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Rochester Electronics LLC ESD5384NCTBG TVS DIODE 3VWM 9WLCSP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ESD5384NCTBG	Bulk	423,996		1,462	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
onsemi ESD5384NCTBG TVS DIODE 3VWM 9WLCSP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ESD5384NCTBG	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	ESD5384NCTBG	Reel			5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	ESD5384NCTBG		423,996		1	1 - 10 - 100 $0.1974 1000 $0.1638 10000 $0.1461	Buy Now
Avnet Silica	ESD5384NCTBG			143 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	ESD5384NCTBG			143 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Vyrian	ESD5384NCTBG		402,298			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi ESD7484NCTAG TVS DIODE 3VWM 10WLCSP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ESD7484NCTAG	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	ESD7484NCTAG	Bulk			25	1 - 10 - 100 $0.347 1000 $0.329 10000 $0.295	Get Quote
Avnet Silica	ESD7484NCTAG			143 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	ESD7484NCTAG			143 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Eaton Corporation 10250T184NC2NX Industrial Panel Mount Indicators / Switch Indicators 480v TX Ind LGT Unit W/A GN Plastic Len
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	10250T184NC2NX					1 $263.06 10 $252.41 100 $245.46 1000 $245.46 10000 $245.46	Get Quote
Eaton Corporation 10250T184NC5N Industrial Panel Mount Indicators / Switch Indicators INDICATIING LIGHT W/ CLEAR PLASTIC LENS
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Mouser Electronics	10250T184NC5N					1 $268.61 10 $266.8 100 $261.17 1000 $261.17 10000 $261.17	Get Quote

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84NC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HFA15TB60 Abstract: PD233 ULTRA fast rectifier diode 15A 200V anode common ULTRA fast rectifier diode 30A 200V anode common HFA15TB60-1 IRFP250 IR HFA15TB60 Contextual Info: Bulletin PD -2.334 rev. B 01/02 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC	Original	HFA15TB60 HFA15TB60-1 HFA15TB60 O-220AC HFA15TB60, O-262 PD233 ULTRA fast rectifier diode 15A 200V anode common ULTRA fast rectifier diode 30A 200V anode common HFA15TB60-1 IRFP250 IR HFA15TB60	PDF
FDB3632 Abstract: FDP3632 FDI3632 tc144e Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel UltraFET Trench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs	Original	FDB3632 FDP3632 FDI3632 FDI3632 tc144e	PDF
HFA15TB60PBF Abstract: HFA15TB60 HFA06TB120 HFA15TB60-1 IRFP250 vishay transistor date code IR HFA15TB60 Contextual Info: PD-95738 HFA15TB60PbF HFA15TB60-1 Ultrafast, Soft Recovery Diode HEXFRED TM Features VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs	Original	PD-95738 HFA15TB60PbF HFA15TB60-1 HFA15TB60 12-Mar-07 HFA15TB60PBF HFA06TB120 HFA15TB60-1 IRFP250 vishay transistor date code IR HFA15TB60	PDF
TRANSISTOR SMD MARKING CODE DM Abstract: transistor smd code marking tm HFA15TB60S IRFP250 SMD-220 TRANSISTOR SMD MARKING CODE 2x N smd marking dt2 Contextual Info: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation	Original	PD-20615 HFA15TB60S HFA15TB60S characterist86) SMD-220 TRANSISTOR SMD MARKING CODE DM transistor smd code marking tm IRFP250 TRANSISTOR SMD MARKING CODE 2x N smd marking dt2	PDF
irfp250 Abstract: HFA06TB120 HFA15TB60 HFA15TB60-1 international rectifier Contextual Info: PD-95738 HFA15TB60PbF HFA15TB60-1 Ultrafast, Soft Recovery Diode HEXFRED TM Features VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs	Original	PD-95738 HFA15TB60PbF HFA15TB60-1 HFA15TB60 unsurpass120 HFA15TB60PbF, O-262) O-262 irfp250 HFA06TB120 HFA15TB60-1 international rectifier	PDF
Contextual Info: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation	Original	PD-20615 HFA15TB60S HFA15TB60S 08-Mar-07	PDF
Contextual Info: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free	Original	PD-96033 HFA15TB60SPbF HFA15TB60S HFA15T	PDF
FDB3632 Abstract: FDI3632 FDP3632 tc144e Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs	Original	FDB3632 FDP3632 FDI3632 FDI3632 tc144e	PDF
Contextual Info: PD -2.334 HFA15TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs	Original	HFA15TB60 HFA15TB60 O-220AC	PDF
IR HFA15TB60 Contextual Info: Bulletin PD -2.334 rev. C 11/03 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC	Original	HFA15TB60 HFA15TB60-1 12-Mar-07 IR HFA15TB60	PDF
Contextual Info: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free	Original	PD-96033 HFA15TB60SPbF HFA15TB60S 08-Mar-07	PDF
FDB3632 Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs	Original	FDB3632 FDP3632 FDI3632	PDF
Contextual Info: SMD Type Product specification KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)	Original	KDB3632 FDB3632) O-263	PDF
FDB3632_F085 Abstract: FDB3632-F085 FDB3632 Contextual Info: FDB3632_F085 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge	Original	FDB3632 O-263AB FDB3632_F085 FDB3632-F085	PDF

Contextual Info: Bulletin PD -2.334 rev. C 11/03 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC	Original	HFA15TB60 HFA15TB60-1 HFA15TB60 08-Mar-07	PDF
Contextual Info: PD-95738 HFA15TB60PbF HFA15TB60-1 Ultrafast, Soft Recovery Diode HEXFRED TM Features VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs	Original	PD-95738 HFA15TB60PbF HFA15TB60-1 HFA15TB60 08-Mar-07	PDF
HFA15TB60S Abstract: IRFP250 Contextual Info: PD-96033 HFA15TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features 2 VF = 1.7V Qrr * = 84nC 1 Benefits VR = 600V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free	Original	PD-96033 HFA15TB60SPbF HFA15TB60S 12-Mar-07 IRFP250	PDF
IR HFA15TB60 Abstract: HFA15TB60 HFA15TB60-1 IRFP250 Contextual Info: Bulletin PD -2.334 rev. C 11/03 HFA15TB60 HFA15TB60-1 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF = 1.7V Qrr * = 84nC	Original	HFA15TB60 HFA15TB60-1 HFA15TB60 O-220AC HFA15TB60, O-262 IR HFA15TB60 HFA15TB60-1 IRFP250	PDF
HFA15TB60S Abstract: IRFP250 SMD-220 MAR 618 transistor Contextual Info: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation	Original	PD-20615 HFA15TB60S HFA15TB60S 12-Mar-07 IRFP250 SMD-220 MAR 618 transistor	PDF
FDB3632 Contextual Info: FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • rDS ON = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs	Original	FDB3632 FDP3632 FDI3632 FDH3632 O-220AB O-263AB O-262AB O-24manner	PDF
HFA15TB60 Abstract: IRFP250 Contextual Info: PD -2.334 HFA15TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.7V Qrr * = 84nC di rec M/dt * = 188A/µs	Original	HFA15TB60 HFA15TB60 IRFP250	PDF
HFA15TB60 Abstract: IRFP250 Contextual Info: Bulletin PD -2.334 rev. A 11/00 HFA15TB60 HEXFRED Ultrafast, Soft Recovery Diode TM BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits VF = 1.7V Qrr * = 84nC	Original	HFA15TB60 HFA15TB60 IRFP250	PDF
FDB3632 Abstract: KDB3632 84NC mosfet smd Contextual Info: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)	Original	KDB3632 FDB3632) O-263 FDB3632 84NC mosfet smd	PDF
FDB3632 Abstract: FDH3632 FDI3632 FDP3632 Contextual Info: FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • rDS ON = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs	Original	FDB3632 FDP3632 FDI3632 FDH3632 O-220AB FDH3632	PDF

84NC Search Results

84NC Price and Stock

Rochester Electronics LLC ESD5384NCTBG

onsemi ESD5384NCTBG

onsemi ESD7484NCTAG

Eaton Corporation 10250T184NC2NX

Eaton Corporation 10250T184NC5N

84NC Datasheets Context Search

HFA15TB60

FDB3632

HFA15TB60PBF

TRANSISTOR SMD MARKING CODE DM

irfp250

FDB3632

IR HFA15TB60

FDB3632

FDB3632_F085

HFA15TB60S

IR HFA15TB60

HFA15TB60S

FDB3632

HFA15TB60

HFA15TB60

FDB3632

FDB3632