AO4700 Search Results

AO4700 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AO4700		Alpha & Omega Semiconductor	N-channel Enhancement Mode Field Effect Transistor With Schottky Diode	Original	PDF	123.25KB	5
AO4700L		Alpha & Omega Semiconductor	N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode	Original	PDF	123.25KB	5

AO4700 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D69A Abstract: AO4700L AO4700 Contextual Info: AO4700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) The AO4700 uses advanced trench technology to provide	Original	AO4700 AO4700 AO4700L 0E-02 0E-03 0E-04 0E-05 D69A	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
AO4403 Abstract: 4801 soic8 AO4400 Contextual Info: December 2001 AO4403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4403 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO4403 AO4403 AO4400 AO4401 AO4800 AO4801 AO4700 AO4701 4801 soic8 AO4400	PDF
AO4401 Abstract: ao4800 Contextual Info: July 2001 AO4401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO4401 AO4401 AO4400 AO4800 AO4801 AO4700 AO4701 ao4800	PDF
AO4402 Abstract: AO4800 mpf201 AO4400 AO4401 Contextual Info: March 2002 AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	AO4402 AO4402 AO4400 AO4401 AO4800 AO4801 AO4700 AO4701 AO4800 mpf201 AO4400 AO4401	PDF
Contextual Info: Single N-channel MOSFET with schottky diode ELM14700AA-N •General description ■Features ELM14700AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)	Original	ELM14700AA-N ELM14700AA-N 0E-04 0E-05 0E-06	PDF
AO4400 Abstract: AO4401 AO4800 Contextual Info: July 2001 AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in	Original	AO4800 AO4800 AO4400 AO4401 AO4801 AO4700 AO4701 AO4400 AO4401	PDF