10V SMD Search Results

A5E capacitor

Contextual Info: CS8311 Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE Features Description The CS8311 is a precision 10V micropower voltage regulator with very low quiescent current 100|iA typ at IOOji A load . The 10V output is accurate within ±2% and supplies

Contextual Info: CS8311 CS8311 Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE Features Description The CS8311 is a precision 10V micropower voltage regulator with very low quiescent current 100µA typ. at 100µA load . The 10V output is accurate within ±4% and supplies

step down Voltage Regulator 230 volt to 150 volt

Contextual Info: CS8311 CS8311 Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE Features Description The CS8311 is a precision 10V micropower voltage regulator with very low quiescent current 100µA typ. at 100µA load . The 10V output is accurate within ±4% and supplies

COBRA5272

Abstract: sentec HALO TG110-S050N2 TG110-S050N2 smd diode a9 sub-d9F LM2596 SMD DIODE A13 BLM41PG600SN1L TG110S050N2
Contextual Info: 5 4 3 2 1 D D +3.3V Switcher L2 U4 100nF SMD0805 + + C4 Power D14 LED Low Current + 220µF/10V SMD 1812 R1 1k C3 LM2596-3.3/TO263 Ringkern 35µH 220µF/10V SMD 1812 FB ON/OFF 2 220µF/10V SMD 1812 100nF SMD0805 4 5 OUT D13 B + VIN C12 C1 CON 1 C2 1000µF/35V radial

Contextual Info: IC IC MOSFET SMD Type Product specification KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

ja smd

Abstract: IC MOSFET QG smd diode fr
Contextual Info: IC IC SMD Type N-Channel UltraFET Trench MOSFET KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

Contextual Info: Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE D escription The CS8311 is a precision 10V m icropow er voltage regulator w ith very low quiescent current 100//A typ. at 100/iA load . The 10V o u tp u t is accurate w ith in +4% an d supplies

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7460 Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Continuous Drain Current, VGS @ 10V,Ta = 25 ID 12 Continuous Drain Current, VGS @ 10V,TA = 70 ID 10 Pulsed Drain Current*1 IDM 100 Power Dissipation Ta = 25

KRF7805Z

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7805Z Features Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V,TA = 25 Parameter ID 16 Continuous Drain Current, VGS @ 10V,TA = 70 ID 12 Pulsed Drain Current*1 Unit A IDM 120 Power Dissipation Ta = 25

smd diode 44a

Abstract: isd 1710 smd 44A FDB3672 KDB3672 PF247
Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3672 FDB3672 TO-263 Features (Typ.), VGS = 10V, ID =44A +0.1 1.27-0.1 rDS(ON) =24m Qg(tot) = 24nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2

Contextual Info: SMD Type Product specification KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

Contextual Info: SMD Type Product specification KDB3652 FDB3652 TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

Contextual Info: SMD Type Product specification KDB2572 FDB2572 Features TO-263 Unit: mm (Typ.), VGS = 10V, ID = 9A +0.1 1.27-0.1 rDS(ON) = 45m Qg(tot) = 26nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 Low Miller Charge 5.60 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1

Contextual Info: SMD Type Product specification KDB3682 FDB3682 TO-263 Features (Typ.), VGS = 10V, ID =32A +0.1 1.27-0.1 rDS(ON) =32m Qg(tot) = 18.5nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

31A36

Abstract: KRF7494 IC 31A
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7494 Features High frequency DC-DC converters Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating ID 5.2 Continuous Drain Current, VGS @ 10V,TA = 100 ID 3.7 Pulsed Drain Current*1 IDM 42 PD 3 Continuous Drain Current, VGS @ 10V,Ta = 25

FDB2552

Abstract: KDB2552
Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB2552 FDB2552 Features Unit: mm (Typ.), VGS = 10V, ID = 16A +0.1 1.27-0.1 rDS(ON) = 32m TO-263 Qg(tot) = 39nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2

kds9

Abstract: TRANSISTOR SMD 13W SMD 13W Transistor Mosfet N-Ch 30V KDS9952A 1c smd transistor SMD Transistor nc Dual N & P-Channel MOSFET
Contextual Info: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS9952A Features N-Channel 3.7A, 30V, RDS ON =0.08W @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used

equivalent smd mosfet

Abstract: FDB3682 KDB3682
Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3682 FDB3682 TO-263 Features (Typ.), VGS = 10V, ID =32A +0.1 1.27-0.1 rDS(ON) =32m Qg(tot) = 18.5nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

FDB3632

Abstract: KDB3632 84NC mosfet smd
Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

elna 100uF

Abstract: RVJ-50V101MH10-R elna 100uF 16v elna 100uf 10v RVJ-35V101MH10-R RVJ-35V221MH10-R elna 50v, 100uF ELNA 25v 47uf RVJ-10V221MG10-R RVJ-10V471MH10-R
Contextual Info: 2002-01-15 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 67-315-25 Ellytkond SMD 330uF/6V 67-316-16 Ellytkond SMD 100uF/10V 67-316-24 Ellytkond SMD 220uF/10V 67-317-49 Ellytkond SMD 470uF/16V

Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3652 FDB3652 TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

smd transistor g1

Abstract: g1 smd transistor smd transistor S1 mosfet vgs 5v smd diode S2 g1 smd diode MOSFET TSSOP-8 dual n-channel smd transistor 7a G1 C smd MOSFET TSSOP-8
Contextual Info: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KO8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)

Contextual Info: SMD Type Product specification KDB2552 FDB2552 Features Unit: mm (Typ.), VGS = 10V, ID = 16A +0.1 1.27-0.1 rDS(ON) = 32m TO-263 Qg(tot) = 39nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)

Contextual Info: MOSFET SMD Type N-Channel MOSFET KX7N10L SOT-223 ● V DS V = 100V Unit: mm +0.2 3.50-0.2 +0.2 -0.2 0.1max +0.05 0.90-0.05 6.50 ● ID = 1.7 A (V GS = 10V) ● RDS(ON) ＜ 350mΩ (VG S = 10V), ID=0.85A +0.1 3.00-0.1 +0.15 1.65-0.15 • Features +0.2 0.90-0.2