10V SCHOTTKY DIODE Search Results

TS16949

Abstract: ZLLS410 ZLLS410TA
Contextual Info: ZLLS410 10V Low leakage Schottky diode in SOD323 Summary VR > 10V; IF = 570mA; IR typ. 2µA Description This compact SOD323 packaged 10 volt Schottky diode offers users an excellent performance combination, comprising high current operation, extremely low leakage and low forward voltage ensuring suitability for

Contextual Info: ZLLS410 10V LOW LEAKAGE SCHOTTKY DIODE IN SOD323 Product Summary Features and Benefits • • • • • • • • • • VR > 10V IF = 750mA IR = 1µA Description and Applications This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation,

SOD323 diode schottky code marking 37

Abstract: ZLLS410 zlls410 diode data
Contextual Info: ZLLS410 10V LOW LEAKAGE SCHOTTKY DIODE IN SOD323 Product Summary Features and Benefits • • • • • • • • • • VR > 10V IF = 750mA IR = 1µA Description and Applications This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation,

AO3700

Contextual Info: AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.3A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A

AO3700

Contextual Info: AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.3A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A

AO6706L

Abstract: AO6706
Contextual Info: AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A

AO6706

Abstract: AO6706L D33A Sony D33A
Contextual Info: AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A

D69A

Abstract: AO4700L AO4700
Contextual Info: AO4700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) The AO4700 uses advanced trench technology to provide

AO4709

Abstract: Schottky Diode 20V 5A AO4709L
Contextual Info: AO4709 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V) The AO4709 uses advanced trench technology to provide

Schottky Diode 50V 3A

Abstract: AO3701L AO3701
Contextual Info: AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = -20V ID = -3A (VGS = -10V) RDS(ON) < 80mΩ (VGS = -10V) RDS(ON) < 100mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) ESD Rating: 2000V HBM

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14902AA-N •General description ■Features ELM14902AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14904AA-N •General description ■Features ELM14904AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)

Contextual Info: Single P-channel MOSFET with schottky diode ELM16701EA-S •General description ■Features ELM16701EA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-2.3A (Vgs=-10V) Rds(on) < 135mΩ (Vgs=-10V)

Contextual Info: Single P-channel MOSFET with schottky diode ELM18701BA-S •General description ■Features ELM18701BA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-4.2A (Vgs=-10V) Rds(on) < 50mΩ (Vgs=-10V)

Contextual Info: Complementary MOSFET with schottky diode ELM14610AA-N •General description ■Features ELM14610AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Vds=-30V Id=8.5A(Vgs=10V) Id=-7.1A(Vgs=-10V)

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14900AA-N •General description ■Features ELM14900AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)

pd1503yvs

Abstract: pd1503
Contextual Info: Dual N-channel MOSFET with schottky diode ELM341503A-N •General description ■Features ELM341503A-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. Q2 • Vds=30V • Id=9A(Vgs=10V) • Rds(on)<15.8mΩ(Vgs=10V)

ZLLS410

Abstract: ZLLS410TA
Contextual Info: A Product Line of Diodes Incorporated ZLLS410 10V LOW LEAKAGE SCHOTTKY DIODE IN SOD323 Features Mechanical Data • • • • • • • • • • • • • • • • VR > 10V IF = 750mA IR typ = 1µA Extremely low leakage High current capability

Contextual Info: DMS2085LSD P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits MOSFET RDS on max 85mΩ @ VGS = -10V 125mΩ @ VGS = -4.5V SCHOTTKY DIODE VF max 400mV @ IF = 0.5A 470mV @ IF = 1.0A

AO4902

Abstract: AO4902L
Contextual Info: AO4902 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Features General Description VDS V = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) The AO4902 uses advanced trench technology to provide

116a

Contextual Info: AO4722 30V N-Channel MOSFET 1234566576 General Description Product Summary TM VDS V = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 22mΩ (VGS = 4.5V) SRFET The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and

Contextual Info: Single N-channel MOSFET with schottky diode ELM14700AA-N •General description ■Features ELM14700AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)

Contextual Info: AO4722 30V N-Channel MOSFET SRFET General Description TM Product Summary TM VDS V = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 22mΩ (VGS = 4.5V) SRFET The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and

Contextual Info: Dual N-channel MOSFET with schottky diode ELM14906AA-N •General description ■Features ELM14906AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=7A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)