10VJ Search Results

L79K

Contextual Info: SANYO SEMICONDUCTOR 1EE D I T'HTOTb □□QBSDb t. CORP L79M00T Series T-^rg - I - r3 » -5 Cg2605A Features . Output Voltage M o n o lith ic L in e a r IC 3110 L79M05T:-5V L79M10T:-10V L79M24T:-24V to - 2 4 V 0 .5 A 3-Pin Voltage Regulator L79M06T:-6V L79M12T:-12V

Contextual Info: IRFZ24 Advanœ d Power MOSFET FEATURES B V DSS = 60 V ♦ Avalanche Rugged Technology ^ D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -220 ♦ 175°C Operating Temperature

ADSP-2187L

Contextual Info: ANALOG DEVICES FEATURES PERFORMANCE 19 ns Instruction Cycle Tim e @ 3.3 V olts, 52 MIPS Sustained Performance Single-Cycle Instruction Execution Single-Cycle Context Switch 3-Bus Architecture A llow s Dual Operand Fetches in Every Instruction Cycle M ultifunction Instructions

Contextual Info: TOSHIBA {DISCRETE/OPTO} Tí D eT I t D ^ S G 990 16850 9097250 TOSHIBA DISCRETE/OPTO ^/oihlha üDlbñSG 3 D 1-39-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSIT) INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: Honeywell HTMOS High Temperature Products A d v an ce Information HIGH TEMPERATURE juP COMPATIBLE 12-BIT A/D CONVERTER HT574 FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Includes On-Chip Clock, Reference, • Avionics

mosfet ir 250 n

Contextual Info: IRFZ24 Advanced Power MOSFET FEATURES B ^ dss - 60 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

IRZE

Contextual Info: IRFWZ24 Advanced Power MOSFET FEATURES BV DSS 60 V ♦ Rugged Gate Oxide Technology ^ D S o n - 0.07Q ♦ Lower Input Capacitance In = 17 A ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PA K ♦ 175°C Operating Temperature

Contextual Info: L6269 12V DISK DRIVE SPINDLE & VCM, POWER & CONTROL “COMBO” PRODUCT PREVIEW GENERAL • 12V +/-10% OPERATION. ■ REGISTER BASED ARCHITECTURE ■ MINIMUM EXTERNAL COMPONENTS ■ BICMOS + VERTICAL DMOS (1.5mm) VCM DRIVER ■ 1.5A DRIVE CAPABILITY ■ 0.9WTOTAL BRIDGE IMPEDANCE AT 25°C

Contextual Info: HA-5134/883 Semiconductor Precision Quad Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HA-5134/883 is a precision quad operational amplifier that

Contextual Info: L6254 12V DISK DRIVE SPINDLE & VCM, POWER & CONTROL “COMBO” PRODUCT PREVIEW GENERAL • 12V ±10% OPERATION. ■ REGISTER BASED ARCHITECTURE ■ MINIMUM EXTERNAL COMPONENTS ■ BICMOS + VERTICAL DMOS (1.5mm) VCM DRIVER ■ 1.5A DRIVE CAPABILITY ■ 0.9WTOTAL BRIDGE IMPEDANCE AT 25°C

Contextual Info: L6268 12V DISK DRIVE SPINDLE & VCM, POWER & CONTROL “COMBO” PRODUCT PREVIEW GENERAL • 12V +/-10% OPERATION. ■ REGISTER BASED ARCHITECTURE ■ MINIMUM EXTERNAL COMPONENTS ■ BICMOS + VERTICAL DMOS (1.5mm) VCM DRIVER ■ 1.5A DRIVE CAPABILITY ■ 0.9WTOTAL BRIDGE IMPEDANCE AT 25°C

TA8622N

Abstract: 1A12 47RA 390P DB1A12 db audio A1UB
Contextual Info: TOSHIBA TA8622N INItüKAltD UKLUI TOSHIBA BIPOLAR LINEAR INTEGRATED CIRUIT TECHN ICAL D ATA SILICON MONOLITHIC T E N T A T I VE oTV SOUND MPX DEMODULATOR FOR U.S.A. SYSTEM • Internal filter for SUB and SAP . SUB/SAP display . Space Wide •Volume, balance, bass, treble cotrol

Contextual Info: C il^ A V % i i^ H W V Corporation ▼ HS574A/SP674A SIGNAL PROCESSING EXCELLENCE 12-Bit Sampling A/D Converters Complete 12-bit A/D Converters with SampleHold, Reference, Clock and Trt-state Outputs Low Power Dissipation — 110mW Maximum 12-Bit Linearity Over Temperature

Contextual Info: SSP7N80A Advanced Power MOSFET FEATURES B V DSS - 800 V • Avalanche Rugged Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. Low RDS(ON) ^DS(on) = 1.8 a < h- Rugged Gate Oxide Technology

74HL33534D

Abstract: 74HL33534DB
Contextual Info: Philips Semiconductors Preliminary Specification Octal D-type flip-flop; positive edge-trigger; 3-state; inverting_ FEATURES • • • • • • • QUICK REFERENCE DATA GND = 0 V; T „ * = 25 °C; t, = t, = 2.0 ns Wide supply voltage range of

EEA-PAM-535-D-32

Abstract: vickers amplifier cards EEA-PAM-553-D-32 Vickers KCG-3 valve EEA-PAM-533-D-32 KHDG5 Vickers KCG-3 EEA-PAM-513-D-32 EEA-PAM 561 A 12 EEA-PAM-535-A-32
Contextual Info: Vickers Accessories Power Amplifiers with PID Modules EEA-PAM-5*-D-32 Series General Description The EEA-PAM-5*-D-32 Eurocards are power amplifiers with integrated PID modules. Each of these cards replaces two conventional electronic cards. Features and Benefits

E08LM

Abstract: LM 301A
Contextual Info: SGS-THOMSON L M 1 0 1 A - L M 2 0 1 A L M 3 0 1 A IM SINGLE OPERATIONAL AMPLIFIERS LM101A LM301A LM201A • ■ ■ ■ INPUT OFFSET VOLTAGE 0.2 mV INPUT BIAS CURRENT 25 nA INPUT OFFSET CURRENT 1.5 nA SLEW RATE AS INVERTING AMPLIFIER 10 V/|is 2 mV 70 nA 2 nA

1rf830

Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
Contextual Info: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*

C11371

Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Contextual Info: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub­ sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS L ID . KTC3198L SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION Package: TO-92 FEATURES * Excellent Hfe Linearity :Hfe 2 =100(Typ) atVce=6V, Ic= 150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mAH). 95(Typ).

Contextual Info: Sipepe SP674A Coiporat>on^ SIGNAL PROCESSING EXCELLENCE COMPLETE 12-BIT, 15/iSEC A /D CONVERTER WITH MP INTERFACE FEATURES *2 a i r s A m • Complete 12-bit A/D converter with samplehold, reference, clock, and three-state outputs ■ Low power dissipation: 150mW max

K184

Abstract: 2SK184
Contextual Info: 2SK184 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR 2 S K SILICON N CHANNEL JUNCTION TYPE 18 4 Unit in mm LOW NOISE AUDIO AM PLIFIER APPLICATIONS 4.2MAX. • High |Yfs| : |Yfs| = 15mS Typ. (VDS = 10V, VGS = 0) • High Breakdown Voltage : V q /d § = —50V •

lm 7402

Abstract: SP8676
Contextual Info: MWOOWWWWWvW»«'XWwy*l»"» l WÀ s* 'yX •"■5* -X-■*■ / Í X,^ ¿ Í w a v a ". Drop in 16-Bit upgrade for existing 12-Bit 674 Complete Monolithic 16-Bit A/D Converter with Sample-Hoid, Reference, Clock and Tri-state Outputs Full Nyquist Sampling at 66kHz Sample Rate

SIEMENS ILQ1

Contextual Info: SIEMENS ILD1/2/5 ILQ1/2/5 DUAL CHANNEL QUAD CHANNEL PHOTOTRANSISTOR OPTOCOUPLER FEATURES • C u rre n t T ransfer R atio a t lF=10 m A ILD/Q1, 20% Min. IL D /Q 2 ,100% Min. ILD/Q5, 50% Min. • H igh C o lle c to r-E m itte r V oltage ILD /Q 1: BV ce o =50 V