回転から10回転までのラインアップ ●ダイヤル取付け可能 ●Line-up includes products ranging from ３ to 10turns.

Contextual Info: 巻線形精密級ポテンショメータ WIRE-WOUND PRECISION POTENTIOMETERS T3540シリーズ •特徴 FEATURES ●３回転から10回転までのラインアップ ●ダイヤル取付け可能 ●Line-up includes products ranging from ３ to 10turns.

10Turns

Abstract: T3540S AC1000V1 5050K
Contextual Info: 巻線形精密級ポテンショメータ WIRE-WOUND PRECISION POTENTIOMETERS T3540シリーズ •特徴 FEATURES ●３回転から10回転までのラインアップ ●ダイヤル取付け可能 ●Line-up includes products ranging from ３ to 10turns.

RTD 1185

Abstract: OP196 OP296 OP496 501u 100A CURRENT SINGLE PHASE bridge rectifier
Contextual Info: Micropower RRIO Operational Amplifiers OP196/OP296/OP496 a FEATURES Rail-to-Rail Input and Output Swing Low Power: 60 ␮A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300 ␮V max High Open-Loop Gain: 500 V/mV

transistor d 1557

Abstract: RD06HHF1 transistor 45 f 123 mosfet HF amplifier MITSUBISHI RF POWER MOS FET RF POWER TRANSISTOR 30MHz RD06HHF hf power transistor mosfet j4 92
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.

rtd temperature instrumentation amplifier

Abstract: rtd temperature instrumentation amplifier circuit 5V power supply using bridge rectifier rtd temperature sensor amplifier rtd circuit of output 5v circuit SY 356 HALF WAVE RECTIFIER CIRCUITS SY 170 PN junction diode data sheet in mil grade 3 phase AC voltage regulator
Contextual Info: a Micropower, Rail-to-Rail Input and Output Operational Amplifiers OP196/OP296/OP496 FEATURES Rail-to-Rail Input and Output Swing Low Power: 60 ␮A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: +3 V to +12 V Low Offset Voltage: 300 ␮V max

0P295

Abstract: OP295 OP495 CURRENT LOOP transmit Kappa current transformer op295g Voltage to Current Converter dual 4-20mA circuit OP495A MAT03 op
Contextual Info: A N AL OG D E V I C E S ► INC b£E J> m OfilbflDD 0G3öb7b A N A LO G D E V IC E S Eb7 • ANA Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jxV

F627-8Q1

Abstract: F627-8-Q1 F-627-8-Q1 DVD120T F627 F6278-Q1
Contextual Info: II/A-<_V|’| H H I INC ÖS D T | S b 4 5 E 0 S 0Q0D4Ö2 4 DVD120T 1 V P o w e r F E T 175 MHz 120 W 80-120 V 10 dB Package Type T FEATURES • ■ ■ ■ ■ ■ ■ No Thermal Runaway Broadband Capability Class A, B, C, D, E Low Noise Figure High Dynamic Range

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

RD16HHF1 equivalent

Abstract: RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet RD16HHF1 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

3590S-491-103

Abstract: 23n50 13N50
Contextual Info: BLF6G15L-40BRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

RTD 1185

Abstract: OP196 OP296 OP496 50Qn
Contextual Info: a Micropower, Rail-to-Rail Input and Output Operational Amplifiers OP196/OP296/OP496 FEATURES Rail-to-Rail Input and Output Swing Low Power: 60 ␮A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300 ␮V max

arco 406

Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

OP295G

Abstract: OP295 OP495 2n1711 spice model NPN transistor 2n2222 beta value 2N1711 spice 2N2907 PNP Transistor Vaf OP295GP OP295GS OP295GS-REEL
Contextual Info: Dual/Quad Rail-to-Rail Operational Amplifiers OP295/OP495 FEATURES Rail-to-Rail Output Swing Single-Supply Operation: 3 V to 36 V Low Offset Voltage: 300 mV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1,000 V/mV Unity-Gain Stable Low Supply Current/Per Amplifier: 150 ␮A max

TB-163

Abstract: SQ201 10NF 470PF UT34-50
Contextual Info: T B - 1 6 3 S Q 2 0 1 G a i n /E f f i c i e n c y v s F r e q u e n c y ; V d s = 2 8 V d c I d q = . 4 A 16 100 90 80 12 70 60 Gain 8 50 Pout fixed at 4W 40 Efficiency 30 4 20 10 50 100 150 200 250 300 350 400 450 500 550 Freq in MHz TB-163 SQ201 Pout vs Pin Freq=250MHz Vds=28Vdc Idq=400ma

C637

Abstract: 522-2422
Contextual Info: E T I Systems Allied Turns Counting Dials Visit ETIÕs Website at www.etisystems.com Combo¨ 3 Ñ 10-Turn Dial/Pot Combination Combination 10-Turn Dial/Pot Model DW22-10 Combo ¨ 3 . Reduce assembly costs by eliminating the time-consuming mounting and calibrating of dial to

op296hruz-reel

Abstract: 3183P
Contextual Info: Micropower RRIO Operational Amplifiers OP196/OP296/OP496 a FEATURES Rail-to-Rail Input and Output Swing Low Power: 60 ␮A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300 ␮V max High Open-Loop Gain: 500 V/mV

16HHF1

Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

MAR 618 transistor

Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

RD100HHF1

Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

RD16HHF1 application notes

Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

IC 30427

Abstract: IC 30427 M RD06HHF1 transistor d 1557 1518 B FET TRANSISTOR 30427 25.ID5 mosfet HF amplifier Pch MOS FET mosfet vgs 5v
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING 3.2+/-0.4 12.3MIN APPLICATION For output stage of high power amplifiers in HF band mobile radio sets.

a52 zener diode

Abstract: MAX5012 MAX5012AEPI MAX5012EVKIT BNC connector "reference plane" amplifier j3A
Contextual Info: 19-1286; Rev 0; 6/97 MAX5012 Evaluation Kit • • • • • Power Supplies and Grounding Reference Circuits Latch and Conversion Clocks Digital Input and Controls Analog Output _Applications _Features ♦ Up to 100Msps Conversion Rate