D69A
Abstract: AO4700L AO4700
Text: AO4700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) The AO4700 uses advanced trench technology to provide
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AO4700
AO4700
AO4700L
0E-02
0E-03
0E-04
0E-05
D69A
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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AO4403
Abstract: 4801 soic8 AO4400
Text: December 2001 AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AO4403
AO4403
AO4400
AO4401
AO4800
AO4801
AO4700
AO4701
4801 soic8
AO4400
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AO4401
Abstract: ao4800
Text: July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AO4401
AO4401
AO4400
AO4800
AO4801
AO4700
AO4701
ao4800
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AO4402
Abstract: AO4800 mpf201 AO4400 AO4401
Text: March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AO4402
AO4402
AO4400
AO4401
AO4800
AO4801
AO4700
AO4701
AO4800
mpf201
AO4400
AO4401
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET with schottky diode ELM14700AA-N •General description ■Features ELM14700AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)
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ELM14700AA-N
ELM14700AA-N
0E-04
0E-05
0E-06
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AO4400
Abstract: AO4401 AO4800
Text: July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in
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AO4800
AO4800
AO4400
AO4401
AO4801
AO4700
AO4701
AO4400
AO4401
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