TS16949
Abstract: ZLLS410 ZLLS410TA
Text: ZLLS410 10V Low leakage Schottky diode in SOD323 Summary VR > 10V; IF = 570mA; IR typ. 2µA Description This compact SOD323 packaged 10 volt Schottky diode offers users an excellent performance combination, comprising high current operation, extremely low leakage and low forward voltage ensuring suitability for
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ZLLS410
OD323
570mA;
OD323
D-81541
TS16949
ZLLS410
ZLLS410TA
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Untitled
Abstract: No abstract text available
Text: ZLLS410 10V LOW LEAKAGE SCHOTTKY DIODE IN SOD323 Product Summary Features and Benefits • • • • • • • • • • VR > 10V IF = 750mA IR = 1µA Description and Applications This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation,
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ZLLS410
OD323
750mA
OD323
DS32080
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SOD323 diode schottky code marking 37
Abstract: ZLLS410 zlls410 diode data
Text: ZLLS410 10V LOW LEAKAGE SCHOTTKY DIODE IN SOD323 Product Summary Features and Benefits • • • • • • • • • • VR > 10V IF = 750mA IR = 1µA Description and Applications This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation,
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ZLLS410
OD323
750mA
OD323
DS32080
SOD323 diode schottky code marking 37
ZLLS410
zlls410 diode data
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AO3700
Abstract: No abstract text available
Text: AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.3A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A
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AO3700
AO3700
AO3700L
OT-23-5
0E-03
0E-04
0E-05
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AO3700
Abstract: No abstract text available
Text: AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.3A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A
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AO3700
AO3700
AO3700L
OT-23-5
0E-03
0E-04
0E-05
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AO6706L
Abstract: AO6706
Text: AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A
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AO6706
AO6706
AO6706L
0E-03
0E-04
0E-05
0E-06
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AO6706
Abstract: AO6706L D33A Sony D33A
Text: AO6706 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.6A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A
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AO6706
AO6706
AO6706L
D33A
Sony D33A
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D69A
Abstract: AO4700L AO4700
Text: AO4700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) The AO4700 uses advanced trench technology to provide
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AO4700
AO4700
AO4700L
0E-02
0E-03
0E-04
0E-05
D69A
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AO4709
Abstract: Schottky Diode 20V 5A AO4709L
Text: AO4709 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V) The AO4709 uses advanced trench technology to provide
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AO4709
AO4709
AO4709L
Schottky Diode 20V 5A
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Schottky Diode 50V 3A
Abstract: AO3701L AO3701
Text: AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = -20V ID = -3A (VGS = -10V) RDS(ON) < 80mΩ (VGS = -10V) RDS(ON) < 100mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) ESD Rating: 2000V HBM
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AO3701
AO3701
AO3701L
0E-03
0E-04
0E-05
0E-06
Schottky Diode 50V 3A
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14902AA-N •General description ■Features ELM14902AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)
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ELM14902AA-N
ELM14902AA-N
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14904AA-N •General description ■Features ELM14904AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)
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ELM14904AA-N
ELM14904AA-N
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Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET with schottky diode ELM16701EA-S •General description ■Features ELM16701EA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-2.3A (Vgs=-10V) Rds(on) < 135mΩ (Vgs=-10V)
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ELM16701EA-S
ELM16701EA-S
0E-03
0E-04
0E-05
0E-06
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Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET with schottky diode ELM18701BA-S •General description ■Features ELM18701BA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=-30V Id=-4.2A (Vgs=-10V) Rds(on) < 50mΩ (Vgs=-10V)
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ELM18701BA-S
ELM18701BA-S
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET with schottky diode ELM14610AA-N •General description ■Features ELM14610AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Vds=-30V Id=8.5A(Vgs=10V) Id=-7.1A(Vgs=-10V)
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ELM14610AA-N
ELM14610AA-N
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14900AA-N •General description ■Features ELM14900AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V)
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ELM14900AA-N
ELM14900AA-N
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pd1503yvs
Abstract: pd1503
Text: Dual N-channel MOSFET with schottky diode ELM341503A-N •General description ■Features ELM341503A-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. Q2 • Vds=30V • Id=9A(Vgs=10V) • Rds(on)<15.8mΩ(Vgs=10V)
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ELM341503A-N
ELM341503A-N
PD1503YVS
00E-01
00E-02
Oct-28-2009
pd1503yvs
pd1503
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ZLLS410
Abstract: ZLLS410TA
Text: A Product Line of Diodes Incorporated ZLLS410 10V LOW LEAKAGE SCHOTTKY DIODE IN SOD323 Features Mechanical Data • • • • • • • • • • • • • • • • VR > 10V IF = 750mA IR typ = 1µA Extremely low leakage High current capability
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ZLLS410
OD323
750mA
OD323
J-STD-020
DS32080
ZLLS410
ZLLS410TA
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Untitled
Abstract: No abstract text available
Text: DMS2085LSD P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits MOSFET RDS on max 85mΩ @ VGS = -10V 125mΩ @ VGS = -4.5V SCHOTTKY DIODE VF max 400mV @ IF = 0.5A 470mV @ IF = 1.0A
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DMS2085LSD
400mV
470mV
AEC-Q101
DS36926
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AO4902
Abstract: AO4902L
Text: AO4902 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Features General Description VDS V = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) The AO4902 uses advanced trench technology to provide
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AO4902
AO4902
AO4902L
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116a
Abstract: No abstract text available
Text: AO4722 30V N-Channel MOSFET 1234566576 General Description Product Summary TM VDS V = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 22mΩ (VGS = 4.5V) SRFET The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and
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AO4722
AO4722
Figure10:
116a
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET with schottky diode ELM14700AA-N •General description ■Features ELM14700AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)
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ELM14700AA-N
ELM14700AA-N
0E-04
0E-05
0E-06
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Untitled
Abstract: No abstract text available
Text: AO4722 30V N-Channel MOSFET SRFET General Description TM Product Summary TM VDS V = 30V ID =11.6A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 22mΩ (VGS = 4.5V) SRFET The AO4722 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and
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AO4722
AO4722
Figure10:
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET with schottky diode ELM14906AA-N •General description ■Features ELM14906AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • Vds=30V Id=7A (Vgs=10V) Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)
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ELM14906AA-N
ELM14906AA-N
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